Works matching DE "METAL oxide semiconductor field-effect transistors"

Results: 2572

Design of High-Speed Motor System for EV Based on 1200 V SiC-MOSFET Power Module.

Published in:

Actuators, 2025, v. 14, n. 5, p. 216, doi. 10.3390/act14050216

By:

Zhou, Kun;
Gu, Minglei;
Zheng, Yu

Publication type:

Article

Chaos Anticontrol and Switching Frequency Impact on MOSFET Junction Temperature and Lifetime.

Published in:

Actuators, 2025, v. 14, n. 5, p. 203, doi. 10.3390/act14050203

By:

Morel, Cristina;
Morel, Jean-Yves

Publication type:

Article

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 508, doi. 10.3390/mi16050508

By:

Li, Mingyue;
Qiu, Zhaofeng;
Li, Tianci;
Kang, Yi;
Lu, Shan;
Hu, Xiarong

Publication type:

Article

Electric-field-guided 3D manipulation of liquid metal microfleas.

Published in:

Soft Materials, 2022, v. 20, n. 2, p. 129, doi. 10.1080/1539445X.2021.1926283

By:

Wang, Yongxin;
Kuai, Yanbing;
Zhang, Guangqiang;
Zhang, Hairui;
Cong, Jiawei;
Xu, Yunli;
Yi, Lizhi;
Liu, Min;
Liu, Yiman

Publication type:

Article

Low-power, high-performance SOI CMOS.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 63

By:

Pelloie, Jean-Lac;
Auberton-Herve, Andre

Publication type:

Article

Low-energy plasma-enhanced CVD facilities high mobility SiGe.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 30

By:

Demmin, Jeffrey C.

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Article

Gd oxide may bring better GaAs, more talk.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 28

By:

Burggraaf, Pieter

Publication type:

Article

Double-gate MOSFET demonstrates 25-nm thick channel.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. 24

By:

K.D.

Publication type:

Article

Noise Performance Evaluation of Recessed-Drain/Source Junctionless Gate-All-Around MOSFETs.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4798, doi. 10.1007/s11664-025-11928-1

By:

Kumar, Alok;
Gupta, Tarun Kumar;
Shrivastava, Bhavana P.;
Gupta, Abhinav

Publication type:

Article

A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4786, doi. 10.1007/s11664-025-11892-w

By:

Chen, Weizhong;
Deng, Zhijie;
Chen, Zesheng;
Zhou, Yangqi;
Han, Zhengsheng;
Wang, Zeheng

Publication type:

Article

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3480, doi. 10.1007/s11664-024-11548-1

By:

Chowdhury, Dibyendu;
DasMahapatra, Suddhendu;
De, Bishnu Prasad;
Maiti, Madhusudan;
Kar, Rajib;
Mandal, Durbadal;
Samanta, Jagannath

Publication type:

Article

Spacer Engineered Halo-Doped Nanowire MOSFET for Digital Applications.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 758, doi. 10.1007/s11664-024-11557-0

By:

Kumar, P. Kiran;
Balaji, B.;
Vardhan, Ch. Sree;
Gowthami, Y.;
Agarwal, Vipul;
Shashidhar, M.;
Sagar, Kallepelli;
Jena, Biswajit;
Pedapudi, Michael Cholines;
Manikanta, Kurivella

Publication type:

Article

Proposal and Analysis of a High Read and Write Noise Margin 6T-SRAM Cell Using Novel Core Insulator Double-Gate (CIDG) MOSFETs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8087, doi. 10.1007/s11664-024-11490-2

By:

Jaiswal, Sushmita;
Gupta, Santosh Kumar

Publication type:

Article

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4544, doi. 10.1007/s11664-024-11225-3

By:

Goyal, Priyanshi;
Kaur, Harsupreet

Publication type:

Article

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1

By:

Venkatesan, R. S.;
Manickam, Rajeswari;
Duraipandi, Brindha;
Sugathan, Krishnapriya Kottakkal

Publication type:

Article

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2601, doi. 10.1007/s11664-024-11014-y

By:

Fletcher, A. S. Augustine;
Franklin, S. Angen;
Murugapandiyan, P.;
Ajayan, J.;
Nirmal, D.

Publication type:

Article

5,7,12,14‐Tetrafunctionalized 6,13‐Diazapentacenes.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 4, p. 799, doi. 10.1002/chem.201904516

By:

Xie, Gaozhan;
Hauschild, Miriam;
Hoffmann, Hendrik;
Ahrens, Lukas;
Rominger, Frank;
Borkowski, Michal;
Marszalek, Tomasz;
Freudenberg, Jan;
Kivala, Milan;
Bunz, Uwe H. F.

Publication type:

Article

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z

By:

Radamson, Henry;
Kolahdouz, Mohammadreza

Publication type:

Article

Palladium diffusion in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2113, doi. 10.1007/s10854-014-2655-y

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 248, doi. 10.1007/s10854-007-9531-y

By:

Abdi, M. A.;
Djeffal, F.;
Arar, D.;
Hafiane, M. L.

Publication type:

Article

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x

By:

Hayama, K.;
Takakura, K.;
Ohyama, H.;
Rafí, J. M.;
Mercha, A.;
Simoen, E.;
Claeys, C.

Publication type:

Article

Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle.

Published in:

Continuum Mechanics & Thermodynamics, 2012, v. 24, n. 4-6, p. 417, doi. 10.1007/s00161-011-0217-6

By:

Camiola, Vito;
Mascali, Giovanni;
Romano, Vittorio

Publication type:

Article

Low Power Wideband Folded Cascade Based Transimpedance Amplifier Using Flipped Voltage Follower and Floating Gate MOSFET.

Published in:

Wireless Personal Communications, 2024, v. 137, n. 2, p. 893, doi. 10.1007/s11277-024-11403-w

By:

Singh, Preeti;
Gupta, Maneesha;
Aggarwal, Bhawna

Publication type:

Article

Experimental Study of Field-Effect Transistors in Charge-Discharge Mode of a Substrate Capacitor.

Published in:

Measurement Techniques, 2016, v. 59, n. 9, p. 979, doi. 10.1007/s11018-016-1079-x

By:

Akop'yan, V.;
Karapet'yan, G.

Publication type:

Article

A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors.

Published in:

Electronic Materials, 2024, v. 5, n. 4, p. 321, doi. 10.3390/electronicmat5040020

By:

Chiang, Te-Kuang

Publication type:

Article

A Prediction about Radio Frequency Envelope Detectors for Implementing a 2.4 GHz Rectenna for IEEE 802.15.4 with MOS Transistors.

Published in:

Chips, 2024, v. 3, n. 3, p. 229, doi. 10.3390/chips3030011

By:

Barboni, Leonardo

Publication type:

Article

The Performance Comparison of the SiC and Si Mosfets Used in the 3-Phase Brushless DC Motor Drives for Electric Vehicles.

Published in:

International Journal of Automotive Science & Technology, 2022, v. 6, n. 4, p. 331, doi. 10.30939/ijastech..1132500

By:

SEVİM, Erkan;
ÇETİN, Emrah

Publication type:

Article

Fading of pMOS dosimeters over a long period of time.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2022, v. 17, n. 7, p. 155, doi. 10.1049/mna2.12119

By:

Ristić, Goran S.;
Andjelković, Marko S.;
Duane, Russell;
Jakšić, Aleksandar B.

Publication type:

Article

AC-SJ VDMOS with ultra-low resistance.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 4, p. 230, doi. 10.1049/mnl.2019.0497

By:

Yandong Wang;
Baoxing Duan;
Chen Zhang;
Xiameng Wang;
Yintang Yang

Publication type:

Article

Effect of ITCs on gate stacked JL-TFET based on work-function engineering.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1238, doi. 10.1049/mnl.2019.0252

By:

Bhardwaj, Eshaan;
Nigam, Kaushal;
Choubey, Shubham;
Chaturvedi, Savitesh

Publication type:

Article

Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 10, p. 1092, doi. 10.1049/mnl.2019.0055

By:

Baoxing Duan;
Yunjia Huang;
Jingyu Xing;
Yintang Yang

Publication type:

Article

VLSI Structures for DNA Sequencing--A Survey.

Published in:

Bioengineering (Basel), 2020, v. 7, n. 2, p. 1, doi. 10.3390/bioengineering7020049

By:

Islam, Mohammad A.;
Datta, Palash K.;
Myler, Harley

Publication type:

Article

Growth of metal‐organic decomposed ternary GaxCeyOz films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 5, p. 5756, doi. 10.1002/er.7520

By:

Tan, Kar Yeow;
Quah, Hock Jin

Publication type:

Article

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 10, p. 14761, doi. 10.1002/er.6752

By:

Onik, Tahsin Ahmed Mozaffor;
Hawari, Huzein Fahmi;
Sabri, Mohd Faizul Mohd;
Wong, Yew Hoong

Publication type:

Article

Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201109

By:

Park, Jingyu;
Choi, Sungju;
Kim, Changwook;
Shin, Hong Jae;
Jeong, Yun Sik;
Bae, Jong Uk;
Oh, Chang Ho;
Oh, Saeroonter;
Kim, Dae Hwan

Publication type:

Article

Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200554

By:

Park, Seongmin;
Seong, Suwon;
Jeon, Gilsu;
Ji, Wonjae;
Noh, Kyungmi;
Kim, Seyoung;
Chung, Yoonyoung

Publication type:

Article

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201015

By:

Woo, Gunhoo;
Kim, Taesung;
Yoo, Hocheon

Publication type:

Article

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200643

By:

Sun, Chen;
Li, Chao;
Samanta, Subhranu;
Han, Kaizhen;
Zheng, Zijie;
Zhang, Jishen;
Kong, Qiwen;
Xu, Haiwen;
Zhou, Zuopu;
Chen, Yue;
Zhuo, Cheng;
Ni, Kai;
Yin, Xunzhao;
Gong, Xiao

Publication type:

Article

Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200485

By:

Seo, Jae Eun;
Park, Eunpyo;
Das, Tanmoy;
Kwak, Joon Young;
Chang, Jiwon

Publication type:

Article

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513

By:

Li, Yang;
Zhang, Xisai;
Duan, Xinpei;
Niu, Wencheng;
Zhao, Shengjie;
He, Xiaobo;
Huang, Hao;
Liu, Xingqiang;
Zou, Xuming;
Li, Lei;
Shan, Fukai;
Yang, Zhenyu

Publication type:

Article

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202101370

By:

Ryu, Huije;
Kim, Dong‐Hyun;
Kwon, Junyoung;
Park, Sang Kyu;
Lee, Wanggon;
Seo, Hyungtak;
Watanabe, Kenji;
Taniguchi, Takashi;
Kim, SunPhil;
van der Zande, Arend M.;
Son, Jangyup;
Lee, Gwan‐Hyoung

Publication type:

Article

Highly Efficient Polarization‐Controlled Electrical Conductance Modulation in a van der Waals Ferroelectric/Semiconductor Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200413

By:

Parker, Jacob;
Gu, Yi

Publication type:

Article

Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161

By:

Farronato, Matteo;
Melegari, Margherita;
Ricci, Saverio;
Hashemkhani, Shahin;
Bricalli, Alessandro;
Ielmini, Daniele

Publication type:

Article

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101189

By:

Zhang, Qing;
Xiong, Hao;
Wang, Qiangfei;
Xu, Liping;
Deng, Menghan;
Zhang, Jinzhong;
Fuchs, Dirk;
Li, Wenwu;
Shang, Liyan;
Li, Yawei;
Hu, Zhigao;
Chu, Junhao

Publication type:

Article

Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n‐/p‐Channels via Dry Soft‐Lithographic Process.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101041

By:

Oh, Sangyoon;
Park, Sang Kyu;
Park, Soo Young

Publication type:

Article

Ultra‐Thin Chips with Printed Interconnects on Flexible Foils.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101029

By:

Ma, Sihang;
Kumaresan, Yogeenth;
Dahiya, Abhishek Singh;
Dahiya, Ravinder

Publication type:

Article

Ultralow‐Power Synaptic Transistors Based on Ta2O5/Al2O3 Bilayer Dielectric for Algebraic Arithmetic.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100922

By:

Wang, Jiaxin;
Wang, Jialiang;
Zhang, Jiaona;
Huang, Weihong;
Wang, Xinwei;
Zhang, Min

Publication type:

Article