Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer.

Sunhwa Lee; Seungman Park; Jinjoo Park; Youngkuk Kim; Hyeongsik Park; Juyeun Jang; Chonghoon Shin; Youn-Jung Lee; Seungsin Baek; Minbum Kim; Junhee Jung; Junsin Yi

We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer. p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy. One of the solar cells shows open circuit voltage (Voc) = 880 mV, short circuit current density (Jsc) = 14.21 mA/cm², fill factor (FF) = 72.03%, and efficiency (η) = 8.8% while the p-type layer was doped with 0.1%. The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate.

IMPEDANCE spectroscopy; SILICON solar cells; SEMICONDUCTOR doping; AMORPHOUS silicon; DIBORANE; X-ray photoelectron spectroscopy; DIODES; SHORT circuits

International Journal of Photoenergy, 2012, p1

1110-662X

Academic Journal

10.1155/2012/767248