Works matching DE "SEMICONDUCTOR junctions"
Results: 762
Controllable Switching between Highly Rectifying Schottky and p–n Junctions in an Ionic MoS<sub>2</sub> Device.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 30, p. 1, doi. 10.1002/adfm.202301010
- By:
- Publication type:
- Article
Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 28, p. 1, doi. 10.1002/adfm.202202524
- By:
- Publication type:
- Article
Ferroelectric Photovoltaic Materials and Devices.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202109625
- By:
- Publication type:
- Article
Improving Ideality of P‐Type Organic Field‐Effect Transistors via Preventing Undesired Minority Carrier Injection.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 19, p. 1, doi. 10.1002/adfm.202100202
- By:
- Publication type:
- Article
Understanding Photocapacitive and Photofaradaic Processes in Organic Semiconductor Photoelectrodes for Optobioelectronics.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 16, p. 1, doi. 10.1002/adfm.202010116
- By:
- Publication type:
- Article
The Interlayer Method: A Universal Tool for Energy Level Alignment Tuning at Inorganic/Organic Semiconductor Heterojunctions.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 10, p. 1, doi. 10.1002/adfm.202010174
- By:
- Publication type:
- Article
Interfacial Modulation with Aluminum Oxide for Efficient Plasmon‐Induced Water Oxidation.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 6, p. 1, doi. 10.1002/adfm.202005688
- By:
- Publication type:
- Article
Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 35, p. 1, doi. 10.1002/adfm.202002979
- By:
- Publication type:
- Article
High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 11, p. 1, doi. 10.1002/adfm.201909501
- By:
- Publication type:
- Article
(Photo)electrocatalytic Versus Heterogeneous Photocatalytic Carbon Dioxide Reduction.
- Published in:
- ChemPhotoChem, 2021, v. 5, n. 9, p. 767, doi. 10.1002/cptc.202100030
- By:
- Publication type:
- Article
Exact Analytical Solution of the Diode Ideality Factor of a pn Junction Device Using Lambert W-function Model.
- Published in:
- Turkish Journal of Physics, 2007, v. 31, n. 1, p. 7
- By:
- Publication type:
- Article
Largely‐Tuned Effective Work‐Function of Al/Graphene/SiO<sub>2</sub>/Si Junction with Electric Dipole Layer at Al/Graphene Interface.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400139
- By:
- Publication type:
- Article
Uniform Tendency of Surface Dipoles Across Silicon Doping Levels and Types of H‐Terminated Surfaces.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 10, p. 1, doi. 10.1002/aelm.202300873
- By:
- Publication type:
- Article
Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 7, p. 1, doi. 10.1002/aelm.202300881
- By:
- Publication type:
- Article
High Performance Solution Processed n‐Type OTFTs through Surface Engineered F–F Interactions Using Asymmetric Silicon Phthalocyanines.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200696
- By:
- Publication type:
- Article
Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe<sub>4</sub>/MoS<sub>2</sub> Van Der Waals Schottky Diode.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551
- By:
- Publication type:
- Article
Electrode Engineering in MoS<sub>2</sub> MOSFET: Different Semiconductor/Metal Interfaces.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513
- By:
- Publication type:
- Article
Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101349
- By:
- Publication type:
- Article
Reconfigurable InSe Electronics with van der Waals Integration.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176
- By:
- Publication type:
- Article
High Electrical Anisotropic Multilayered Self‐Assembled Organic Films Based on Graphene Oxide and PEDOT:PSS.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100255
- By:
- Publication type:
- Article
Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000872
- By:
- Publication type:
- Article
Interface Modification in Three‐Terminal Organic Memory and Synaptic Device.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000641
- By:
- Publication type:
- Article
Features of current flow in structures based on Au/Ti/ n-InAlAs Schottky barriers.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 6, p. 581, doi. 10.1134/S1063785017060177
- By:
- Publication type:
- Article
The forming process in resistive-memory elements based on metal-insulator-semiconductor structures.
- Published in:
- Technical Physics Letters, 2014, v. 40, n. 10, p. 837, doi. 10.1134/S1063785014100137
- By:
- Publication type:
- Article
Gain of parabolic mesh reflector antennas with arbitrary depths.
- Published in:
- Technical Physics Letters, 2013, v. 39, n. 2, p. 213, doi. 10.1134/S1063785013020156
- By:
- Publication type:
- Article
On the accuracy of quantitative measurements of the local surface potential.
- Published in:
- Technical Physics Letters, 2010, v. 36, n. 3, p. 228, doi. 10.1134/S1063785010030090
- By:
- Publication type:
- Article
Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters.
- Published in:
- Technical Physics Letters, 2010, v. 36, n. 1, p. 26, doi. 10.1134/S1063785010010098
- By:
- Publication type:
- Article
Ultrasonic treatment-induced modification of the electrical properties of InAs p-n junctions.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 6, p. 514, doi. 10.1134/S1063785009060108
- By:
- Publication type:
- Article
Quantum interference filters based on oxide superconductor junctions for microwave applications.
- Published in:
- Technical Physics Letters, 2007, v. 33, n. 3, p. 192, doi. 10.1134/S1063785007030030
- By:
- Publication type:
- Article
Electrical Characteristics of (p)3C-SiC–(n)6H-SiC Heterojunctions.
- Published in:
- Technical Physics Letters, 2002, v. 28, n. 9, p. 792, doi. 10.1134/1.1511788
- By:
- Publication type:
- Article
Nondestructive Diagnostics of Microchannel (Macroporous) Silicon by X-ray Topography.
- Published in:
- Technical Physics Letters, 2000, v. 26, n. 12, p. 1087, doi. 10.1134/1.1337262
- By:
- Publication type:
- Article
Photoelectric Properties of the n-SnSSe–p-InSe Heterojunctions.
- Published in:
- Technical Physics Letters, 2000, v. 26, n. 9, p. 754, doi. 10.1134/1.1315484
- By:
- Publication type:
- Article
p-GaSe-n-Recrystallized InSe Heterojunctions.
- Published in:
- Technical Physics Letters, 2000, v. 26, n. 1, p. 54, doi. 10.1134/1.1262739
- By:
- Publication type:
- Article
Influence of self-oxide formation regimes on the properties of oxide–p-InSe heterojunctions.
- Published in:
- Technical Physics Letters, 1999, v. 25, n. 7, p. 520, doi. 10.1134/1.1262539
- By:
- Publication type:
- Article
Dosimeter for real-time monitoring of nuclear radiation energy (dose) using a metal–gas-insulator–semiconductor structure.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 11, p. 893, doi. 10.1134/1.1262306
- By:
- Publication type:
- Article
On the degree to which the wide-gap part of a p–n heterojunction influences the breakdown field and the carrier multiplication coefficients.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 9, p. 668, doi. 10.1134/1.1262239
- By:
- Publication type:
- Article
Time evolution of three-crystal x-ray spectra during fluorination of a Pt/LaF[sub 3]/Si structure.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 7, p. 554, doi. 10.1134/1.1262192
- By:
- Publication type:
- Article
Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 3, p. 186, doi. 10.1134/1.1262046
- By:
- Publication type:
- Article
Influence of an auxiliary planar short-circuited p-n junction positioned near a main junction.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 3, p. 237, doi. 10.1134/1.1262068
- By:
- Publication type:
- Article
p-GaSe–n-Ga[sub 2]S[sub 3] heterojunctions.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 5, p. 385, doi. 10.1134/1.1261689
- By:
- Publication type:
- Article
New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 3, p. 233
- By:
- Publication type:
- Article
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 2, p. 149, doi. 10.1134/1.1261567
- By:
- Publication type:
- Article
Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 2, p. 151, doi. 10.1134/1.1261568
- By:
- Publication type:
- Article
Circularly Polarized Electroluminescence of InGaAs/GaAs/CoPt Spin Light Emitting Diodes Placed in a Strong and Weak Magnetic Field.
- Published in:
- Technical Physics, 2023, v. 68, p. S418, doi. 10.1134/S1063784223900607
- By:
- Publication type:
- Article
The Effects of the Welding Parameters on Tensile Properties of RSW Junctions of DP1000 Sheet Steel.
- Published in:
- Engineering, Technology & Applied Science Research, 2018, v. 8, n. 4, p. 3116, doi. 10.48084/etasr.2115
- By:
- Publication type:
- Article
Predicting band offset of lattice matched ZnO and BeCdO heterojunction from first principles.
- Published in:
- Materials Research Letters, 2019, v. 7, n. 6, p. 232, doi. 10.1080/21663831.2019.1593253
- By:
- Publication type:
- Article
BiPO 4 /Ov-BiOBr High-Low Junctions for Efficient Visible Light Photocatalytic Performance for Tetracycline Degradation and H 2 O 2 Production.
- Published in:
- Catalysts (2073-4344), 2023, v. 13, n. 3, p. 634, doi. 10.3390/catal13030634
- By:
- Publication type:
- Article
Construction of Multi-Defective ZnMn 2 O 4 /Carbon Nitride Three-Dimensional System for Highly Efficient Photocatalytic Sulfamethoxazole Degradation.
- Published in:
- Catalysts (2073-4344), 2023, v. 13, n. 1, p. 172, doi. 10.3390/catal13010172
- By:
- Publication type:
- Article
A Review of Recent Developments in Molecular Dynamics Simulations of the Photoelectrochemical Water Splitting Process.
- Published in:
- Catalysts (2073-4344), 2021, v. 11, n. 7, p. 807, doi. 10.3390/catal11070807
- By:
- Publication type:
- Article
An optical and electrical relaxation oscillator using a Si homojunction structured light emitting diode.
- Published in:
- Applied Physics B: Lasers & Optics, 2012, v. 108, n. 1, p. 25, doi. 10.1007/s00340-012-5100-z
- By:
- Publication type:
- Article