Works matching IS 20103247 AND DT 2020 AND VI 10 AND IP 2

Results: 10

Effects of Si Doping on the Structural, Electronic and Optical Properties of Barium Chalcogenide BaS: A First-Principles Study.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720500149

By:

Absike, H.;
Labrim, H.;
Hartiti, B.;
Ez-Zahraouy, H.

Publication type:

Article

Electronic Structure and Ferromagnetic Properties of Doped Calcium Sulfide Ca1−xTMxS (TM = V, Cr and Co).

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720500137

By:

Aiche, Amina;
Tadjer, Abdelkader;
Ahmed Mazouz, Hadj Moulay;
Doumi, Bendouma;
Khachai, Houari

Publication type:

Article

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720500125

By:

Bhoomeeswaran, H.;
Sabareesan, P.

Publication type:

Article

Theoretical Prediction of the Structural, Elastic, Electronic and Thermodynamic Properties of Binary CoP3 and Ternary FeCoP3 Skutterudites Materials.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720500113

By:

Zouablia, Riadh;
Benabdellah, Ghlamallah;
Mokhtari, Mohamed;
Hiadsi, Said

Publication type:

Article

High Spin Polarization and Thermoelectric Efficiency of Half-Metallic Ferromagnetic CrYSn (Y=Ca, Sr) of Half-Heusler Compounds.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720500101

By:

Bouadjemi, B.;
Lantri, T.;
Matougui, M.;
Houari, M.;
Bentata, R.;
Aziz, Z.;
Bentata, S.

Publication type:

Article

Approximate 5-2 Compressor Cell Using Spin-Based Majority Gates.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720400044

By:

Shafiabadi, Mohammad Ali;
Sharifi, Fazel

Publication type:

Article

Three Artificial Spintronic Leaky Integrate-and-Fire Neurons.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720400032

By:

Brigner, Wesley H.;
Hu, Xuan;
Hassan, Naimul;
Jiang-Wei, Lucian;
Bennett, Christopher H.;
Garcia-Sanchez, Felipe;
Akinola, Otitoaleke;
Pasquale, Massimo;
Marinella, Matthew J.;
Incorvia, Jean Anne C.;
Friedman, Joseph S.

Publication type:

Article

Reliability Analysis and Performance Evaluation of STT-MRAM-Based Physical Unclonable Function.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720400020

By:

Wang, You;
Wang, Hanchen;
Zhao, Weisheng;
Cai, Hao

Publication type:

Article

A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM.

Published in:

SPIN (2010-3247), 2020, v. 10, n. 2, p. N.PAG, doi. 10.1142/S2010324720400019

By:

Zhang, Li;
Tang, Hualian;
Xu, Beilei;
Zhuang, Yiqi;
Bao, Junlin

Publication type:

Article

Guest Editorial: SPIN Special Section on Spintronics for In-Memory Processing.

Published in:

2020

By:

Kang, Wang;
Zhang, Yue;
Zhao, Weisheng

Publication type:

Editorial

Works matching IS 20103247 AND DT 2020 AND VI 10 AND IP 2

Effects of Si Doping on the Structural, Electronic and Optical Properties of Barium Chalcogenide BaS: A First-Principles Study.

Electronic Structure and Ferromagnetic Properties of Doped Calcium Sulfide Ca1−xTM<sub>x</sub>S (TM = V, Cr and Co).

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field.

Theoretical Prediction of the Structural, Elastic, Electronic and Thermodynamic Properties of Binary CoP<sub>3</sub> and Ternary FeCoP<sub>3</sub> Skutterudites Materials.

High Spin Polarization and Thermoelectric Efficiency of Half-Metallic Ferromagnetic CrYSn (Y=Ca, Sr) of Half-Heusler Compounds.

Approximate 5-2 Compressor Cell Using Spin-Based Majority Gates.

Three Artificial Spintronic Leaky Integrate-and-Fire Neurons.

Reliability Analysis and Performance Evaluation of STT-MRAM-Based Physical Unclonable Function.

A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM.

Guest Editorial: SPIN Special Section on Spintronics for In-Memory Processing.