Works matching DE "JUNCTION gate field effect transistors"
Results: 4
Influence of Gate Material and Process on Junctionless FET Subthreshold Performance.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2016, v. 6, n. 2, p. 895, doi. 10.11591/ijece.v6i2.407
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- Article
Analytical and experimental determination of the parasitic parameters in high-frequency inductor.
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- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2017, v. 65, n. 1, p. 107, doi. 10.1515/bpasts-2017-0013
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- Article
Junctionless II--gate transistor with indium gallium arsenide channel.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 1, doi. 10.1049/el.2012.4535
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- Article
Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits.
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- Journal of Microelectronic & Electronic Packaging, 2018, v. 15, n. 4, p. 163, doi. 10.4071/imaps.729648
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- Article