Works matching IS 12303402 AND DT 2015 AND VI 23 AND IP 3

Results: 7
    1

    AlGaN/GaN HEMT's photoresponse to high intensity THz radiation.

    Published in:
    Opto-Electronics Review, 2015, v. 23, n. 3, p. 195, doi. 10.1515/oere-2015-0026
    By:
    • Dyakonova, N.;
    • But, D.B.;
    • Coquillat, D.;
    • Knap, W.;
    • Drexler, C.;
    • Olbrich, P.;
    • Karch, J.;
    • Schafberger, M.;
    • Ganichev, S.D.;
    • Ducournau, G.;
    • Gaquiere, C.;
    • Poisson, M.−A.;
    • Delage, S.;
    • Cywinski, G.;
    • Skierbiszewski, C.
    Publication type:
    Article
    2
    3
    4

    Background donor concentration in HgCdTe.

    Published in:
    Opto-Electronics Review, 2015, v. 23, n. 3, p. 200, doi. 10.1515/oere-2015-0029
    By:
    • Izhnin, I.I.;
    • Mynbaev, K.D.;
    • Voitsekhovsky, A.V.;
    • Korotaev, A.G.;
    • Fitsych, O.I.;
    • Pociask−Bialy, M.;
    • Dvoretsky, S.A.
    Publication type:
    Article
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