Title: Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.
Authors: Lysenko, V. S.; Tyagulsky, I. P.; Osiyuk, I. N.; Nazarov, A. N.
Abstract: The results of experiments on the influence of recharging the electron traps in a Si-SiO2 transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters of the transition layer.
Subjects: SILICON; ELECTRONS; GAMMA rays; LOW temperatures; TRANSITION temperature
Publication: Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, Vol 10, Issue 2, p34
ISSN: 1560-8034
Publication type: Academic Journal
DOI: 10.15407/spqeo10.02.034

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Lysenko, V. S.; Tyagulsky, I. P.; Osiyuk, I. N.; Nazarov, A. N.