Works matching DE "MAGNETIC tunnelling"
Results: 357
Deterministic Current‐Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 35, p. 1, doi. 10.1002/adfm.202209693
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- Article
Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction.
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- Advanced Functional Materials, 2023, v. 33, n. 23, p. 1, doi. 10.1002/adfm.202213402
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- Article
Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet‐Based Device via Spin–Orbit Torque.
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- Advanced Functional Materials, 2022, v. 32, n. 26, p. 1, doi. 10.1002/adfm.202112406
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- Article
Exchange Coupling in Synthetic Anion‐Engineered Chromia Heterostructures.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202109828
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- Article
Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202109455
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- Article
RKKY Exchange Bias Mediated Ultrafast All‐Optical Switching of a Ferromagnet.
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- Advanced Functional Materials, 2022, v. 32, n. 8, p. 1, doi. 10.1002/adfm.202107490
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- Article
RKKY Exchange Bias Mediated Ultrafast All‐Optical Switching of a Ferromagnet.
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- Advanced Functional Materials, 2022, v. 32, n. 8, p. 1, doi. 10.1002/adfm.202107490
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- Article
High-fidelity spin readout via the double latching mechanism.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00882-1
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- Article
All van der Waals Three‐Terminal SOT‐MRAM Realized by Topological Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400041
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- Article
Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581
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- Article
Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage‐Controlled Magnetic Tunnel Junctions.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300195
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- Article
Realization of Zero‐Field Skyrmions in a Magnetic Tunnel Junction.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201240
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- Article
Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370001
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- Article
Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200987
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- Article
Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200570
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- Article
Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing (Adv. Electron. Mater. 12/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202270064
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- Article
Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200563
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- Article
Ultralow Current Switching of Synthetic‐Antiferromagnetic Magnetic Tunnel Junctions Via Electric‐Field Assisted by Spin–Orbit Torque.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200382
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- Article
Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100805
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- Article
Tuning the High‐Efficiency Field‐Free Current‐Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content.
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- Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100528
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- Article
Interfacial Control via Reversible Ionic Motion in Battery‐Like Magnetic Tunnel Junctions (Adv. Electron. Mater. 9/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 9, p. 1, doi. 10.1002/aelm.202170041
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- Article
Interfacial Control via Reversible Ionic Motion in Battery‐Like Magnetic Tunnel Junctions.
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- Advanced Electronic Materials, 2021, v. 7, n. 9, p. 1, doi. 10.1002/aelm.202100512
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- Article
Prospect of Spintronics in Neuromorphic Computing.
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- Advanced Electronic Materials, 2021, v. 7, n. 9, p. 1, doi. 10.1002/aelm.202100465
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- Article
Multi‐State Magnetic Tunnel Junction Programmable by Nanosecond Spin‐Orbit Torque Pulse Sequence.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202001133
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- Publication type:
- Article
Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions.
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- Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000976
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- Article
Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000271
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- Article
External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901368
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- Article
Ultrathin Scattering Spin Filter and Magnetic Tunnel Junction Implemented by Ferromagnetic 2D van der Waals Material.
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- Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201900968
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- Article
A Spin–Orbit‐Torque Memristive Device.
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- Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800782
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- Article
Hardware Model for Stochastic Neuron Based on Magnetic Tunnel Junction in the Subcritical Current Switching Regime.
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- Computational Intelligence in Electrical Engineering, 2022, v. 13, n. 1, p. 18, doi. 10.22108/isee.2021.123472.1387
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- Article
The possibility of colossal magnetoresistance in heterostructures based on epitaxial graphene.
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- Technical Physics Letters, 2015, v. 41, n. 12, p. 1185, doi. 10.1134/S1063785015120160
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- Article
Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization.
- Published in:
- Sultan Qaboos University Journal for Science, 2020, v. 25, n. 1, p. 54, doi. 10.24200/squjs.vol25iss1pp54-60
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- Article
Spin Torque Oscillator for High Performance Magnetic Memory.
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- Sultan Qaboos University Journal for Science, 2015, v. 20, n. 1, p. 77, doi. 10.24200/squjs.vol20iss1pp77-82
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- Article
Spin-based magnetic random-access memory for high-performance computing.
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- National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwad272
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- Article
Tuning 2D magnetism in Fe3+XGeTe2 films by element doping.
- Published in:
- National Science Review, 2022, v. 9, n. 6, p. 1, doi. 10.1093/nsr/nwab117
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- Article
Write energy reduction of STT-MRAM based multi-core cache hierarchies.
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- International Journal of Electronics Letters, 2019, v. 7, n. 3, p. 249, doi. 10.1080/21681724.2018.1482005
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- Article
Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation.
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- Journal of Low Power Electronics & Applications, 2024, v. 14, n. 1, p. 3, doi. 10.3390/jlpea14010003
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- Article
A Spintronic 2M/7T Computation-in-Memory Cell.
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- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 4, p. 63, doi. 10.3390/jlpea12040063
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- Publication type:
- Article
Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects.
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- Journal of Low Power Electronics & Applications, 2019, v. 9, n. 2, p. 15, doi. 10.3390/jlpea9020015
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- Publication type:
- Article
Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37866-2
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- Article
Nonlinear amplification of microwave signals in spin-torque oscillators.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37916-9
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- Article
Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 6, p. 1, doi. 10.1002/pssr.202200493
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- Article
Multistate Magnetic Domain Wall Devices for Neuromorphic Computing.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 7, p. 1, doi. 10.1002/pssr.202100125
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- Article
Structural and Magnetic Properties of Mn<sub>3</sub>Ge Grown on a Thin Polycrystalline MgO Seed Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 6, p. N.PAG, doi. 10.1002/pssr.201800681
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- Article
Breaking the Symmetry for Magnetic Reorientation with Perpendicular Magnetic Anisotropy.
- Published in:
- IUP Journal of Mechanical Engineering, 2023, v. 16, n. 2, p. 37
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- Article
Editorial: Nanotechnologies in Neuroscience and Neuroengineering.
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- 2020
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- Publication type:
- Editorial
LAO-NCS: Laser Assisted Spin Torque Nano Oscillator-Based Neuromorphic Computing System.
- Published in:
- Frontiers in Neuroscience, 2020, v. 13, p. 1, doi. 10.3389/fnins.2019.01429
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- Article
Computational delving into conceivable thermoelectric and spintronic applications of NH<sub>4</sub>AF<sub>3</sub> (A = Fe and Co) ferromagnets.
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- Canadian Journal of Physics, 2022, v. 100, n. 7, p. 319, doi. 10.1139/cjp-2021-0227
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- Article
Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs).
- Published in:
- International Journal of Molecular Sciences, 2022, v. 23, n. 22, p. 14476, doi. 10.3390/ijms232214476
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- Article
Evaluation of Soft-Delay-Error Effects in Content-Addressable Memory.
- Published in:
- Journal of Multiple-Valued Logic & Soft Computing, 2016, v. 26, n. 1-2, p. 125
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- Publication type:
- Article