Works matching DE "MOLECULAR beam epitaxy"

Results: 2188

Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4291, doi. 10.1007/s11664-024-11673-x

By:

Hardy, Matthew T.;
Lang, Andrew C.;
Hart, James L.;
Jin, Eric N.;
Nepal, Neeraj;
Gokhale, Vikrant J.;
Downey, Brian P.;
Katzer, D. Scott;
Litwin, Peter M.;
Sales, Maria Gabriela;
Growden, Tyler A.;
Wheeler, Virginia D.

Publication type:

Article

Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 4, p. 2913, doi. 10.1007/s11664-025-11772-3

By:

Cao, Hechun;
Zhao, Dongyang;
Hu, Tao;
Zheng, Yunzhe;
Bai, Wei;
Chen, Yan;
Yang, Jing;
Zhang, Yuanyuan;
Cheng, Yan;
Huang, Rong;
Tang, Xiaodong;
Wang, Jianlu;
Chu, Junhao

Publication type:

Article

Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5803, doi. 10.1007/s11664-024-11082-0

By:

Saxena, P. K.;
Srivastava, P.;
Srivastava, A.

Publication type:

Article

Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2789, doi. 10.1007/s11664-024-10952-x

By:

Sarney, Wendy L.;
Ji, Mihee;
Leff, Asher C.;
Larkin, LeighAnn S.;
Garrett, Gregory A.;
Sampath, Anand V.;
Wraback, Michael

Publication type:

Article

Annealing temperature effects on structural and magnetic properties of Ga1-xMnxN films.

Published in:

Surface Engineering, 2012, v. 28, n. 7, p. 540, doi. 10.1179/1743294412Y.0000000014

By:

Hu, B;
Man, B Y;
Liu, M;
Chen, C S;
Gao, X G;
Xu, S C;
Wang, C C

Publication type:

Article

Fabrication of Novel Nanoarchitecture For epi-IZO Thin Films on.

Published in:

Surface Engineering, 2004, v. 20, n. 3, p. 205, doi. 10.1179/026708404225015040

By:

Ramamoorthy, K.;
Jayachandran, M.;
Sankaranarayanan, K.;
Ganesan, V.;
Misra, P.;
Kukreja, L. M.;
Sanjeeviraja, C.

Publication type:

Article

Improvement of GaInSb crystal quality by rotating magnetic field.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15654, doi. 10.1007/s10854-019-01947-0

By:

Wang, Ruqing;
Wang, Jinwei;
He, Guofang;
Yang, Donghai;
Zhang, Weicai;
Liu, Juncheng

Publication type:

Article

Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3927, doi. 10.1007/s10854-017-8332-1

By:

Ghosh, Kankat;
Sarkar, Ritam;
Bhunia, Swagata;
Laha, Apurba

Publication type:

Article

Structural, optical and electrical characterization of dilute nitride GaPAsN structures grown on Si and GaP substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 3, p. 1939, doi. 10.1007/s10854-017-8104-y

By:

Sertel, T.;
Ozen, Y.;
Cetin, S. S.;
Ozturk, M. K.;
Ozcelik, S.

Publication type:

Article

P-type single-crystalline ZnO films obtained by (Li, N) dual implantation through dynamic annealing process.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16215, doi. 10.1007/s10854-017-7523-0

By:

Zhang, Zhiyuan;
Huang, Jingyun;
Chen, Shanshan;
Pan, Xinhua;
Chen, Lingxiang;
Ye, Zhizhen

Publication type:

Article

Room-temperature metal-insulator transition of MBE grown VO film investigated by temperature dependent resistance and transmittance.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11046, doi. 10.1007/s10854-017-6888-4

By:

Wang, Minhuan;
Fan, Lele;
Bian, Jiming;
Zhang, Dong;
Liu, Hongzhu;
Sun, Hongjun;
Luo, Yingmin

Publication type:

Article

Comparison of GaAs photocathode grown by MOCVD and MBE: a first-principle and experimental research.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7429, doi. 10.1007/s10854-017-6432-6

By:

Xu, Yuan;
Chang, Benkang;
Chen, Liang;
Chen, Xinlong;
Qian, Yunsheng

Publication type:

Article

Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9341, doi. 10.1007/s10854-016-4974-7

By:

Zhang, Xu;
Liu, Zhi;
He, Chao;
Cheng, Buwen;
Xue, Chunlai;
Li, Chuanbo;
Wang, Qiming

Publication type:

Article

Morphology evolution of nano-structured InN grown by MOMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4285, doi. 10.1007/s10854-015-2980-9

By:

Kuo, Shou-Yi;
Chen, Wei-Chun;
Yang, Jui-Fu;
Hsiao, Chien-Nan;
Lai, Fang-I

Publication type:

Article

Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2480, doi. 10.1007/s10854-015-2709-9

By:

Fan, Jenn-Chyuan;
Lo, Yun-Yo;
Huang, Man-Fang;
Chen, Wei-Chi;
Liu, Chien-Chen;
Lee, C.;
Chiang, Yu-Chia

Publication type:

Article

Effects of annealing on the structural properties of indium rich InGaN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1197, doi. 10.1007/s10854-014-1709-5

By:

Ma, Quan-Bao;
Lieten, Ruben;
Borghs, Gustaaf

Publication type:

Article

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 9, p. 3371, doi. 10.1007/s10854-013-1257-4

By:

Bhat, Thirumaleshwara;
Rajpalke, Mohana;
Roul, Basanta;
Kumar, Mahesh;
Krupanidhi, S.

Publication type:

Article

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1635, doi. 10.1007/s10854-012-0987-z

By:

Fan, Dongsheng;
Zeng, Zhaoquan;
Dorogan, Vitaliy;
Hirono, Yusuke;
Li, Chen;
Mazur, Yuriy;
Yu, Shui-Qing;
Johnson, Shane;
Wang, Zhiming;
Salamo, Gregory

Publication type:

Article

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1799, doi. 10.1007/s10854-012-0665-1

By:

Riordan, Nathaniel;
Gogineni, Chaturvedi;
Johnson, Shane;
Lu, Xianfeng;
Tiedje, Tom;
Ding, Ding;
Zhang, Yong-Hang;
Fritz, Rafael;
Kolata, Kolja;
Chatterjee, Sangam;
Volz, Kerstin;
Koch, Stephan

Publication type:

Article

Effect of thickness on the structural and optical properties of GaN films grown on Si(111).

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 4, p. 972, doi. 10.1007/s10854-011-0529-0

By:

El-Naggar, Ahmed

Publication type:

Article

Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 10, p. 1024, doi. 10.1007/s10854-010-0104-0

By:

Kang Min Kim;
Krishnamurthy, Daivasigamani;
Yuji Sakai;
Jong-Uk Seo;
Hasegawa, Shigehiko;
Asahi, Hajime

Publication type:

Article

LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 425, doi. 10.1007/s10854-008-9661-x

By:

Ibáñez, J.;
Alarcón-Lladó, E.;
Cuscó, R.;
Artús, L.;
Fowler, D.;
Patanè, A.;
Uesugi, K.;
Suemune, I.

Publication type:

Article

Study of in-depth strain variation in ion-irradiated GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 68, doi. 10.1007/s10854-007-9540-x

By:

Herms, Martin;
Zeimer, Ute;
Sonia, Gnanapragasam;
Brunner, Frank;
Richter, Eberhard;
Weyers, Markus;
Tränkle, Günther;
Behm, Thomas;
Irmer, Gert;
Pensl, Gerhard;
Denker, Andrea;
Opitz-Coutureau, Jörg

Publication type:

Article

Defects in nanostructures with ripened InAs/GaAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 96, doi. 10.1007/s10854-008-9657-6

By:

Nasi, L.;
Bocchi, C.;
Germini, F.;
Prezioso, M.;
Gombia, E.;
Mosca, R.;
Frigeri, P.;
Trevisi, G.;
Seravalli, L.;
Franchi, S.

Publication type:

Article

Statistical methods of determining the QD dimensions based on atomic force microscopy measurements.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 347, doi. 10.1007/s10854-008-9656-7

By:

Piotrowski, T.;
Kaczmarczyk, M.

Publication type:

Article

Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 805, doi. 10.1007/s10854-007-9453-8

By:

Lahourcade, Lise;
Bellet-Amalric, Edith;
Monroy, Eva;
Chauvat, Marie Pierre;
Ruterana, Pierre

Publication type:

Article

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 311, doi. 10.1007/s10854-007-9335-0

By:

Kakemoto, Hirofumi;
Higuchi, Tohru;
Shibata, Hajime;
Wada, Satoshi;
Tsurumi, Takaaki

Publication type:

Article

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6

By:

Usui, Hiroyuki;
Yasuda, Hidehiro;
Mori, Hirotaro

Publication type:

Article

Influence of buffer surface preparation on the quality of Al x Ga1- x As/GaAs quantum wells studied by optical orientation experiments.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1157, doi. 10.1007/s10854-007-9255-z

By:

Mejía-García, C.;
Winter, A.;
López-López, M.;
Gilinsky, A.;
Pascher, H.

Publication type:

Article

MBE growth and structural characterization of ZnS1 - xSex thin films on ITO/glass substrates.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 6, p. 483, doi. 10.1023/A:1022992502295

By:

Shen, D.;
Au, S.Y.;
Han, G.;
Que, D.;
Wang, N.;
Sou, I. K.

Publication type:

Article

Numerical algorithms of subdivision-based IGA-EIEQ method for the molecular beam epitaxial growth models on complex surfaces.

Published in:

Computational Mechanics, 2023, v. 72, n. 5, p. 927, doi. 10.1007/s00466-023-02319-6

By:

Pan, Qing;
Zhang, Jin;
Rabczuk, Timon;
Chen, Chong;
Yang, Xiaofeng

Publication type:

Article

Measurement of intensity of the second optical harmonic in heteroepitaxial cadmium-mercury telluride structures.

Published in:

Measurement Techniques, 2010, v. 53, n. 6, p. 615, doi. 10.1007/s11018-010-9550-6

By:

Burlakov, I.;
Demin, A.;
Levin, G.;
Piskunov, N.;
Zabotnov, S.;
Kashuba, A.

Publication type:

Article

Gas-Sensing Properties of Thin Films Grown on the Surface of InP Single Crystals by Thermal Oxidation.

Published in:

Inorganic Materials, 2020, v. 56, n. 1, p. 66, doi. 10.1134/S0020168520010070

By:

Kostryukov, V. F.;
Mittova, I. Ya.;
Ali, Saud

Publication type:

Article

Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy.

Published in:

Inorganic Materials, 2019, v. 55, n. 4, p. 315, doi. 10.1134/S0020168519040095

By:

Ladugin, M. A.;
Andreev, A. Yu.;
Yarotskaya, I. V.;
Ryaboshtan, Yu. L.;
Bagaev, T. A.;
Padalitsa, A. A.;
Marmalyuk, A. A.;
Vasil'ev, M. G.

Publication type:

Article

Lattice-matched epitaxial PbMnSe/PbSeS heterojunctions.

Published in:

Inorganic Materials, 2014, v. 50, n. 5, p. 443, doi. 10.1134/S0020168514050136

By:

Nuriyev, I.;
Nazarov, A.;
Sadygov, R.;
Hajiyev, M.

Publication type:

Article

Structure and surface morphology of SiGe layers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source.

Published in:

Inorganic Materials, 2013, v. 49, n. 8, p. 749, doi. 10.1134/S0020168513070108

By:

Matveev, S.;
Denisov, S.;
Chalkov, V.;
Shengurov, V.;
Nikolichev, D.;
Boryakov, A.;
Trushin, V.;
Pitirimova, E.

Publication type:

Article

Defects in CdHgTe-based heterostructures grown by molecular beam epitaxy on GaAs(310) substrates.

Published in:

Inorganic Materials, 2012, v. 48, n. 7, p. 665, doi. 10.1134/S0020168512070126

By:

Permikina, E.;
Kashuba, A.;
Arbenina, V.

Publication type:

Article

Molecular beam epitaxy of PbEuTe and PbSnTe layers and related periodic structures.

Published in:

Inorganic Materials, 2010, v. 46, n. 10, p. 1065, doi. 10.1134/S0020168510100079

By:

Selivanov, Yu. G.;
Chizhevskii, E. G.;
Martovitskiy, V. P.;
Knotko, A. V.;
Zasavitskii, I. I.

Publication type:

Article

Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy.

Published in:

Inorganic Materials, 2009, v. 45, n. 1, p. 13, doi. 10.1134/S0020168509010038

By:

Yakushev, M.;
Babenko, A.;
Sidorov, Yu.

Publication type:

Article

Photoluminescence of self-forming nanoclusters grown in GeSi/Si heterostructures by sublimating molecular beam epitaxy in GeH4 medium.

Published in:

Inorganic Materials, 2008, v. 44, n. 11, p. 1157, doi. 10.1134/S0020168508110010

By:

Filatov, D. O.;
Kruglova, M. V.;
Isakov, M. A.;
Siprova, S. V.;
Marychev, M. O.;
Shengurov, V. G.;
Chalkov, V. Yu.;
Denisov, S. A.

Publication type:

Article

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy.

Published in:

Inorganic Materials, 2007, v. 43, n. 4, p. 331, doi. 10.1134/S0020168507040012

By:

Denisov, S.;
Svetlov, S.;
Chalkov, V.;
Shengurov, V.;
Pavlov, D.;
Korotkov, E.;
Pitirimova, E.;
Trushin, V.

Publication type:

Article

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy.

Published in:

Inorganic Materials, 2005, v. 41, n. 11, p. 1131, doi. 10.1007/s10789-005-0273-z

By:

Shengurov, V. G.;
Svetlov, S. P.;
Chalkov, V. Yu.;
Gorshenin, G. N.;
Shengurov, D. V.;
Denisov, S. A.

Publication type:

Article

Erbium and Germanium Profiles in Si1 – xGex Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4.

Published in:

Inorganic Materials, 2003, v. 39, n. 1, p. 3, doi. 10.1023/A:1021822715712

By:

Shengurov, V.G.;
Svetlov, S.P.;
Chalkov, V. Yu.;
Andreev, B.A.;
Krasil'nik, Z.F.;
Ber, B. Ya.;
Drozdov, Yu. N.

Publication type:

Article

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 1, p. 41, doi. 10.1049/mnl.2019.0167

By:

Chakraborty, Debraj;
Maity, Biswajit;
Mukherjee, Moumita

Publication type:

Article

Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 10, p. 1052, doi. 10.1049/mnl.2018.5825

By:

Dazheng Chen;
Yu Xu;
Zhiyuan An;
Zhe Li;
Chunfu Zhang

Publication type:

Article

Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00535-7

By:

Hilse, Maria;
Rodriguez, Justin;
Gray, Jennifer;
Yao, Jinyuan;
Ding, Shaoqing;
Liu, Derrick Shao Heng;
Li, Mo;
Young, Joshua;
Liu, Ying;
Engel-Herbert, Roman

Publication type:

Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article

2D Mg‐Cu Intermetallic Compounds with Nontrivial Band Topology and Dirac Nodal Lines.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100927

By:

Wu, Rongting;
Wu, Ze‐Bin;
Božović, Ivan

Publication type:

Article

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100777

By:

Rio Calvo, Marta;
Rodriguez, Jean‐Baptiste;
Cornet, Charles;
Cerutti, Laurent;
Ramonda, Michel;
Trampert, Achim;
Patriarche, Gilles;
Tournié, Éric

Publication type:

Article