Works matching Transistors

Results: 5000

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401

By:

Mamatov, Islombek;
Özçelep, Yasin;
Kaçar, Firat

Publication type:

Article

A Transistor Based Fast Driving Circuit for Bipolar Step Motor Driving.

Published in:

Turkish Journal of Science & Technology, 2014, v. 9, n. 1, p. 63

By:

SALIHMUHSIN, M.;
BABA, S.;
YILMAZ, A. S.;
SEKKELI, M.;
DIZIBUYUK, A.

Publication type:

Article

电子纸用柔性薄膜晶体管的研究进展.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2022, v. 37, n. 8, p. 948, doi. 10.37188/CJLCD.2022-0102

By:

高执文;
许伟;
姚日晖;
魏小琴;
钟锦耀;
杨跃鑫;
符晓;
刘泰江;
宁洪龙;
彭俊彪

Publication type:

Article

A Comparative Study of Radiation Doses and Treatment Area Dependence in Thermoluminescence Dosimetry Systems and Metal Oxide Semiconductor Field Effect Transistors.

Published in:

Journal of Turgut Ozal Medical Center, 2015, v. 22, n. 1, p. 22, doi. 10.7247/jtomc.2014.1764

By:

Pepele, Eda Kaya;
Us, Songül Barlaz;
Yaray, Kadir;
Eroğlu, Celalettin;
Dirican, Bahar;
Soyuer, Serdar

Publication type:

Article

Nonideal Transistors: Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors (Adv. Funct. Mater. 20/2020).

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.202070129

By:

Yang, Tengzhou;
Wu, Qian;
Dai, Fuhua;
Huang, Kairong;
Xu, Huihua;
Liu, Chenning;
Chen, Changdong;
Hu, Sujuan;
Liang, Xiaoci;
Liu, Xuying;
Noh, Yong‐Young;
Liu, Chuan

Publication type:

Article

Microscale Organic Transistors: Fully Integrated Microscale Quasi‐2D Crystalline Molecular Field‐Effect Transistors (Adv. Funct. Mater. 36/2019).

Published in:

Advanced Functional Materials, 2019, v. 29, n. 36, p. N.PAG, doi. 10.1002/adfm.201970250

By:

Bandari, Vineeth Kumar;
Gu, Yue;
Shi, Subao;
Nan, Yang;
He, Keqiang;
Li, Yang;
Bandari, Nooshin;
Moradi, Somayeh;
Tian, Hongkun;
Zhu, Feng;
Geng, Yanhou;
Yan, Donghang;
Schmidt, Oliver G.

Publication type:

Article

Análisis, modelado y simulación del ruido flicker en transistores MOS.

Published in:

Acta Universitaria, 2013, v. 23, n. 5, p. 20, doi. 10.15174/au.2013.478

By:

Ibarra, F. Sandoval;
Hernández, Natanael Melchor;
Ortega Cisneros, Susana

Publication type:

Article

High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification.

Published in:

Micromachines, 2023, v. 14, n. 10, p. 1933, doi. 10.3390/mi14101933

By:

Chang, Jui-Fen;
Yu, Jia-Min

Publication type:

Article

Bor arsenit bazlı nano-transistörlerde elektrot genişliğinin enerji aralığı üzerindeki etkisinin incelenmesi, bir DFT çalışması.

Published in:

Nigde Omer Halisdemir University Journal of Engineering Sciences / Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, 2024, v. 13, n. 1, p. 60, doi. 10.28948/ngumuh.1310492

By:

Ertekin, Nilüfer

Publication type:

Article

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2134, doi. 10.3390/electronics9122134

By:

Yoon, Young Jun;
Lee, Jae Sang;
Kim, Dong-Seok;
Lee, Sang Ho;
Kang, In Man

Publication type:

Article

Surface-light-emitting transistors based on vertical-type metal-base organic transistors.

Published in:

Journal of the Society for Information Display, 2011, v. 19, n. 9, p. 602, doi. 10.1889/JSID19.9.602

By:

Nakayama, Ken-iehi;
Pu, Yong-Jin;
Kido, Junji

Publication type:

Article

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction.

Published in:

HOLOS, 2020, v. 1, p. 1, doi. 10.15628/holos.2020.8378

By:

SABAGHI, M.

Publication type:

Article

晶态 IGZO 薄膜晶体管的研究进展.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2023, v. 38, n. 8, p. 1031, doi. 10.37188/CJLCD.2023-0121

By:

姜柏齐;
刘斌;
刘贤文;
张硕;
翁乐;
史大为;
郭建;
苏顺康;
姚琪;
宁策;
袁广才;
王峰;
喻志农

Publication type:

Article

3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications.

Published in:

IETE Journal of Research, 2022, v. 68, n. 2, p. 1342, doi. 10.1080/03772063.2019.1649203

By:

Baidya, Achinta;
Lenka, Trupti R.;
Baishya, Srimanta

Publication type:

Article

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202212367

By:

Lim, Taebin;
Lee, Suhui;
Lee, Jiseob;
Choi, HyungJin;
Jung, Byunglib;
Baek, SeungHyub;
Jang, Jin

Publication type:

Article

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 48, p. 1, doi. 10.1002/adfm.202105506

By:

Ganesan, Paramaguru;
Tsao, Hoi Nok;
Gao, Peng

Publication type:

Article

Reconfigurable Multifunctional Ambipolar Polymer‐Blend Transistors with Improved Switching‐Off Capability.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202103369

By:

Wei, Peng;
Wang, Xudong;
Li, Xianglong;
Han, Songyu;
Qiao, Nan;
Zhang, Peng;
Deng, Yunfeng;
Zhang, Wei;
Bu, Laju;
Lu, Guanghao

Publication type:

Article

A Review of Vertical Organic Transistors.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201907113

By:

Kleemann, Hans;
Krechan, Kevin;
Fischer, Axel;
Leo, Karl

Publication type:

Article

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201904576

By:

Waldrip, Matthew;
Jurchescu, Oana D.;
Gundlach, David J.;
Bittle, Emily G.

Publication type:

Article

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201903889

By:

Yang, Tengzhou;
Wu, Qian;
Dai, Fuhua;
Huang, Kairong;
Xu, Huihua;
Liu, Chenning;
Chen, Changdong;
Hu, Sujuan;
Liang, Xiaoci;
Liu, Xuying;
Noh, Yong‐Young;
Liu, Chuan

Publication type:

Article

Roadmap to Gigahertz Organic Transistors.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201903812

By:

Zschieschang, Ute;
Borchert, James W.;
Giorgio, Michele;
Caironi, Mario;
Letzkus, Florian;
Burghartz, Joachim N.;
Waizmann, Ulrike;
Weis, Jürgen;
Ludwigs, Sabine;
Klauk, Hagen

Publication type:

Article

Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020).

Published in:

Advanced Functional Materials, 2020, v. 30, n. 18, p. 1, doi. 10.1002/adfm.202070116

By:

Jing, Xu;
Illarionov, Yury;
Yalon, Eilam;
Zhou, Peng;
Grasser, Tibor;
Shi, Yuanyuan;
Lanza, Mario

Publication type:

Article

Ferroelectric Field Effect Transistors: Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption (Adv. Funct. Mater. 1/2020).

Published in:

Advanced Functional Materials, 2020, v. 30, n. 1, p. N.PAG, doi. 10.1002/adfm.202070005

By:

Ren, Chuanlai;
Zhong, Gaokuo;
Xiao, Qun;
Tan, Congbing;
Feng, Ming;
Zhong, Xiangli;
An, Feng;
Wang, Jinbin;
Zi, Mengfei;
Tang, Mingkai;
Tang, Yong;
Jia, Tingting;
Li, Jiangyu

Publication type:

Article

Ambipolar Transistors: Recent Advances in Ambipolar Transistors for Functional Applications (Adv. Funct. Mater. 40/2019).

Published in:

Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201970279

By:

Ren, Yi;
Yang, Xiaoyang;
Zhou, Li;
Mao, Jing‐Yu;
Han, Su‐Ting;
Zhou, Ye

Publication type:

Article

Flexible Low‐Power Operative Organic Source‐Gated Transistors.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 27, p. N.PAG, doi. 10.1002/adfm.201900650

By:

Kim, Yonghee;
Lee, Eun Kwang;
Oh, Joon Hak

Publication type:

Article

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201083

By:

Fomin, Mykola;
Pasadas, Francisco.;
Marin, Enrique G.;
Medina‐Rull, Alberto;
Ruiz, Francisco. G.;
Godoy, Andrés.;
Zadorozhnyi, Ihor;
Beltramo, Guillermo;
Brings, Fabian;
Vitusevich, Svetlana;
Offenhaeusser, Andreas;
Kireev, Dmitry

Publication type:

Article

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201163

By:

Bestelink, Eva;
Teng, Hao‐Jing;
Zschieschang, Ute;
Klauk, Hagen;
Sporea, Radu A.

Publication type:

Article

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200643

By:

Sun, Chen;
Li, Chao;
Samanta, Subhranu;
Han, Kaizhen;
Zheng, Zijie;
Zhang, Jishen;
Kong, Qiwen;
Xu, Haiwen;
Zhou, Zuopu;
Chen, Yue;
Zhuo, Cheng;
Ni, Kai;
Yin, Xunzhao;
Gong, Xiao

Publication type:

Article

Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200463

By:

Fu, Yang Ming;
Li, Hu;
Huang, Long;
Wei, Tianye;
Hidayati, Faricha;
Song, Aimin

Publication type:

Article

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100829

By:

Dong, Jianguo;
Sheng, Zhe;
Yu, Rui;
Hu, Wennan;
Wang, Yue;
Sun, Haoran;
Zhang, David Wei;
Zhou, Peng;
Zhang, Zengxing

Publication type:

Article

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000423

By:

Lahr, Oliver;
Bar, Michael S.;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291

By:

Bi, Jiahe;
Zou, Xuming;
Lv, Yawei;
Li, Guoli;
Liu, Xingqiang;
Liu, Yuan;
Yu, Ting;
Yang, Zhenyu;
Liao, Lei

Publication type:

Article

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133

By:

Zhang, Ziwei;
Du, Chunhui;
Jiao, Haoxuan;
Zhang, Min

Publication type:

Article

Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901079

By:

Arthur, Joshua N.;
Chaudhry, Mujeeb Ullah;
Woodruff, Maria A.;
Pandey, Ajay K.;
Yambem, Soniya D.

Publication type:

Article

Printed Flexible Organic Transistors with Tunable Aspect Ratios.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901207

By:

Sadeghi, Mahsa;
Delparastan, Peyman;
Pierre, Adrien;
Arias, Ana Claudia

Publication type:

Article

A Bacterial Photosynthetic Enzymatic Unit Modulating Organic Transistors with Light.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900888

By:

Di Lauro, Michele;
Gatta, Simona;
Bortolotti, Carlo A.;
Beni, Valerio;
Parkula, Vitaliy;
Drakopoulou, Sofia;
Giordani, Martina;
Berto, Marcello;
Milano, Francesco;
Cramer, Tobias;
Murgia, Mauro;
Agostiano, Angela;
Farinola, Gianluca M.;
Trotta, Massimo;
Biscarini, Fabio

Publication type:

Article

Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900087

By:

Melville, Owen A.;
Grant, Trevor M.;
Mirka, Brendan;
Boileau, Nicholas T.;
Park, Jeongwon;
Lessard, Benoît H.

Publication type:

Article

Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938

By:

Ma, Jiyeon;
Cho, Hyung Jun;
Heo, Junseok;
Kim, Sunkook;
Yoo, Geonwook

Publication type:

Article

Low Leakage and High ION/IOFF Ratio in Partial Gated AlGaN/GaN Nanowire Field‐Effect Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200100

By:

Kumar, Akhil S.;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900208

By:

Liu, Xiaochi;
Yuan, Yahua;
Qu, Deshun;
Sun, Jian

Publication type:

Article

Time-Dependent Sensitivity Tunable pH Sensors Based on the Organic-Inorganic Hybrid Electric-Double-Layer Transistor.

Published in:

International Journal of Molecular Sciences, 2022, v. 23, n. 18, p. N.PAG, doi. 10.3390/ijms231810842

By:

Park, Ki-Woong;
Cho, Won-Ju

Publication type:

Article

One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 9, p. 605, doi. 10.1002/pssr.201307259

By:

Frenzel, Heiko;
Lajn, Alexander;
Grundmann, Marius

Publication type:

Article

Spin Transistors vs. Conventional Transistors: What Are the Benefits?

Published in:

Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 61, doi. 10.1007/s10948-009-0537-y

By:

Pelá, R. R.;
Teles, L. K.

Publication type:

Article

A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors.

Published in:

Microwave & Optical Technology Letters, 2008, v. 50, n. 2, p. 453, doi. 10.1002/mop.23130

By:

Olvera Cervantes, J. L.;
Medina Monroy, J. L.;
Chávez Pérez, R. A.;
Velázquez Ventura, A.

Publication type:

Article

Organic Field Effect Transistors: Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors (Adv. Mater. Interfaces 23/2020).

Published in:

Advanced Materials Interfaces, 2020, v. 7, n. 23, p. 1, doi. 10.1002/admi.202070131

By:

Lloret, Vicent;
Nuin, Edurne;
Kohring, Malte;
Wild, Stefan;
Löffler, Mario;
Neiss, Christian;
Krieger, Michael;
Hauke, Frank;
Görling, Andreas;
Weber, Heiko B.;
Abellán, Gonzalo;
Hirsch, Andreas

Publication type:

Article

Applications of Transistor-Based Biochemical Sensors.

Published in:

Biosensors (2079-6374), 2023, v. 13, n. 4, p. 469, doi. 10.3390/bios13040469

By:

Gao, Qiya;
Fu, Jie;
Li, Shuang;
Ming, Dong

Publication type:

Article

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 2, p. 503, doi. 10.1142/S012915640400248X

By:

Schrimpf, R. D.

Publication type:

Article

Relationship between crystalline structure of poly(3-hexylthiophene) blends and properties of organic thin-film transistors - a brief review.

Published in:

Polimery, 2016, v. 61, n. 6, p. 433, doi. 10.14314/polimery.2016.433

By:

Chlebosz, Dorota;
Janasz, Łukasz;
Pisula, Wojciech;
Kiersnowski, Adam

Publication type:

Article

A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2177, doi. 10.1007/s11664-022-10148-1

By:

Wu, Lijuan;
Zhang, Banghui;
Deng, Gaoqiang;
Song, Xuanting;
Liu, Heng;
Liu, Qing;
Qiu, Tao

Publication type:

Article

Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1323, doi. 10.1007/s11664-022-10095-x

By:

Lo, Yi-Chen;
Cheng, Xing

Publication type:

Article