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- Title
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.
- Authors
Lysenko, V. S.; Tyagulsky, I. P.; Osiyuk, I. N.; Nazarov, A. N.
- Abstract
The results of experiments on the influence of recharging the electron traps in a Si-SiO2 transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters of the transition layer.
- Subjects
SILICON; ELECTRONS; GAMMA rays; LOW temperatures; TRANSITION temperature
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, Vol 10, Issue 2, p34
- ISSN
1560-8034
- Publication type
Academic Journal
- DOI
10.15407/spqeo10.02.034