Works matching AU Dan’ko, V. A.

Results: 19

ANALYSIS OF THE OPERATION PECULIARITIES OF THE SUPERCONDUCTING INDUCTIVE CURRENT LIMITER WITH ADDITIONAL SUPERCONDUCTING SCREEN.
Published in:
Electrical Engineering & Electromechanics, 2017, n. 4, p. 16, doi. 10.20998/2074-272X.2017.4.03
By:
- Dan'ko, V. G.;
- Goncharov, E. V.;
- Poliakov, I. V.
Publication type:
Article
Features of operation of a superconducting current limiter at the sudden short circuit.
Published in:
Electrical Engineering & Electromechanics, 2014, n. 6, p. 30, doi. 10.20998/2074-272x.2014.6.04
By:
- Dan'ko, V. G.;
- Goncharov, E. V.
Publication type:
Article
The Effect of an External Shield on the Efficiency of an Induction-Type Linear-Pulse Electromechanical Converter.
Published in:
Russian Electrical Engineering, 2018, v. 89, n. 4, p. 275, doi. 10.3103/S106837121804003X
By:
- Bolyukh, V. F.;
- Dan’ko, V. G.;
- Oleksenko, S. V.
Publication type:
Article
Photoinduced etching of thin films of chalcogenide glassy semiconductors.
Published in:
Semiconductors, 2012, v. 46, n. 4, p. 504, doi. 10.1134/S1063782612040057
By:
- Dan'ko, V.;
- Indutnyi, I.;
- Min'ko, V.;
- Shepelyavyi, P.;
- Bereznyova, O.;
- Lytvyn, O.
Publication type:
Article
Calculating the parameters of an inductive short-circuit current limiter with a superconducting shield.
Published in:
Russian Electrical Engineering, 2013, v. 84, n. 9, p. 478, doi. 10.3103/S1068371213090046
By:
- Dan’ko, V. G.;
- Goncharov, E. V.
Publication type:
Article
Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 68, doi. 10.15407/spqeo26.01.068
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Sopinskyy, M. V.;
- Dan’ko, V. A.;
- Yukhymchuk, V. O.
Publication type:
Article
The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As4Ge30S66 structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 436, doi. 10.15407/spqeo24.04.436
By:
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Sopinskyy, M. V.;
- Dan'ko, V. A.;
- Lytvyn, P. M.
Publication type:
Article
Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 48, doi. 10.15407/spqeo24.01.048
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Lytvyn, P. M.;
- Lukaniuk, M. V.;
- Bandarenka, H. V.;
- Dolgyi, A. L.;
- Redko, S. V.
Publication type:
Article
Doping the thin films by using the original Close Space Sublimation method.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 1, p. 5, doi. 10.15407/spqeo23.01.005
By:
- Khomchenko, V. S.;
- Sopinskyy, M. V.;
- Dan'ko, V. A.;
- Olkhovik, G. P.
Publication type:
Article
Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 353, doi. 10.15407/spqeo22.03.353
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Mamykin, S. V.;
- Shepeliavyi, P. Ye.;
- Lukaniuk, M. V.;
- Lytvyn, P. M.
Publication type:
Article
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 438, doi. 10.15407/spqeo18.04.438
By:
- Dan'ko, V. A.;
- Dorozinsky, G. V.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Ushenin, Yu. V.;
- Shepeliavyi, P. E.;
- Lukaniuk, M. V.;
- Korchovyi, A. A.;
- Khrystosenko, R. V.
Publication type:
Article
Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Photostimulated etching of germanium chalcogenide films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 345
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Shepeliavyi, P. E.;
- Lukyanyuk, M. V.;
- Litvin, O. S.
Publication type:
Article
Controlling the photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 413, doi. 10.15407/spqeo13.04.413
By:
- Dan'ko, V. A.;
- Bratus', V. Ya.;
- Indutnyi, I. Z.;
- Lisovskyy, I. P.;
- Zlobin, S. O.;
- Michailovska, K. V.;
- Shepeliavyi, P. E.
Publication type:
Article
Shack-hartmann wavefront sensor with holographic lenslet array for the aberration measurements in a speckle field.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 29, doi. 10.15407/spqeo11.01.029
By:
- Podanchuk, D. V.;
- Kurashov, V. N.;
- Dan'ko, V. P.;
- Kotov, M. M.;
- Sutyagina, N. S.
Publication type:
Article
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009
By:
- Indutnyy, I. Z.;
- Lysenko, V. S.;
- Maidanchuk, I. Yu.;
- Min’ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepeliavyi, P. E.;
- Dan’ko, V. A.
Publication type:
Article
Visible photoluminescence of selectively etched porous nc-Si-Siox structures.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120
By:
- Indutnyi, I. Z.;
- Michailovska, E. V.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223
By:
- Indutnyy, I. Z.;
- Maǐdanchuk, I. Yu.;
- Min'ko, V. I.;
- Shepelyavyǐ, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270
By:
- Dan'ko, V. A.;
- Indutnyı, I. Z.;
- Lysenko, V. S.;
- Maıdanchuk, I. Yu.;
- Min'ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepelyavyı, P. E.
Publication type:
Article

Works matching AU Dan’ko, V. A.

ANALYSIS OF THE OPERATION PECULIARITIES OF THE SUPERCONDUCTING INDUCTIVE CURRENT LIMITER WITH ADDITIONAL SUPERCONDUCTING SCREEN.

Features of operation of a superconducting current limiter at the sudden short circuit.

The Effect of an External Shield on the Efficiency of an Induction-Type Linear-Pulse Electromechanical Converter.

Photoinduced etching of thin films of chalcogenide glassy semiconductors.

Calculating the parameters of an inductive short-circuit current limiter with a superconducting shield.

Luminescent and Raman study of nanostructures formed upon annealing of SiO<sub>x</sub>:Sm films.

The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As<sub>4</sub>Ge<sub>30</sub>S<sub>66</sub> structures.

Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.

Doping the thin films by using the original Close Space Sublimation method.

Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.

Photostimulated etching of germanium chalcogenide films.

Controlling the photoluminescence spectra of porous nc-Si-SiO<sub>x</sub> structures by vapor treatment.

Shack-hartmann wavefront sensor with holographic lenslet array for the aberration measurements in a speckle field.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.