Redistribution of radiative recombination centers in the SiC/por-SiC/Dy₂O₃ structure under the influence of athermal microwave irradiation.

Okhrimenko, O. B.; Bacherikov, Yu. Yu.; Kolomys, O. F.; Maziar, D. M.; Strelchuk, V. V.; Lytvyn, V. K.; Konakova, R. V.

In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the distribution of radiative recombination centers in SiC/por-SiC/Dy2O3 structures. The analysis of photoluminescence spectra of these structures excited by the radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate has shown that the short-term action of microwave radiation leads to the migration of dislocations and, as a consequence, to redistribution of radiative recombination centers and local symmetry change.

RARE earth oxides; SILICON oxide; BAND gaps; SUBSTRATES (Materials science); SILICON carbide; MICROWAVES

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, Vol 27, Issue 3, p274

1560-8034

Academic Journal

10.15407/spqeo27.03.274