Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric.

Nazarov, A. N.; Gomeniuk, Y. V.; Gomeniuk, Y. Y.; Lysenko, V. S.; Gottlob, H. D. B.; Schmidt, M.; Lemme, M. C.; Czernohorsky, M.; Osten, H. J.

Charge trapping in ultrathin high-κ Gd2O3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes the reversible trapping of the positive charge in the dielectric layer, without electrical degradation of the dielectric and dielectric-semiconductor interface. The capture cross-sections of the hole traps are around 10-18 and 2 × 10-20 cm2. The respective shift of the C-V curve correlates with a "plateau" at the capacitance corresponding to weak accumulation at the silicon interface.

DIELECTRICS research; ELECTROMAGNETIC induction; SEMICONDUCTOR junctions; HYSTERESIS; PHYSICAL sciences

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, Vol 11, Issue 4, p324

1560-8034

Academic Journal

10.15407/spqeo11.04.324