Works matching IS 1560-8034 AND VI 19 AND IP 1 AND DT 2016
Results: 20
Optical properties of graphene film growing on a thin copper layer.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 57, doi. 10.15407/spqeo19.01.057
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Analysis of the silicon solar cells efficiency. Type of doping and level optimization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067
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Electronic structure of 2H-SnSe<sub>2</sub>: ab initio modeling and comparison with experiment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 98, doi. 10.15407/spqeo19.01.098
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Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 1, doi. 10.15407/spqeo19.01.001
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Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 52, doi. 10.15407/spqeo19.01.052
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Carbon ceramics from plants: Graphitization of biomorphic matrixes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 109, doi. 10.15407/spqeo19.01.109
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Electrical and optical parameters of Cu<sub>6</sub>PS<sub>5</sub>I-based thin films deposited using magnetron sputtering.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 79, doi. 10.15407/spqeo19.01.079
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Temperature effect on light polarization in uniaxial crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 44, doi. 10.15407/spqeo19.01.044
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Speckle pattern formation in spatially limited optical systems.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 47, doi. 10.15407/spqeo19.01.047
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Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 90, doi. 10.15407/spqeo19.01.090
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Electron transport through nanocomposite SiO<sub>2</sub>(Si) films containing Si nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 9, doi. 10.15407/spqeo19.01.009
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Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 14, doi. 10.15407/spqeo19.01.014
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The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 116, doi. 10.15407/spqeo19.01.116
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Optimization of surface plasmon resonance based biosensor for clinical diagnosis of the Epstein-Barr herpes virus disease.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 84, doi. 10.15407/spqeo19.01.084
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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 62, doi. 10.15407/spqeo19.01.062
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Features of tensoresistance in single crystals of germanium and silicon with different dopants.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 39, doi. 10.15407/spqeo19.01.039
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Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 75, doi. 10.15407/spqeo19.01.075
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Acoustic-stimulated relaxation of GaAs<sub>1-x</sub>P<sub>x</sub> LEDs electroluminescence intensity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 34, doi. 10.15407/spqeo19.01.034
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Search of mode wavelengths in planar waveguides by using Fourier transform of wave equation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 28, doi. 10.15407/spqeo19.01.028
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Automated method for determining the etch pits density on crystallographic planes of large semiconductor crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 23, doi. 10.15407/spqeo19.01.023
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