Works matching DE "NONVOLATILE random-access memory"
Results: 465
Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202370041
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Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application.
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202211022
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Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra (Adv. Funct. Mater. 4/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202270024
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Imaging Dielectric Breakdown in Valence Change Memory (Adv. Funct. Mater. 2/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 2, p. 1, doi. 10.1002/adfm.202270012
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Imaging Dielectric Breakdown in Valence Change Memory.
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- Advanced Functional Materials, 2022, v. 32, n. 2, p. 1, doi. 10.1002/adfm.202102313
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Low‐Energy Oxygen Plasma Injection of 2D Bi<sub>2</sub>Se<sub>3</sub> Realizes Highly Controllable Resistive Random Access Memory.
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- Advanced Functional Materials, 2022, v. 32, n. 1, p. 1, doi. 10.1002/adfm.202108455
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Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides.
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- Advanced Functional Materials, 2021, v. 31, n. 46, p. 1, doi. 10.1002/adfm.202102567
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Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 10<sup>10</sup>) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament
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- Advanced Functional Materials, 2021, v. 31, n. 37, p. 1, doi. 10.1002/adfm.202104054
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Performance‐Enhancing Selector via Symmetrical Multilayer Design.
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- Advanced Functional Materials, 2019, v. 29, n. 13, p. N.PAG, doi. 10.1002/adfm.201808376
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GripAble: An accurate, sensitive and robust digital device for measuring grip strength.
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- Journal of Rehabilitation & Assistive Technologies Engineering, 2022, v. 9, p. 1, doi. 10.1177/20556683221078455
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Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects.
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- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202400121
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Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504
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Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300286
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Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200998
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Optoelectronic Resistive Memory Based on Lead‐Free Cs<sub>2</sub>AgBiBr<sub>6</sub> Double Perovskite for Artificial Self‐Storage Visual Sensors.
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- Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200657
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Nonvolatile Electrochemical Random‐Access Memory under Short Circuit.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200958
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Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200656
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Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO<sub>3–x</sub> Based MIM Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200250
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Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432
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Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200332
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2D Heterostructure of Bi<sub>2</sub>O<sub>2</sub>Se/Bi<sub>2</sub>SeO<sub>x</sub> Nanosheet for Resistive Random Access Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200126
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A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101412
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An Optically, Electrically, Magnetically Controllable Dual‐Gate Phototransistor.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101378
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Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200765
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Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100758
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A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101235
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Effect of the Oxygen Composition Control of HfO<sub>x</sub> Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101257
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Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101015
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Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101018
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Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe<sub>2</sub>.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100905
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Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs<sub>3</sub>Sb<sub>2</sub>I<sub>9</sub> Lead‐Free Perovskite Memory Devices.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100237
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Application of Resistive Random Access Memory in Hardware Security: A Review.
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- Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100536
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Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide.
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- Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100322
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In Memory Energy Application for Resistive Random Access Memory.
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- Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100297
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Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202170048
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Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process.
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- Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100375
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Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100366
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Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000252
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Organic RAM: Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance (Adv. Electron. Mater. 4/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202170010
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- Article
An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag‐Based Devices.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202100022
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Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform.
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- Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000864
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Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.
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- Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000488
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Universal Memory Characteristics and Degradation Features of ZrO<sub>2</sub>‐Based Bipolar Resistive Memory.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000368
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In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209
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Cross‐Point Arrays with Low‐Power ITO‐HfO<sub>2</sub> Resistive Memory Cells Integrated on Vertical III‐V Nanowires.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000154
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Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066
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Conduction Response in Highly Flexible Nonvolatile Memory Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000151
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- Article
A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array.
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- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901324
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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.202000098
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- Article
Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au<sub>0.25</sub>Pt<sub>0.75</sub>.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901131
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