Works matching IS 1000985X AND DT 2025 AND VI 54 AND IP 2

Results: 19

Growth of ∅210 mm Large-Size Eu3+:CaF2 Laser Crystal.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 358, doi. 10.16553/j.cnki.issn1000-985x.2025.2001

By:

ZHOU Lina;
LIU Jianqiang;
NIU Xiaowei

Publication type:

Article

Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 348, doi. 10.16553/j.cnki.issn1000-985x.2024.0179

By:

QU Minmin;
YU Jiangang;
LI Ziwei;
LI Wangwang;
LEI Cheng;
LI Tengteng;
LI Fengchao;
LIANG Ting;
JIA Renxu

Publication type:

Article

Performance Optimization Study of Ga2O3/NiOx Schottky Barrier Diodes.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 337, doi. 10.16553/j.cnki.issn1000-985x.2024.0294

By:

WANG Kaikai;
DU Song;
XU Hao;
LONG Hao

Publication type:

Article

α-Phase Gallium Oxide Films and Their Solar Blind Photodetectors Based on Pulsed Laser Deposition.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 329, doi. 10.16553/j.cnki.issn1000-985x.2024.0268

By:

DING Zijian;
YAN Shiqi;
XU Xifan;
XIN Qian

Publication type:

Article

Analysis of High Temperature Current Transport Mechanism of β-Ga2O3 Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 319, doi. 10.16553/j.cnki.issn1000-985x.2024.0263

By:

DU Tong;
FU Junjie;
WANG Zishi;
DI Jing;
TAO Chunlei;
ZHANG Hezhi;
ZHANG Qi;
HU Xibing;
LIANG Hongwei

Publication type:

Article

β-Ga2O3 Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 312, doi. 10.16553/j.cnki.issn1000-985x.2024.0284

By:

YU Xinxin;
SHEN Rui;
YU Han;
ZHANG Zhao;
SAI Qinglin;
CHEN Duanyang;
YANG Zhenni;
QIAO Bing;
ZHOU Likun;
LI Zhonghui;
DONG Xin;
ZHANG Hongliang;
QI Hong;
CHEN Tangsheng

Publication type:

Article

Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 290, doi. 10.16553/j.cnki.issn1000-985x.2024.0267

By:

XIE Yinfei;
HE Yang;
LIU Weiye;
XU Wenhui;
YOU Tiangui;
OU Xin;
GUO Huaixin;
SUN Huarui

Publication type:

Article

Research Progress of Gallium Oxide Avalanche Photodetectors.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 276, doi. 10.16553/j.cnki.issn1000-985x.2024.0264

By:

SHAO Shuangyao;
YANG Shuo;
FENG Huayu;
JIA Zhitai;
TAO Xutang

Publication type:

Article

Research Progress of Ultra-Wide Bandgap β-Ga2O3 Power Devices on Novel Structures and Electro-Thermal Characteristics.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 263, doi. 10.16553/j.cnki.issn1000-985x.2024.0265

By:

WEI Yuxi;
MA Xinyu;
JIANG Zejun;
WEI Jie;
LUO Xiaorong

Publication type:

Article

Growth of α-Ga2O3 on Different Plane of Sapphire Substrate by Mist-CVD Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 255, doi. 10.16553/j.cnki.issn1000-985x.2024.0273

By:

LI Xiongjie;
NING Pingfan;
CHEN Shiao;
QIAO Sibo;
CHENG Hongjuan;
WANG Yingmin;
NIU Pingjuan

Publication type:

Article

Electronic Transport Properties of Sn-Doped β-Ga2O3 (010) Thin Films Grown by MBE Homoepitaxial Growth.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 244, doi. 10.16553/j.cnki.issn1000-985x.2024.0279

By:

ZHANG Ziqi;
YANG Zhenni;
KUANG Siliang;
WEI Shenglong;
XU Wenjing;
CHEN Duanyang;
QI Hongji;
ZHANG Hongliang

Publication type:

Article

Mist CVD Grown High-Phase-Purity α-Ga2O3 and Its Photoresponse Performance.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 233, doi. 10.16553/j.cnki.issn1000-985x.2024.0260

By:

YAO Suhao;
ZHANG Maolin;
JI Xueqiang;
YANG Lili;
LI Shan;
GUO Yufeng;
TANG Weihua

Publication type:

Article

Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 227, doi. 10.16553/j.cnki.issn1000-985x.2024.0251

By:

DONG Zengyin;
WANG Yingmin;
ZHANG Song;
LI He;
SUN Kewei;
CHENG Hongjuan;
LIU Chao

Publication type:

Article

Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 219, doi. 10.16553/j.cnki.issn1000-985x.2024.0269

By:

LI Titao;
LU Yaoping;
CHEN Duanyang;
QI Hongji;
ZHANG Haizhong

Publication type:

Article

Growth and Spectral Properties of Bi-Doped β-Ga2O3 Single Crystal by Optical Floating Zone Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 202, doi. 10.16553/j.cnki.issn1000-985x.2024.0266

By:

YANG Xiaolong;
TANG Huili;
ZHANG Chaoyi;
SUN Peng;
HUANG Lin;
CHEN Long;
XU Jun;
LIU Bo

Publication type:

Article

Growth of 2-Inch Fe-Doped β-Ga2O3 Single Crystal with High Resistance and Properties of (010) Substrates.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 197, doi. 10.16553/j.cnki.issn1000-985x.20241120.001

By:

YAN Yuchao;
WANG Cheng;
LU Changcheng;
LIU Yingying;
XIA Ning;
JIN Zhu;
ZHANG Hui;
YANG Deren

Publication type:

Article

Research Progress on p-Type Conduction of p Phase Gallium Oxide.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 177, doi. 10.16553/j.cnki.issn1000-985x.2024.0285

By:

ZHA Xianhu;
WAN Yuxi;
ZHANG Daohua

Publication type:

Article

First-Principle Study of ε-Ga2O3 Crystal and Its Intrinsic Defects.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 212, doi. 10.16553/j.cnki.issn1000-985x.2024.0259

By:

GUO Manyi;
WU Jiaxing;
YANG Fan;
WANG Chao;
WANG Yanjie;
CHI Yaodan;
YANG Xiaotian

Publication type:

Article

Growth and Properties of β-Ga2O3 Single Crystal by Vertical Bridgman Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 190, doi. 10.16553/j.cnki.issnl000-985x.2024.0301

By:

HUANG Dongyang;
HUANG Haotian;
PAN Mingyan;
XU Ziqian;
JIA Ning;
QI Hongji

Publication type:

Article

Works matching IS 1000985X AND DT 2025 AND VI 54 AND IP 2

Growth of ∅210 mm Large-Size Eu<sup>3+</sup>:CaF<sub>2</sub> Laser Crystal.

Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode.

Performance Optimization Study of Ga<sub>2</sub>O<sub>3</sub>/NiO<sub>x</sub> Schottky Barrier Diodes.

α-Phase Gallium Oxide Films and Their Solar Blind Photodetectors Based on Pulsed Laser Deposition.

Analysis of High Temperature Current Transport Mechanism of β-Ga<sub>2</sub>O<sub>3</sub> Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector.

β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD.

Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices.

Research Progress of Gallium Oxide Avalanche Photodetectors.

Research Progress of Ultra-Wide Bandgap β-Ga<sub>2</sub>O<sub>3</sub> Power Devices on Novel Structures and Electro-Thermal Characteristics.

Growth of α-Ga<sub>2</sub>O<sub>3</sub> on Different Plane of Sapphire Substrate by Mist-CVD Method.

Electronic Transport Properties of Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> (010) Thin Films Grown by MBE Homoepitaxial Growth.

Mist CVD Grown High-Phase-Purity α-Ga<sub>2</sub>O<sub>3</sub> and Its Photoresponse Performance.

Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method.

Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth.

Growth and Spectral Properties of Bi-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal by Optical Floating Zone Method.

Growth of 2-Inch Fe-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal with High Resistance and Properties of (010) Substrates.

Research Progress on p-Type Conduction of p Phase Gallium Oxide.

First-Principle Study of ε-Ga<sub>2</sub>O<sub>3</sub> Crystal and Its Intrinsic Defects.

Growth and Properties of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal by Vertical Bridgman Method.