Works matching IS 0219581X AND DT 2004 AND VI 3 AND IP 1/2

Results: 27

APPLICATION OF SUPERCRITICAL FLUIDS FOR FABRICATION OF FREE-STANDING NANOOBJECTS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 1, doi. 10.1142/S0219581X04001444

By:

Chehovskiy, A. V.;
Prinz, V. Ya.

Publication type:

Article

KINETICS OF ATOMIC SURFACE TRANSFORMATION DURING STRANSKI–KRASTANOW GROWTH MODE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 9, doi. 10.1142/S0219581X04001456

By:

Brunev, D. V.;
Karpov, A. N.;
Neizvestny, I. G.;
Shwartz, N. L.;
Yanovitskaya, Z. Sh.

Publication type:

Article

MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 19, doi. 10.1142/S0219581X04001778

By:

Dvurechenskii, A. V.;
Smagina, J. V.;
Zinovyev, V. A.;
Teys, S. A.;
Gutakovskii, A. K.;
Groetzschel, R.

Publication type:

Article

NOVEL SPINTRONIC MATERIALS BASED ON FERROMAGNETIC SEMICONDUCTOR CHALCOPYRITES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 39, doi. 10.1142/S0219581X04001791

By:

Medvedkin, G. A.;
Goloshchapov, S. I.;
Voevodin, V. G.;
Sato, K.;
Ishibashi, T.;
Mitani, S.;
Takanashi, K.;
Fujimori, A.;
Ishida, Y.;
Okabayashi, J.;
Sarma, D. D.;
Akai, H.;
Kamatani, T.

Publication type:

Article

SECOND NEAREST NEIGHBORS INTERACTION AND EQUILIBRIUM SHAPE OF STEPS ON KOSSEL CRYSTAL VICINAL SURFACE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 29, doi. 10.1142/S0219581X0400178X

By:

Korsakov, V. B.;
Suris, R. A.

Publication type:

Article

MAGNETIC EPITAXIAL NANOSTRUCTURES FROM IRON AND NICKEL.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 51, doi. 10.1142/S0219581X04001808

By:

Malikov, I. V.;
Fomin, L. A.;
Vinnichenko, V. Yu.;
Mikhailov, G. M.

Publication type:

Article

NANOSCALE PERIODICAL STRUCTURES FABRICATED BY INTERFERENCE PHOTOLITHOGRAPHY.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 59, doi. 10.1142/S0219581X0400181X

By:

Nesterov, S. I.;
Myagkov, D. V.;
Portnoi, E. L.

Publication type:

Article

SCANNING E-BEAM LONGITUDINALLY PUMPED RT OPERABLE LASER BASED ON MOVPE-GROWN GaInP/AlGaInP MQW STRUCTURE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 193, doi. 10.1142/S0219581X04001985

By:

Bondarev, V. Yu.;
Kozlovsky, V. I.;
Krysa, A. B.;
Roberts, J. S.;
Skasyrsky, Ya. K.

Publication type:

Article

BEHAVIOR OF ELECTRON STATES IN GaAs/AlGaAs DOUBLE QUANTUM WELL STRUCTURE WITH STRONGLY ASYMMETRIC BARRIERS IN AN EXTERNAL ELECTRIC FIELD.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 203, doi. 10.1142/S0219581X04001997

By:

Aleshchenko, Yu. A.;
Kapaev, V. V.;
Kopaev, Yu. V.;
Kopev, P. S.;
Ustinov, V. M.;
Zhukov, A. E.

Publication type:

Article

ORGANIZED PLANAR NANOSTRUCTURES VIA INTERFACIAL SELF-ASSEMBLY AND DNA TEMPLATING.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 65, doi. 10.1142/S0219581X04001821

By:

Khomutov, G. B.;
Antipina, M. N.;
Sergeev-Cherenkov, A. N.;
Rakhnyanskaya, A. A.;
Artemyev, M.;
Kisiel, D.;
Gainutdinov, R. V.;
Tolstikhina, A. L.;
Kislov, V. V.

Publication type:

Article

SNOM INVESTIGATION OF THE ELECTROMAGNETIC FIELD INTENSITY AND POLARIZATION DISTRIBUTION IN THE VICINITY OF NANOSTRUCTURES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 105, doi. 10.1142/S0219581X04001870

By:

Bashevoy, M. V.;
Ezhov, A. A.;
Magnitskii, S. A.;
Muzychenko, D. A.;
Panov, V. I.;
Toursynov, J. S.;
Malakhov, D. V.

Publication type:

Article

METALLIC AND SEMICONDUCTOR HALL MICROPROBES FOR WIDE TEMPERATURE RANGE APPLICATIONS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 123, doi. 10.1142/S0219581X04001894

By:

Novoselov, Kostya S.;
Morozov, Sergey V.;
Dubonos, Sergey V.;
Missous, M.;
Geim, A. K.

Publication type:

Article

NANOPATTERNING OF SILICON-BASED NANOSTRUCTURES BY AFM PROBE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 75, doi. 10.1142/S0219581X04001833

By:

Sheglov, D. V.;
Nastaushev, Yu. V.;
Latyshev, A. V.;
Aseev, A. L.

Publication type:

Article

TWO-DIMENSIONAL ORDERED POROUS STRUCTURES FOR PHOTONIC CRYSTALS OBTAINED USING DEEP ANODIC ETCHING AND FOCUSED ION BEAM TECHNIQUES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 81, doi. 10.1142/S0219581X04001845

By:

Gavrilin, E. Yu.;
Gorbatov, Yu. B.;
Starkov, V. V.;
Vyatkin, A. F.

Publication type:

Article

LOCAL ELECTRONIC STRUCTURE OF N ATOMS IN Ga(In)AsN BY SOFT-X-RAY ABSORPTION AND EMISSION:: OPTICAL EFFICIENCY.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 95, doi. 10.1142/S0219581X04001869

By:

Strocov, V. N.;
Nilsson, P. O.;
Schmitt, T.;
Claessen, R.;
Egorov, A. Yu.;
Ustinov, V. M.;
Alferov, Zh. I.

Publication type:

Article

COERCIVITY OF SINGLE PINNING CENTER MEASURED BY HALL MICROMAGNETOMETRY.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 87, doi. 10.1142/S0219581X04001857

By:

Novoselov, Kostya S.;
Dubonos, Sergey V.;
Morozov, Sergey V.;
Van Den Bergen, Dirk;
Maan, Jan Kees;
Geim, A. K.

Publication type:

Article

E-BEAM PUMPED VCSEL ON MOVPE-GROWN HEXAGONAL CdSSe/CdS MQW STRUCTURE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 213, doi. 10.1142/S0219581X04002000

By:

Kozlovsky, V. I.;
Bondarev, V. Yu.;
Sannikov, D. A.;
Kuznetsov, P. I.;
Yakushcheva, G. G.;
O'Donnell, K. P.;
Trager-Cowan, C.

Publication type:

Article

DEPTH DEPENDENCE OF MAGNETIC AND ELECTRIC PROPERTIES IN GaMnAs LAYERS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 115, doi. 10.1142/S0219581X04001882

By:

Koeder, A.;
Frank, S.;
Limmer, W.;
Schoch, W.;
Avrutin, V.;
Sauer, R.;
Waag, A.;
Peiner, E.;
Schlachetzki, A.

Publication type:

Article

ELECTRONICS OF MOLECULAR NANOCLUSTERS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 137, doi. 10.1142/S0219581X04001912

By:

Kislov, V. V.;
Gulyaev, Yu. V.;
Kolesov, V. V.;
Taranov, I. V.;
Gubin, S. P.;
Khomutov, G. B.;
Soldatov, E. S.;
Maximov, I. A.;
Samuelson, L.

Publication type:

Article

NANOSWITCH BASED ON NANOTUBES:: BENT-NANOTUBES TRANSPORT.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 131, doi. 10.1142/S0219581X04001900

By:

Farajian, A. A.;
Yakobson, B. I.;
Mizuseki, H.;
Kawazoe, Y.

Publication type:

Article

EXTRAORDINARY HALL EFFECT IN ULTRA-THIN Fe–Pt FILMS AND FABRICATION OF NANOMICRO HALL DEVICES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 149, doi. 10.1142/S0219581X04001924

By:

Matveev, V. N.;
Berezin, V. A.;
Volkov, V. T.;
Firsov, A. A.;
Kononenko, O. V.;
Levashov, V. I.

Publication type:

Article

FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 155, doi. 10.1142/S0219581X04001936

By:

Nastaushev, Yu. V.;
Gavrilova, T. A.;
Kachanova, M. M.;
Naumova, O. V.;
Antonova, I. V.;
Popov, V. P.;
Litvin, L. V.;
Sheglov, D. V.;
Latyshev, A. V.;
Aseev, A. L.

Publication type:

Article

FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 161, doi. 10.1142/S0219581X04001948

By:

Rotkin, Slava V.;
Ruda, Harry E.;
Shik, Alexander

Publication type:

Article

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 171, doi. 10.1142/S0219581X0400195X

By:

Kolodzey, J.;
Adam, T. N.;
Troeger, R. T.;
LV, P.-C.;
Ray, S. K.;
Yassievich, I.;
Odnoblyudov, M.;
Kagan, M.

Publication type:

Article

ON A SUPERLATTICE BLOCH OSCILLATOR.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 177, doi. 10.1142/S0219581X04001961

By:

Romanov, Y. A.;
Romanova, J. Y.

Publication type:

Article

HIGH-PERFORMANCE RIDGE-WAVEGUIDE MULTI-STACK (N=2, 5 AND 10)InAs/InGaAs/GaAs QUANTUM DOT LASERS of 1.3 μm RANGE.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 187, doi. 10.1142/S0219581X04001973

By:

Lin, G.;
Chen, I. F.;
Lay, F. J.;
Chi, J. Y.;
Livshits, D. A.;
Kovsh, A. R.;
Ustinov, V. M.

Publication type:

Article

CALENDAR OF EVENTS.

Published in:: International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 223, doi. 10.1142/S0219581X04002012
Publication type:: Article