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- Title
TEMPERATURE-DEPENDENT MODIFICATIONS OF Ag/SiO<sub>2</sub>/p-Si SCHOTTKY CONTACTS FORMED AT 20 K.
- Authors
ALI, A.; YASAR, M.; NASIM, F.; BHATTI, A. S.
- Abstract
The Schottky contacts of Ag/SiO2/p-Si were fabricated by thermal evaporation at 20 K. The effect of annealing temperatures varying from 373 to 773 K on the morphology and electrical properties of these contacts was investigated. The average grain size increased while the density of grains decreased with increasing temperature. Ideality factor initially observed was as high as 4.15 with a low barrier height of 0.04 eV for contact grown at 20 K. Annealing resulted in shift of ideality factor and barrier height towards ideal behavior. Thus, it is demonstrated that Ag/SiO2/p-Si contacts grown at low temperature can be modified by annealing.
- Subjects
ELECTRIC contacts; TEMPERATURE effect; SILICA; SILVER; MICROFABRICATION; THERMAL analysis; EVAPORATION (Chemistry); ANNEALING of crystals
- Publication
International Journal of Nanoscience, 2010, Vol 9, Issue 3, p135
- ISSN
0219-581X
- Publication type
Academic Journal
- DOI
10.1142/S0219581X10006740