Title: TEMPERATURE-DEPENDENT MODIFICATIONS OF Ag/SiO<sub>2</sub>/p-Si SCHOTTKY CONTACTS FORMED AT 20 K.
Authors: ALI, A.; YASAR, M.; NASIM, F.; BHATTI, A. S.
Abstract: The Schottky contacts of Ag/SiO2/p-Si were fabricated by thermal evaporation at 20 K. The effect of annealing temperatures varying from 373 to 773 K on the morphology and electrical properties of these contacts was investigated. The average grain size increased while the density of grains decreased with increasing temperature. Ideality factor initially observed was as high as 4.15 with a low barrier height of 0.04 eV for contact grown at 20 K. Annealing resulted in shift of ideality factor and barrier height towards ideal behavior. Thus, it is demonstrated that Ag/SiO2/p-Si contacts grown at low temperature can be modified by annealing.
Subjects: ELECTRIC contacts; TEMPERATURE effect; SILICA; SILVER; MICROFABRICATION; THERMAL analysis; EVAPORATION (Chemistry); ANNEALING of crystals
Publication: International Journal of Nanoscience, 2010, Vol 9, Issue 3, p135
ISSN: 0219-581X
Publication type: Academic Journal
DOI: 10.1142/S0219581X10006740

TEMPERATURE-DEPENDENT MODIFICATIONS OF Ag/SiO<sub>2</sub>/p-Si SCHOTTKY CONTACTS FORMED AT 20 K.

ALI, A.; YASAR, M.; NASIM, F.; BHATTI, A. S.