Works matching DE "INDIUM antimonide crystals"
Results: 50
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate.
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- Journal of Communications Technology & Electronics, 2017, v. 62, n. 3, p. 309, doi. 10.1134/S1064226917030068
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Independent operation time of photodetectors of the (3-5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures.
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- Journal of Communications Technology & Electronics, 2017, v. 62, n. 3, p. 326, doi. 10.1134/S106422691703010X
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- Article
Interaction of indium antimonide with saturated sulfur vapor.
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- Doklady Chemistry, 2016, v. 471, n. 2, p. 365, doi. 10.1134/S0012500816120077
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- Article
Low temperature Hall effect studies of InSb thin films grown by flash evaporation.
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- European Physical Journal - Applied Physics, 2011, v. 54, n. 1, p. N.PAG, doi. 10.1051/epjap/2011100484
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Finite Element Analysis of Millimeter and Sub-Millimeter Wave Gyroelectric Waveguide Components.
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- Electromagnetics, 2006, v. 26, n. 6, p. 405, doi. 10.1080/02726340600837875
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Indium antimonide transistors enable low voltage, fast switching.
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- Advanced Materials & Processes, 2005, v. 163, n. 7, p. 12
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- Article
Study of annealing effects in In-Sb bilayer thin films.
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- Bulletin of Materials Science, 2007, v. 30, n. 2, p. 117, doi. 10.1007/s12034-007-0021-x
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MTF Issues in Small-Pixel-Pitch Planar Quantum IR Detectors.
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- Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3025, doi. 10.1007/s11664-014-3185-3
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- Article
Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb.
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- Journal of Electronic Materials, 2008, v. 37, n. 2, p. 152, doi. 10.1007/s11664-007-0309-z
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- Article
Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes.
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- Optical & Quantum Electronics, 2011, v. 42, n. 11-13, p. 801, doi. 10.1007/s11082-011-9488-1
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- Article
Electron and phonon dynamics in indium antimonide crystals.
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- Optical & Quantum Electronics, 2008, v. 40, n. 2-4, p. 249, doi. 10.1007/s11082-007-9152-y
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- Article
Influence of Microaccelerations on the Impurity Distribution in the InSb:Te Crystals Grown in Orbital Flights by the Method of Floating Zone Melting.
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- Cosmic Research, 2004, v. 42, n. 2, p. 148, doi. 10.1023/B:COSM.0000025978.52989.58
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- Article
Acoustoelectric Attenuation and Phase Transition Due to Carriers in Semiconductor.
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- International Transactions in Applied Sciences, 2011, v. 3, n. 4, p. 835
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- Article
The composition and structure of interphase boundaries of III-V semiconductors formed in a liquid medium.
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- Russian Physics Journal, 2012, v. 54, n. 12, p. 1375, doi. 10.1007/s11182-012-9757-x
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- Article
Scattering of current carriers with spin flipping in indium antimonide.
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- Russian Physics Journal, 2007, v. 50, n. 9, p. 955, doi. 10.1007/s11182-007-0138-9
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- Article
Magnetically stabilized electron–hole liquid in indium antimonide.
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- Journal of Experimental & Theoretical Physics, 1997, v. 84, n. 2, p. 406, doi. 10.1134/1.558131
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- Article
Trap-assisted conductivity in anodic oxide on InSb.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 470, doi. 10.15407/spqeo20.04.470
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Synthesis and properties of semiconductor solid solutions (InSb)<sub>1-x</sub>(CdTe)<sub>x</sub>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 80, doi. 10.15407/spqeo9.02.080
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- Article
Contents: (Part. Part. Syst. Charact. 10/2013).
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- Particle & Particle Systems Characterization, 2013, v. 30, n. 10, p. 823, doi. 10.1002/ppsc.201370039
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- Article
Synthesis of Colloidal Indium Antimonide Nanocrystals Using Stibine.
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- Particle & Particle Systems Characterization, 2013, v. 30, n. 10, p. 828, doi. 10.1002/ppsc.201370038
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Change in the structural state of III–V semiconductor compounds under mechanical stresses.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1095, doi. 10.1007/s11182-006-0030-z
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- Article
Thermoelectromotive Force of the Corbino Disk in a Quantizing Magnetic Field.
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- Russian Physics Journal, 2005, v. 48, n. 3, p. 328, doi. 10.1007/s11182-005-0128-8
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Noise spectroscopy as a method of monitoring the quality of developed semiconductor devices.
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- Measurement Techniques, 2011, v. 54, n. 6, p. 712, doi. 10.1007/s11018-011-9792-y
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- Article
Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals.
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- Journal of Applied Spectroscopy, 2017, v. 83, n. 6, p. 959, doi. 10.1007/s10812-017-0390-x
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- Article
Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH)CrO-HBr solutions.
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- Inorganic Materials, 2017, v. 53, n. 8, p. 781, doi. 10.1134/S0020168517080106
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Dislocations in manganese-doped InSb.
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- Inorganic Materials, 2012, v. 48, n. 10, p. 977, doi. 10.1134/S0020168512100093
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- Article
GaInBiAsSb/InSb and InBiAsSb/InSb heterostructures grown in a temperature gradient.
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- Inorganic Materials, 2012, v. 48, n. 9, p. 877, doi. 10.1134/S0020168512090154
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- Article
Investigation of fast processes in condensed matter by time-resolved x-ray diffraction.
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- Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 91, doi. 10.1007/s00339-009-5187-1
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Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition.
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- Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 4-6, p. 1211, doi. 10.1007/s00339-004-2720-0
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- Article
Evidence for the existence of an unusual structure in the nanorods of InSb.
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- Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 2, p. 133, doi. 10.1007/s00339-002-1444-2
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- Article
Picosecond X-ray diffraction studies of laser-excited acoustic phonons in InSb.
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- Applied Physics A: Materials Science & Processing, 2002, v. 75, n. 4, p. 467, doi. 10.1007/s003390201421
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- Article
Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy.
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- Applied Physics A: Materials Science & Processing, 1998, v. 66, n. 7, p. S171, doi. 10.1007/s003390051124
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- Article
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals.
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- Semiconductors, 2017, v. 51, n. 8, p. 1034, doi. 10.1134/S1063782617080309
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- Article
Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands.
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- Semiconductors, 2015, v. 49, n. 5, p. 570, doi. 10.1134/S1063782615050255
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- Article
On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs semiconductors.
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- Semiconductors, 2014, v. 48, n. 7, p. 839, doi. 10.1134/S1063782614070069
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- Article
Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field.
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- Semiconductors, 2012, v. 46, n. 7, p. 894, doi. 10.1134/S106378261207010X
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Radiative recombination of hot carriers in narrow-gap semiconductors.
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- Semiconductors, 2012, v. 46, n. 1, p. 29, doi. 10.1134/S1063782612010162
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- Article
Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons.
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- Semiconductors, 2004, v. 38, n. 7, p. 769, doi. 10.1134/1.1777597
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- Article
Localization of a Longitudinal Autosoliton in InSb.
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- Semiconductors, 2004, v. 38, n. 7, p. 788, doi. 10.1134/1.1777601
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- Article
Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field.
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- Semiconductors, 2002, v. 36, n. 3, p. 263, doi. 10.1134/1.1461399
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- Article
Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient.
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- Semiconductors, 2000, v. 34, n. 5, p. 525, doi. 10.1134/1.1188020
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- Article
Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor.
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- Semiconductors, 1999, v. 33, n. 8, p. 847, doi. 10.1134/1.1187795
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- Article
Electrical properties of nuclear-doped indium antimonide.
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- Semiconductors, 1999, v. 33, n. 7, p. 712, doi. 10.1134/1.1187766
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- Article
Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)].
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- 1998
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- Correction Notice
Photoluminescence of InSb quantum dots in GaAs and GaSb matrices.
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- Semiconductors, 1997, v. 31, n. 1, p. 55, doi. 10.1134/1.1187086
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- Article
Solid-state physics: Thermal spin power without magnets.
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- Nature, 2012, v. 487, n. 7406, p. 180, doi. 10.1038/487180a
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- Article
Megapixel digital InSb detector for midwave infrared imaging.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061008, doi. 10.1117/1.3572163
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- Article
Indium antimonide large-format detector arrays.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061016, doi. 10.1117/1.3590722
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Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb.
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- Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 743, doi. 10.1007/s00340-008-3294-x
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- Article
Thermal buckling analysis in InSb focal plane arrays detector.
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- Journal of Mechanical Science & Technology, 2013, v. 27, n. 6, p. 1809, doi. 10.1007/s12206-013-0502-3
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- Article