Effects of Gate Stack Structural and Process Defectivity on High-κ Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs. | EBSCOhost

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Title: Effects of Gate Stack Structural and Process Defectivity on High-κ Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs.
Authors: Hussin, H.; Soin, N.; Bukhori, M. F.; Hatta, S. Wan Muhamad; Wahab, Y. Abdul
Publication: Scientific World Journal, 2014, p1
ISSN: 1537-744X
Publication type: Academic Journal
DOI: 10.1155/2014/490829