Works matching DE "INDIUM arsenide"
Results: 329
A 2D photonic crystal indium arsenide based with dual micro-cavities coupled to a waveguide as a platform for a high sensitivity pressure sensor.
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- Optical & Quantum Electronics, 2023, v. 55, n. 3, p. 1, doi. 10.1007/s11082-022-04533-7
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- Article
A proposal for a Giga Pascal pressure sensor using one dimensional photonic waveguide at 850 /1310/1550 nm signal.
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- Optical & Quantum Electronics, 2023, v. 55, n. 1, p. 1, doi. 10.1007/s11082-022-04182-w
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- Article
Optical Retardation based on Tunneling-Induced Transparency in Quantum Dot Slow light Devices.
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- Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03909-z
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- Article
Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses.
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- Optical & Quantum Electronics, 2018, v. 50, n. 6, p. 1, doi. 10.1007/s11082-018-1528-7
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- Article
Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots.
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- Optical & Quantum Electronics, 2017, v. 49, n. 4, p. 1, doi. 10.1007/s11082-017-0975-x
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- Article
Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells.
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- Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-017-0891-0
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- Article
Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes.
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- Optical & Quantum Electronics, 2015, v. 47, n. 7, p. 1671, doi. 10.1007/s11082-014-0024-y
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- Article
Mid-wavelength focal plane arrays infrared detector based on type-II InAs/GaSb superlattice.
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- Optical & Quantum Electronics, 2015, v. 47, n. 7, p. 1731, doi. 10.1007/s11082-014-0030-0
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- Article
Simulations of mid infrared emission of InAsN semiconductors.
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- Optical & Quantum Electronics, 2015, v. 47, n. 4, p. 829, doi. 10.1007/s11082-014-0002-4
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- Article
InAs-based quantum cascade lasers emitting close to 25 μm.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 3, p. 144, doi. 10.1049/el.2018.6413
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- Article
InAs/GaAs quantum dot infrared hotodetectors on on-axis i (100) substrates.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 24, p. 1395, doi. 10.1049/el.2018.7118
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- Article
High-Q nanocavities in semiconductor-based three-dimensional photonic crystals.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 5, p. 305, doi. 10.1049/el.2017.4542
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- Article
Polarization, spectral, and spatial emission characteristics of chiral semiconductor nanostructures.
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- JETP Letters, 2017, v. 106, n. 10, p. 643, doi. 10.1134/S002136401722012X
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- Article
Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor.
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- JETP Letters, 2017, v. 105, n. 8, p. 508, doi. 10.1134/S0021364017080057
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- Article
Phonon assisted resonant tunneling and its phonons control.
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- JETP Letters, 2016, v. 104, n. 6, p. 392, doi. 10.1134/S0021364016180016
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- Article
Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion.
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- JETP Letters, 2016, v. 104, n. 1, p. 26, doi. 10.1134/S0021364016130014
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- Article
Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy.
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- JETP Letters, 2015, v. 101, n. 9, p. 628, doi. 10.1134/S0021364015090143
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- Article
Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy.
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- JETP Letters, 2014, v. 100, n. 3, p. 156, doi. 10.1134/S0021364014150144
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- Article
Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures.
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- JETP Letters, 2014, v. 100, n. 1, p. 32, doi. 10.1134/S0021364014130128
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- Article
Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface.
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- JETP Letters, 2014, v. 98, n. 10, p. 614, doi. 10.1134/S0021364013230033
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- Article
Fine structure of the exciton states in InAs quantum dots.
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- JETP Letters, 2013, v. 97, n. 5, p. 274, doi. 10.1134/S0021364013050056
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- Article
Topological quantization of current in quantum tunnel contacts.
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- JETP Letters, 2006, v. 83, n. 12, p. 563, doi. 10.1134/S0021364006120083
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- Article
Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2019, v. 9, n. 4, p. 2902, doi. 10.11591/ijece.v9i4.pp2902-2909
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- Article
A FIRST PRINCIPLE STUDY OF ELECTRONIC AND STRUCTURAL PROPERTIES OF INDIUM ARSENIDE(INAS).
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- Bulletin of Pure & Applied Sciences-Physics, 2013, v. 32D, n. 2, p. 1
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- Article
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces.
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- Nanoscale Research Letters, 2013, n. 6, p. 1, doi. 10.1186/1556-276X-8-298
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- Article
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.
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- Nanoscale Research Letters, 2013, v. 8, n. 2, p. 1, doi. 10.1186/1556-276X-8-86
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- Article
Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1901, doi. 10.1007/s11671-010-9754-3
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- Article
Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1892, doi. 10.1007/s11671-010-9747-2
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- Article
Eighth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
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- 2010
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- Publication type:
- Editorial
Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1930, doi. 10.1007/s11671-010-9802-z
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- Article
Ellipsoidal InAs Quantum Dots.
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- Nanoscale Research Letters, 2009, v. 4, n. 10, p. 1256, doi. 10.1007/s11671-009-9371-1
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- Article
Quantum dots: Superior single photons.
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- Nature Photonics, 2012, v. 6, n. 5, p. 268, doi. 10.1038/nphoton.2012.94
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- Article
Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.
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- Semiconductors, 2024, v. 58, n. 5, p. 445, doi. 10.1134/S1063782624050129
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- Article
Gettering of Epitaxial Indium Arsenide by the Rare Earth Element Holmium.
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- Semiconductors, 2023, v. 57, n. 3, p. 160, doi. 10.1134/S1063782623060118
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- Article
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.
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- Semiconductors, 2018, v. 52, n. 11, p. 1484, doi. 10.1134/S1063782618110039
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- Article
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.
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- Semiconductors, 2018, v. 52, n. 9, p. 1129, doi. 10.1134/S1063782618090129
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- Article
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW.
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- Semiconductors, 2018, v. 52, n. 8, p. 1037, doi. 10.1134/S1063782618080146
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- Article
Material mix.
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- Nature Physics, 2013, v. 9, n. 12, p. 753, doi. 10.1038/nphys2836
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- Article
Quantum dots: To the source of the noise.
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- Nature Physics, 2013, v. 9, n. 9, p. 538, doi. 10.1038/nphys2721
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- Article
Interface influence on structural properties of InAs/GaSb type-II superlattices.
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- Optica Applicata, 2009, v. 39, n. 4, p. 875
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- Article
Magnetic field sensors based on undoped In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition.
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- Optica Applicata, 2005, v. 35, n. 3, p. 627
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- Article
Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer.
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- Optica Applicata, 2005, v. 35, n. 3, p. 471
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- Article
Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.
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- Optica Applicata, 2005, v. 35, n. 3, p. 457
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- Article
Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band.
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- Optica Applicata, 2005, v. 35, n. 3, p. 399
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- Article
POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319
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- Article
FORMATION OF SEMICONDUCTOR QUANTUM DOTS IN THE SUBCRITICAL THICKNESS RANGE.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 339, doi. 10.1142/S0219581X07004900
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- Article
GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 383, doi. 10.1142/S0219581X07004912
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- Article
OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS.
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- International Journal of Nanoscience, 2006, v. 5, n. 6, p. 721, doi. 10.1142/S0219581X06005054
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- Article
LATERAL INTERSUBBAND PHOTOCURRENT STUDY ON InAs/InAlAs/InP SELF-ASSEMBLED NANOSTRUCTURES.
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- International Journal of Nanoscience, 2006, v. 5, n. 6, p. 729, doi. 10.1142/S0219581X06005066
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- Article
SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS.
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- International Journal of Nanoscience, 2006, v. 5, n. 6, p. 883, doi. 10.1142/S0219581X06005315
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- Article