Title: Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.
Authors: Nazarov, A. N.; Lysenko, V. S.; Nazarova, T. M.
Abstract: The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.
Subjects: HYDROGEN; PLASMA effects in solids; SILICA; NANOCRYSTALS; LIGHT emitting diodes; NANOELECTRONICS
Publication: Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, Vol 11, Issue 2, p101
ISSN: 1560-8034
Publication type: Academic Journal
DOI: 10.15407/spqeo11.02.101

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.

Nazarov, A. N.; Lysenko, V. S.; Nazarova, T. M.