Works matching DE "BIPOLAR transistors"
Results: 540
GRID CODE DEFENCE.
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- Power Engineer, 2005, v. 19, n. 6, p. 46
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- Article
MONSTER MOTION.
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- Power Engineer, 2004, v. 18, n. 3, p. 40, doi. 10.1049/pe:20040308
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Tough Transient Ionic Junctions Printed with Ionic Microgels.
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- Advanced Functional Materials, 2023, v. 33, n. 20, p. 1, doi. 10.1002/adfm.202213677
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Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein.
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- Advanced Functional Materials, 2022, v. 32, n. 38, p. 1, doi. 10.1002/adfm.202204781
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Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201970113
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Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals.
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201807893
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- Article
Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band.
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- Wireless Personal Communications, 2018, v. 103, n. 3, p. 2679, doi. 10.1007/s11277-018-5954-4
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Degradation state analysis of the IGBT module based on apparent junction temperature.
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- Protection & Control of Modern Power Systems, 2023, v. 8, n. 1, p. 1, doi. 10.1186/s41601-023-00327-5
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High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density.
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- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300624
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- Article
A solid-state microwave-range self-oscillating chaotic system with a simplified structure.
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- Technical Physics Letters, 2017, v. 43, n. 2, p. 180, doi. 10.1134/S1063785017020080
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Electrophysical properties of Si/SiO nanostructures fabricated by direct bonding.
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- Technical Physics Letters, 2016, v. 42, n. 6, p. 590, doi. 10.1134/S1063785016060079
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Generator of chaotic microwave oscillations based on a high-power bipolar transistor.
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- Technical Physics Letters, 2012, v. 38, n. 6, p. 506, doi. 10.1134/S1063785012060156
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Increasing the operating frequency in high-power distributed microgate bipolar switches.
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- Technical Physics Letters, 2010, v. 36, n. 10, p. 945, doi. 10.1134/S1063785010100214
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- Article
A Bipolar Transistor-Based High-Power Chaotic Oscillator with Selected Inertia.
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- Technical Physics, 2020, v. 65, n. 12, p. 2056, doi. 10.1134/S1063784220120245
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- Article
Kronecker Product Based Modeling of Darlington Amplifier and State Estimation using Unscented Kalman Filter.
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- International Journal of Electronics Letters, 2023, v. 11, n. 4, p. 411, doi. 10.1080/21681724.2022.2087916
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Low voltage base current cancellation circuit.
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- International Journal of Electronics Letters, 2020, v. 8, n. 4, p. 437, doi. 10.1080/21681724.2019.1636292
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- Article
Split-Voltage Configuration Improves Integrated Amplifier Power-Efficiency.
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- Journal of Low Power Electronics & Applications, 2024, v. 14, n. 3, p. 45, doi. 10.3390/jlpea14030045
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Integrated opposite charge grafting induced ionic-junction fiber.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37884-0
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COMPARATIVE ASSESSMENT BETWEEN A COUNTERFEITED AND A GENUINE POWER BJT.
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- Journal of Science & Arts, 2020, v. 20, n. 3, p. 775, doi. 10.46939/J.Sci.Arts-20.3-c04
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- Article
THE MAIN CHARACTERISTICS FOR HALL SEMICONDUCTOR PLATES.
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- Annals (Constanţa Maritime University), 2011, v. 11, n. 14, p. 213
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Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.
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- Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792
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Editorial.
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- 2024
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- Editorial
ON THE DETECTION LIMIT OF THE LATERAL BIPOLAR MAGNETOTRANSISTORS.
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- Annals of DAAAM & Proceedings, 2011, p. 1171
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- Article
Macro-fibre composite actuators for the transduction of Lamb and horizontal shear ultrasonic guided waves.
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- Insight: Non-Destructive Testing & Condition Monitoring, 2013, v. 55, n. 2, p. 72, doi. 10.1784/insi.2012.55.2.72
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A novel technique for CAD-optimization of analog circuits with bipolar transistors.
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- Advances in Radio Science, 2009, v. 7, p. 219, doi. 10.5194/ars-7-219-2009
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A Vector Network Analyzer Based on Pulse Generators.
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- Advances in Radio Science, 2005, v. 3, p. 65, doi. 10.5194/ars-3-65-2005
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- Article
Generation of short electrical pulses based on bipolar transistors.
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- Advances in Radio Science, 2004, v. 2, p. 7
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INFLUENCE OF INHOMOGENEITY OF A MULTILAYER STRUCTURE ON REDISTRIBUTION OF INFUSED DOPANT DURING PRODUCTION - A BIPOLAR TRANSISTOR.
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- International Journal of Nanoscience, 2010, v. 9, n. 3, p. 159, doi. 10.1142/S0219581X10006661
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Cost-optimized switched reluctance motor drive with bipolar currents.
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- Electrical Engineering, 2007, v. 89, n. 3, p. 183, doi. 10.1007/s00202-005-0336-9
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- Article
Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement.
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- Journal of Engineering Physics & Thermophysics, 2016, v. 89, n. 2, p. 514, doi. 10.1007/s10891-016-1404-x
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- Article
Modeling of the parameters of bipolar transistors.
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- Journal of Engineering Physics & Thermophysics, 2007, v. 80, n. 3, p. 617, doi. 10.1007/s10891-007-0081-1
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- Article
Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC.
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- World Electric Vehicle Journal, 2023, v. 14, n. 4, p. 112, doi. 10.3390/wevj14040112
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- Article
DC Hard Faults Detection and Localization in Analog Circuits Using Fuzzy Logic Techniques.
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- Electronics / Elektronika (1450-5843), 2019, v. 23, n. 1, p. 18, doi. 10.7251/ELS1923018M
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- Article
An Interface‐Controlled Redox Switch for Wastewater Remediation.
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- ChemElectroChem, 2018, v. 5, n. 2, p. 362, doi. 10.1002/celc.201700942
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- Article
REAL-TIME PROGNOSTICS OF FAULT SYMPTOM PARAMETERS WITH DBN-BASED INSULATED GATE BIPOLAR TRANSISTOR FAILURE MODELING.
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- Journal of the Balkan Tribological Association, 2016, v. 22, n. 4-II, p. 4241
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- Article
Graphene: Synthesis, bio-applications, and properties.
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- Artificial Cells, Nanomedicine & Biotechnology, 2016, v. 44, n. 1, p. 150, doi. 10.3109/21691401.2014.927880
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- Article
Novel resonator providing class‐F oscillation with better performance compared with available alternatives.
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- International Journal of Circuit Theory & Applications, 2021, v. 49, n. 10, p. 3466, doi. 10.1002/cta.3120
- Publication type:
- Article
Suppressing derivatives of selected variables in Verilog‐A.
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- International Journal of Circuit Theory & Applications, 2019, v. 47, n. 5, p. 805, doi. 10.1002/cta.2625
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Series‐type charger with output voltage automatically regulated and hot swap.
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- International Journal of Circuit Theory & Applications, 2019, v. 47, n. 4, p. 633, doi. 10.1002/cta.2597
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- Article
Bipolar Membrane-Assisted Solar Water Splitting in Optimal pH.
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- Advanced Energy Materials, 2016, v. 6, n. 13, p. 1, doi. 10.1002/aenm.201600100
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- Article
Monolithic 3-terminal perovskite/silicon HBT-based tandem compatible with both-side contact silicon cells: a theoretical study.
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- EPJ Photovoltaics, 2023, v. 14, p. 1, doi. 10.1051/epjpv/2023024
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- Article
A Bipolar Transport Model for Polyethylene Films under Low Dynamics of Space Charge Current.
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- Journal of Electrical Engineering: Theory & Application, 2010, v. 1, n. 2, p. 120
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- Article
On the Realization of First-Order Current-Mode AP/HP Filter.
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- Radioengineering, 2013, v. 22, n. 4, p. 1007
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- Article
Novel Resistorless First-Order Current-Mode Universal Filter Employing a Grounded Capacitor.
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- Radioengineering, 2011, v. 20, n. 3, p. 656
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- Publication type:
- Article
Very Low Noise Multiplexing with SQUIDs and SiGe Heterojunction Bipolar Transistors for Readout of Large Superconducting Bolometer Arrays.
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- Journal of Low Temperature Physics, 2008, v. 151, n. 3/4, p. 1028, doi. 10.1007/s10909-008-9777-7
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- Article
High Dynamic Range SQUID Readout for Frequency-Domain Multiplexers.
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- Journal of Low Temperature Physics, 2008, v. 151, n. 3/4, p. 952, doi. 10.1007/s10909-008-9765-y
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- Article
Spin Transistors vs. Conventional Transistors: What Are the Benefits?
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- Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 61, doi. 10.1007/s10948-009-0537-y
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- Article
Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP).
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- International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 2, p. 24, doi. 10.5013/IJSSST.a.15.02.04
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- Article
PLASTIC-STRAIN OF ALUMINIUM INTERCONNECTIONS DURING PULSED OPERATION OF IGBT MULTICHIP MODULES.
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- Quality & Reliability Engineering International, 1996, v. 12, n. 4, p. 297, doi. 10.1002/(SICI)1099-1638(199607)12:4<297::AID-QRE21>3.0.CO;2-C
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- Article
TEMPERATURE-HUMIDITY INDUCED MECHANISMS IN PLASTIC ENCAPSULATED BIPOLAR TRANSISTORS.
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- Quality & Reliability Engineering International, 1990, v. 6, n. 5, p. 317
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- Article