Works matching DE "INDIUM gallium nitride"
Results: 517
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation.
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- Advanced Functional Materials, 2023, v. 33, n. 26, p. 1, doi. 10.1002/adfm.202300042
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- Article
Polymer‐Encapsulated Halide Perovskite Color Converters to Overcome Blue Overshoot and Cyan Gap of White Light‐Emitting Diodes.
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- Advanced Functional Materials, 2023, v. 33, n. 25, p. 1, doi. 10.1002/adfm.202300583
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- Article
Dynamic Extracellular Imaging of Biochemical Cell Activity Using InGaN/GaN Nanowire Arrays as Nanophotonic Probes.
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- Advanced Functional Materials, 2018, v. 28, n. 39, p. N.PAG, doi. 10.1002/adfm.201802503
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Towards Sub‐Microscale Liquid Metal Patterns: Cascade Phase Change Mediated Pick‐n‐Place Transfer of Liquid Metals Printed and Stretched over a Flexible Substrate.
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- Advanced Functional Materials, 2018, v. 28, n. 28, p. 1, doi. 10.1002/adfm.201800380
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- Article
Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation.
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- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-018-0105-0
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- Article
The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells.
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- Iraqi Journal of Physics, 2022, v. 20, n. 1, p. 1, doi. 10.30723/ijp.v20i1.965
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- Article
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed (Adv. Electron. Mater. 3/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370014
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Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193
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- Article
Very High Density (>10<sup>14</sup> cm<sup>−2</sup>) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101120
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- Article
Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100598
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- Article
The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells.
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- Technical Physics Letters, 2016, v. 42, n. 11, p. 1099, doi. 10.1134/S1063785016110146
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The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures.
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- Technical Physics Letters, 2015, v. 41, n. 8, p. 750, doi. 10.1134/S1063785015080143
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- Article
Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions.
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- Technical Physics Letters, 2014, v. 40, n. 5, p. 365, doi. 10.1134/S1063785014050095
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- Article
Direct and indirect mechanisms of auger recombination in n-InGaN.
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- Technical Physics Letters, 2014, v. 40, n. 5, p. 408, doi. 10.1134/S1063785014050277
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- Article
Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy.
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- Technical Physics Letters, 2014, v. 40, n. 1, p. 18, doi. 10.1134/S1063785014010106
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- Article
Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current.
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- Technical Physics, 2023, v. 68, n. 11, p. 428, doi. 10.1134/S1063784223900085
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- Article
A Method for Measuring the Internal Quantum Efficiency of InGaN LED Emission.
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- Technical Physics, 2022, v. 66, n. 4, p. 1107, doi. 10.1134/S1063784221080077
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- Article
A Method for Measuring the Internal Quantum Efficiency of InGaN LED Emission.
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- Technical Physics, 2021, v. 66, n. 10, p. 1107, doi. 10.1134/S1063784221080077
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- Article
Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion.
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- Transactions of the Japan Society of Aeronautical & Space Science, 2023, v. 66, n. 1, p. 10, doi. 10.2322/tjsass.66.10
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- Article
Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology.
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- National Science Review, 2025, v. 12, n. 1, p. 1, doi. 10.1093/nsr/nwae306
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- Article
Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation.
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- Engineering, Technology & Applied Science Research, 2024, v. 14, n. 4, p. 15784, doi. 10.48084/etasr.7726
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Ultrahigh GaN:SiO<sub>2</sub> etch selectivity by in situ surface modification of SiO<sub>2</sub> in a Cl<sub>2</sub>-Ar plasma.
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- 2021
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- Report
Efficient laser operation of diode-pumped Pr,Mg:SrAlO.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 109, doi. 10.1007/s00340-013-5655-3
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- Article
Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay.
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- Nature Communications, 2023, v. 14, p. 1, doi. 10.1038/s41467-023-36773-w
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- Article
InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 12, p. 1, doi. 10.1002/pssr.202400147
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- Article
Spontaneously Integrated Multicolor InGaN Micro‐Light‐Emitting Diodes for Spectrum‐Controllable Broadband Light Sources.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400094
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- Article
True‐Red InGaN Light‐Emitting Diodes for Display Applications.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400012
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- Article
Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 7, p. 1, doi. 10.1002/pssr.202200251
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- Article
Enhanced Resonant Energy Transfer by Decorating Au Nanoparticles on the Sidewalls of InGaN Multiple‐Quantum‐Well Nanorods.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 7, p. 1, doi. 10.1002/pssr.202200145
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- Article
A New Lead‐Free Cs<sub>12</sub>Zn<sub>3.1</sub>Mn<sub>0.9</sub>Cl<sub>20</sub> Perovskite Material for Light‐Emitting Diodes.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 5, p. 1, doi. 10.1002/pssr.202300445
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- Article
Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 7, p. 1, doi. 10.1002/pssr.202300027
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- Article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 1, p. 1, doi. 10.1002/pssr.202200323
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- Article
Monolithic InGaN Multicolor Light‐Emitting Devices.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 5, p. 1, doi. 10.1002/pssr.202100628
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- Article
Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 4, p. 1, doi. 10.1002/pssr.202100573
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Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 4, p. 1, doi. 10.1002/pssr.202100527
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- Article
Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 11, p. 1, doi. 10.1002/pssr.202100234
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- Article
Design of Efficient Type‐II ZnGeN<sub>2</sub>/In<sub>0.16</sub>Ga<sub>0.84</sub>N Quantum Well‐Based Red LEDs.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900170
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- Article
Impact of surface recombination on efficiency of III-nitride light-emitting diodes.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 6, p. 480, doi. 10.1002/pssr.201600059
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- Article
Correction to: Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.
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- 2023
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- Correction Notice
Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.
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- Nano-Micro Letters, 2023, v. 15, n. 1, p. 1, doi. 10.1007/s40820-023-01189-0
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- Article
Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN.
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- Journal of Metallurgy, 2012, p. 1, doi. 10.1155/2012/531915
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- Article
Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects.
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- Journal of Applied Crystallography, 2016, v. 49, n. 3, p. 961, doi. 10.1107/S1600576716006385
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- Article
Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2022, v. 47, n. 1, p. 1109, doi. 10.1007/s13369-021-06157-7
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- Article
Characterization of InGaN by Means of I- V Measurements of Respective Light-Emitting Diode (LED) by DLTS.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2015, v. 40, n. 1, p. 263, doi. 10.1007/s13369-014-1483-y
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- Article
Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture.
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- International Journal of Molecular Sciences, 2022, v. 23, n. 24, p. 16204, doi. 10.3390/ijms232416204
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- Article
Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure.
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- Journal of Materials Science, 2020, v. 55, n. 26, p. 11999, doi. 10.1007/s10853-020-04867-1
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- Article
Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors.
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- Journal of Materials Science, 2020, v. 55, n. 19, p. 8231, doi. 10.1007/s10853-020-04600-y
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- Article
Semipolar (11¯01) InGaN/GaN red-amber-yellow light-emitting diodes on triangular-striped Si (100) substrate.
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- Journal of Materials Science, 2019, v. 54, n. 10, p. 7780, doi. 10.1007/s10853-019-03473-0
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Simulation of doping levels and deep levels in InGaN-based single-junction solar cell.
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- Journal of Materials Science, 2012, v. 47, n. 11, p. 4595, doi. 10.1007/s10853-012-6321-6
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- Article
Luminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire.
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- Russian Physics Journal, 2023, v. 65, n. 11, p. 1875, doi. 10.1007/s11182-023-02845-z
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- Article