Works matching DE "COMPOUND semiconductors"

Results: 283

Two-Dimensional Porous Beryllium Trinitride Monolayer as Multifunctional Energetic Material.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 1004, doi. 10.3390/nano15131004

By:

Jiang, Jiaxin;
Hu, Qifan;
Wang, Weiyi;
Guo, Hongyan

Publication type:

Article

The Effect of the Substrate Doping on the Properties of Structure Ga2O3–ZnGeP2.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 22, n. 10, p. 1, doi. 10.1002/pssa.202400844

By:

Podzyvalov, Sergei;
Kalygina, Vera;
Yudin, Nikolay;
Slyunko, Elena;
Zinovev, Mikhail;
Kuznetsov, Vladimir;
Shaimerdenova, Leila;
Baalbaki, Houssain

Publication type:

Article

Anionic Isoelectronic Substitution Effects on Thermal Stability and Thermoelectric Performance of PbTe-PbSe Compounds.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6300, doi. 10.1007/s11664-025-12023-1

By:

Wang, Longqin;
Li, Gang;
Jiang, Yunshan;
Ma, Haiguo;
Deng, Shukang;
Deng, Shuping

Publication type:

Article

A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 7, p. 3863, doi. 10.1002/cta.4327

By:

Gong, Tingwei;
Cheng, Zhiqun;
Le, Chao;
Ni, Zhekan;
Xuan, Xuefei;
Zheng, Bangjie;
Wang, Junqiang

Publication type:

Article

Investigation of Physical Properties of Nanostructured Selenium-Based Compound Semiconductors.

Published in:

International Journal of Nanoscience, 2024, v. 23, n. 5, p. 1, doi. 10.1142/S0219581X2450008X

By:

Ahmad, Shabir;
Singh, Mandeep;
Zulfequar, M.

Publication type:

Article

ELECTRONEGATIVITY EFFECTS ON THE BANDGAP BOWING CHARACTERS IN COMPOUND-SEMICONDUCTOR TERNARY ALLOYS.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 6, p. 609, doi. 10.1142/S0219581X10007356

By:

TIT, NACIR;
AMRANE, NOUREDDINE;
RESHAK, ALI HUSSAIN

Publication type:

Article

GROWTH DYNAMICS OF II–VI COMPOUND SEMICONDUCTOR QUANTUM DOTS EMBEDDED IN BOROSILICATE GLASS MATRIX.

Published in:

International Journal of Nanoscience, 2008, v. 7, n. 2/3, p. 151, doi. 10.1142/S0219581X08005250

By:

VERMA, ABHISHEK;
PANDEY, P. K.;
KUMAR, J.;
NAGPAL, S.;
BHATNAGAR, P. K.;
MATHUR, P. C.

Publication type:

Article

The recent advances of research on p-type ZnO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y

By:

Dai, L. P.;
Deng, H.;
Mao, F. Y.;
Zang, J. D.

Publication type:

Article

Optical Measurement of the Stoichiometry of Thin-Film Compounds Synthetized From Multilayers: Example of Cu(In,Ga)Se2.

Published in:

Microscopy & Microanalysis, 2023, v. 29, n. 6, p. 1847, doi. 10.1093/micmic/ozad105

By:

Poeira, Ricardo G;
Siopa, Daniel;
Anacleto, Pedro;
Sadewasser, Sascha;
Dale, Phillip J

Publication type:

Article

High Precision Phase-Shifting Electron Holography with Multiple Biprisms for GaN Semiconductor Devices.

Published in:

Microscopy & Microanalysis, 2019, p. 1554, doi. 10.1017/S1431927618008255

By:

Yamamoto, Kazuo

Publication type:

Article

The Development Trends and Prospects of India's Semiconductor Industry.

Published in:

China International Studies, 2024, n. 108, p. 116

By:

Lou Chunhao

Publication type:

Article

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 1, p. 84, doi. 10.3390/electronics11010084

By:

Piacibello, Anna;
Camarchia, Vittorio

Publication type:

Article

GaAs-Based Serial-Input-Parallel-Output Interfaces for Microwave Core-Chips.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 23, p. 3029, doi. 10.3390/electronics10233029

By:

Ramella, Chiara;
Estebsari, Motahhareh;
Nasri, Abbas;
Pirola, Marco

Publication type:

Article

Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 15, p. 1784, doi. 10.3390/electronics10151784

By:

Ramella, Chiara;
Pirola, Marco;
Florian, Corrado;
Colantonio, Paolo

Publication type:

Article

Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers.

Published in:

NPG Asia Materials, 2022, v. 14, n. 1, p. 1, doi. 10.1038/s41427-022-00437-w

By:

Kang, Hee Seong;
Kang, Jung Hoon;
Lee, Sol;
Lee, Kihyun;
Koo, Do Hyoung;
Kim, Yong-Sung;
Hong, Young Joon;
Kim, Yong-Jin;
Kim, Kwanpyo;
Lee, Donghun;
Lee, Chul-Ho

Publication type:

Article

New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06024

By:

Zikrillayev, N. F.;
Isamov, S. B.;
Isakov, B. O.;
Wumaier, T.;
Li wen Liang;
Zhan, J. X.;
Xiayimulati, T.

Publication type:

Article

Chemical Deposition of Multilayer HgS Films.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06010

By:

Sozanskyi, M. A.;
Siryk, K. M.;
Shapoval, P. Yo.;
Huminilovych, R. R.;
Stadnik, V. E.;
Laruk, M. M.

Publication type:

Article

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 4, p. 1, doi. 10.21272/jnep.14(4).04027

By:

Mostefai, Abdelkrim

Publication type:

Article

First Principle Study and Optimal Doping for High Thermoelectric Performance of TaXSn Materials (X = Co, Ir and Rh).

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01011-1, doi. 10.21272/jnep.13(1).01011

By:

Khaldi, A.;
Benallou, Y.;
Zemouli, M.;
Amara, K.;
El Keurti, M.

Publication type:

Article

Chalcopyrite Al(Ga, Mn)As2 and AlGa(As, P) Quaternary Semiconductor: A First-principle Study.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 2, p. 1, doi. 10.21272/jnep.11(2).02006

By:

Byung-SubKang;
Kie-Moon Song

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202400418

By:

Kyhm, Kwangseuk;
Kim, Jong Su;
Jeon, Heonsu;
Cho, Yong‐Hoon

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202300223

By:

Xing, Grace;
Mi, Zetian;
Chowdhury, Srabanti

Publication type:

Article

Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52535-8

By:

Shin, Hongjoo;
Hong, Doosun;
Cho, Hyunjin;
Jang, Hanhwi;
Kim, Geon Yeong;
Song, Kyeong Min;
Choi, Min-Jae;
Kim, Donghun;
Jung, Yeon Sik

Publication type:

Article

Tailored TiO2 Protection Layer Enabled Efficient and Stable Microdome Structured p‐GaAs Photoelectrochemical Cathodes.

Published in:

Advanced Energy Materials, 2020, v. 10, n. 9, p. 1, doi. 10.1002/aenm.201902985

By:

Cao, Shiyao;
Kang, Zhuo;
Yu, Yanhao;
Du, Junli;
German, Lazarus;
Li, Jun;
Yan, Xiaoqin;
Wang, Xudong;
Zhang, Yue

Publication type:

Article

Band Edge Engineering of Oxide Photoanodes for Photoelectrochemical Water Splitting: Integration of Subsurface Dipoles with Atomic-Scale Control.

Published in:

Advanced Energy Materials, 2016, v. 6, n. 7, p. 1, doi. 10.1002/aenm.201502154

By:

Hikita, Yasuyuki;
Nishio, Kazunori;
Seitz, Linsey C.;
Chakthranont, Pongkarn;
Tachikawa, Takashi;
Jaramillo, Thomas F.;
Hwang, Harold Y.

Publication type:

Article

Nanostructural Formation of Pd-Co Bimetallic Complex on HOPG Surfaces: XPS and AFM Studies.

Published in:

Journal of Nanotechnology, 2009, p. 1, doi. 10.1155/2009/971423

By:

Arroyo-Ramírez, Lisandra;
Montano-Serrano, Rubenier;
Raptis, Raphael G.;
Cabrera, Carlos R.

Publication type:

Article

Effect of double-constrained potential on the ground-state binding energy of magnetopolaron in a quantum well.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2023, v. 37, n. 8, p. 1, doi. 10.1142/S0217979223500728

By:

Mei, Jing-Hong;
Zhang, Bin;
Xiao, Jing-Lin;
Sun, Yong;
Zhang, Wei;
Miao, Xiu-Juan;
Sarengaowa;
Ma, Xin-Jun

Publication type:

Article

Comparative study between exponential Boltzmann and Lambert Boltzmann distributions for heat capacity calculation.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 14, p. N.PAG, doi. 10.1142/S0217979219501406

By:

Belgacem, Chokri Hadj

Publication type:

Article

PRESENT AND FUTURE OF HIGH-SPEED COMPOUND SEMICONDUCTOR IC's.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 1, doi. 10.1142/S0129156403001508

By:

Otsuji, Taiichi

Publication type:

Article

RELIABILITY AND RADIATION HARDNESS OF COMPOUND SEMICONDUCTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 327, doi. 10.1142/S0129156403001636

By:

Kayali, Sammy A.;
Johnston, Allan H.

Publication type:

Article

Electron Drift Velocity of the Two-Dimensional Electron Gas in Compound Semiconductors.

Published in:

International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 103, doi. 10.1142/S0129156400000131

By:

Dmitriev, Alexander;
Kachorovski, Valentin;
S. Shur, Michael;
Stroscio, Michael

Publication type:

Article

Phase Equilibria in the Ag2S–Sb2S3–SnS2 System and the Novel Quaternary Chalcogenide Ag11Sb3SnS12.

Published in:

Journal of Phase Equilibria & Diffusion, 2024, v. 45, n. 3, p. 723, doi. 10.1007/s11669-024-01126-7

By:

Berezniuk, O. P.;
Kogut, Y. M.;
Gulay, L. D.;
Piskach, L. V.

Publication type:

Article

High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se): High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se): M. Haouam et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 389, doi. 10.1007/s11664-024-11510-1

By:

Haouam, Marwa;
Hamidani, Ali;
Rebah, Nor;
Zanat, Kamel

Publication type:

Article

Hopping Conductivity in p-Type CuIn3Te5: A Critical Revisit.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 12, p. 7880, doi. 10.1007/s11664-023-10717-y

By:

Kajikawa, Yasutomo

Publication type:

Article

Cubic Mixed Semiconductor BAs:N Compounds for Energy Harvesting and Photovoltaic Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 1, p. 258, doi. 10.1007/s11664-022-09981-1

By:

Hussain, Moaid K.;
Kahdum, Bashaer Jawad;
Paudel, Ramesh;
Syrotyuk, Stepan

Publication type:

Article

Open Sn Framework Structure Hosting Bi Guest atoms–Synthesis, Crystal and Electronic Structure of Na13Sn26Bi.

Published in:

Chemistry - A European Journal, 2025, v. 31, n. 5, p. 1, doi. 10.1002/chem.202403592

By:

Zeitz, S.;
Boyko, M.;
Ponou, S.;
Hlukhyy, V.;
Fässler, T. F.

Publication type:

Article

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications.

Published in:

Crystal Research & Technology, 2024, v. 59, n. 7, p. 1, doi. 10.1002/crat.202300347

By:

Ghosh, Kaustab;
Mani, V. N.

Publication type:

Article

Biaxial and Uniaxial Tensile Strains Effects on Electronic, Optical, and Thermoelectric Properties of ScBiTe3 Compound.

Published in:

Crystal Research & Technology, 2023, v. 58, n. 11, p. 1, doi. 10.1002/crat.202300069

By:

Benyoussef, Safae;
Jabar, Abderrahim;
Bahmad, Lahoucine

Publication type:

Article

Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method.

Published in:

Crystal Research & Technology, 2022, v. 57, n. 7, p. 1, doi. 10.1002/crat.202100247

By:

Zhang, Hongli;
Jin, Min;
Shen, Hui;
Xu, Jiayue

Publication type:

Article

MOVPE of Group‐III Heterostructures for Optoelectronic Applications.

Published in:

Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900027

By:

Scholz, Ferdinand

Publication type:

Article

辉光放电质谱（GD-MS）法测定高纯砷中 16 种杂质元素.

Published in:

Chinese Journal of Inorganic Analytical Chemistry / Zhongguo Wuji Fenxi Huaxue, 2025, v. 15, n. 4, p. 576, doi. 10.20236/j.CJIAC.2025.04.015

By:

邹琳;
栾海光;
王凌燕;
徐萌琳

Publication type:

Article

Shift of the Infrared Absorption and Emission Spectra of Transition Metal Ions in Solid Solutions of Semiconductor Compounds.

Published in:

Technical Physics Letters, 2021, v. 47, n. 8, p. 613, doi. 10.1134/S1063785021060249

By:

Naydenov, S. V.

Publication type:

Article

The Dependence of the Growth Rate and Structure of III–V Nanowires on the Adatom Collection Area on the Substrate Surface.

Published in:

Technical Physics Letters, 2021, v. 47, n. 6, p. 440, doi. 10.1134/S1063785021050060

By:

Dubrovskii, V. G.

Publication type:

Article

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00368-4

By:

Ji, Jongho;
Kwak, Hoe-Min;
Yu, Jimyeong;
Park, Sangwoo;
Park, Jeong-Hwan;
Kim, Hyunsoo;
Kim, Seokgi;
Kim, Sungkyu;
Lee, Dong-Seon;
Kum, Hyun S.

Publication type:

Article

Electrically induced insulator-to-metal transition in InP-based ion-gated transistor.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-81685-4

By:

Shimizu, Sunao;
Shioya, Hiroki;
Hatano, Takafumi;
Miwa, Kazumoto;
Oiwa, Akira;
Ono, Shimpei

Publication type:

Article

In–situ strain control in epitaxial silicon carbide compound semiconductor.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-80810-7

By:

Jazizadeh, Behzad;
Myronov, Maksym

Publication type:

Article

Synthesis and investigation of optical properties and enhancement photocatalytic activity of TiO2–SnO2 semiconductor for degradation of organic compounds.

Published in:

Scientific Reports, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41598-024-78755-y

By:

Sadik, Wagih;
M. El-Demerdash, Abdelghaffar;
Nashed, Adel William;
Mostafa, Amr Ahmed;
Lamie, Elsayed

Publication type:

Article

Photocatalytic Degradation of Eriochrome Black-T Using BaWO 4 /MoS 2 Composite.

Published in:

Catalysts (2073-4344), 2022, v. 12, n. 10, p. 1290, doi. 10.3390/catal12101290

By:

Hunge, Yuvaraj M.;
Yadav, Anuja A.;
Kang, Seok-Won

Publication type:

Article

Exploring New Nitrogen-Rich Compounds: Hybrid First-Principle Calculations and Machine-Learning Algorithms.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 3, p. 225, doi. 10.3390/cryst15030225

By:

Zhou, Hang;
Wu, Jie;
Yang, Jiangtao;
Fan, Qingyang

Publication type:

Article

Recent Developments in Transmission Electron Microscopy for Crystallographic Characterization of Strained Semiconductor Heterostructures.

Published in:

2025

By:

Gong, Tao;
Chen, Longqing;
Wang, Xiaoyi;
Qiu, Yang;
Liu, Huiyun;
Yang, Zixing;
Walther, Thomas

Publication type:

Literature Review