Works matching DE "METAL oxide semiconductor field-effect transistors"
Results: 2483
β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD.
- Published in:
- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 312, doi. 10.16553/j.cnki.issn1000-985x.2024.0284
- By:
- Publication type:
- Article
Research Progress of Ultra-Wide Bandgap β-Ga<sub>2</sub>O<sub>3</sub> Power Devices on Novel Structures and Electro-Thermal Characteristics.
- Published in:
- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 263, doi. 10.16553/j.cnki.issn1000-985x.2024.0265
- By:
- Publication type:
- Article
A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 771, doi. 10.3390/electronics14040771
- By:
- Publication type:
- Article
Experimental Study of the Comparison of the Synergistic Effect of Total Ionizing Dose and Neutron Single Event on Si/SiC MOSFETs.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 763, doi. 10.3390/electronics14040763
- By:
- Publication type:
- Article
High-Efficiency, Low-Loss, and Wideband 5.8 GHz Energy Harvester Designed Using TSMC 65 nm Process for IoT Self-Powered Nodes.
- Published in:
- Energies (19961073), 2025, v. 18, n. 4, p. 862, doi. 10.3390/en18040862
- By:
- Publication type:
- Article
Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter.
- Published in:
- Micromachines, 2025, v. 16, n. 2, p. 223, doi. 10.3390/mi16020223
- By:
- Publication type:
- Article
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures.
- Published in:
- Micromachines, 2025, v. 16, n. 2, p. 221, doi. 10.3390/mi16020221
- By:
- Publication type:
- Article
Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure.
- Published in:
- Micromachines, 2025, v. 16, n. 2, p. 198, doi. 10.3390/mi16020198
- By:
- Publication type:
- Article
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
- Published in:
- Micromachines, 2025, v. 16, n. 2, p. 197, doi. 10.3390/mi16020197
- By:
- Publication type:
- Article
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations.
- Published in:
- Micromachines, 2025, v. 16, n. 2, p. 188, doi. 10.3390/mi16020188
- By:
- Publication type:
- Article
Low-power, high-performance SOI CMOS.
- Published in:
- Solid State Technology, 2001, v. 44, n. 11, p. 63
- By:
- Publication type:
- Article
Low-energy plasma-enhanced CVD facilities high mobility SiGe.
- Published in:
- Solid State Technology, 2000, v. 43, n. 12, p. 30
- By:
- Publication type:
- Article
Gd oxide may bring better GaAs, more talk.
- Published in:
- Solid State Technology, 1999, v. 42, n. 6, p. 28
- By:
- Publication type:
- Article
Double-gate MOSFET demonstrates 25-nm thick channel.
- Published in:
- Solid State Technology, 1998, v. 41, n. 3, p. 24
- By:
- Publication type:
- Article
2D Nanosheets and Their Composite Membranes for Water, Gas, and Ion Separation.
- Published in:
- Angewandte Chemie, 2019, v. 131, n. 49, p. 17674, doi. 10.1002/ange.201814349
- By:
- Publication type:
- Article
Biodegradable Thin Metal Foils and Spin-On Glass Materials for Transient Electronics.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 12, p. 1789, doi. 10.1002/adfm.201403469
- By:
- Publication type:
- Article
Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 41, p. 6503, doi. 10.1002/adfm.201401438
- By:
- Publication type:
- Article
Dissolvable Metals for Transient Electronics.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 5, p. 645, doi. 10.1002/adfm.201301847
- By:
- Publication type:
- Article
Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 5, p. 695, doi. 10.1002/adfm.201302070
- By:
- Publication type:
- Article
Reduction of drain induced barrier lowering by optimization Trimetal- GAA -Si -NW MOSFET in multimedia tools.
- Published in:
- Multimedia Tools & Applications, 2022, v. 81, n. 14, p. 19849, doi. 10.1007/s11042-021-11518-3
- By:
- Publication type:
- Article
Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 21, p. 7417, doi. 10.1007/s10853-012-6425-z
- By:
- Publication type:
- Article
Recent progress in ab initio simulations of hafnia-based gate stacks.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 21, p. 7399, doi. 10.1007/s10853-012-6568-y
- By:
- Publication type:
- Article
Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures.
- Published in:
- Journal of Materials Science, 2011, v. 46, n. 12, p. 4157, doi. 10.1007/s10853-011-5248-7
- By:
- Publication type:
- Article
Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor.
- Published in:
- Journal of Materials Science, 2010, v. 45, n. 20, p. 5478, doi. 10.1007/s10853-010-4603-4
- By:
- Publication type:
- Article
Properties of Ta-Mo alloy gate electrode forn-MOSFET.
- Published in:
- 2005
- By:
- Publication type:
- Letter
Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope.
- Published in:
- Journal of Raman Spectroscopy, 2024, v. 55, n. 9, p. 982, doi. 10.1002/jrs.6685
- By:
- Publication type:
- Article
On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures.
- Published in:
- Fluctuation & Noise Letters, 2023, v. 22, n. 6, p. 1, doi. 10.1142/S0219477523500451
- By:
- Publication type:
- Article
Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2020, v. 19, n. 1, p. N.PAG, doi. 10.1142/S0219477520500029
- By:
- Publication type:
- Article
Effects of Hot-Carrier Stress on the RF Performance of a 0.18-μm MOS Divide-by-4 LC Injection-Locked Frequency Divider.
- Published in:
- Fluctuation & Noise Letters, 2014, v. 13, n. 2, p. -1, doi. 10.1142/S0219477514500096
- By:
- Publication type:
- Article
1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS.
- Published in:
- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 431, doi. 10.1142/S0219477511000673
- By:
- Publication type:
- Article
COMPARISON OF 1/f NOISE IN JFETs AND MOSFETs WITH SEVERAL FIGURES OF MERIT.
- Published in:
- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 447, doi. 10.1142/S0219477511000685
- By:
- Publication type:
- Article
INSTRUMENTATION DESIGN FOR CROSS-CORRELATION MEASUREMENTS BETWEEN GATE AND DRAIN LOW FREQUENCY NOISE IN MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2010, v. 9, n. 3, p. 313, doi. 10.1142/S021947751000023X
- By:
- Publication type:
- Article
ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS.
- Published in:
- Fluctuation & Noise Letters, 2008, v. 8, n. 3/4, p. L281, doi. 10.1142/S0219477508005136
- By:
- Publication type:
- Article
MODELING OF NOISE BEHAVIOR OF GRADED BAND GAP CHANNEL MOSFET AT GHz FREQUENCIES.
- Published in:
- Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. L507, doi. 10.1142/S0219477507004185
- By:
- Publication type:
- Article
ON THE ORIGIN OF 1/F NOISE IN MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2007, v. 7, n. 3, p. L321, doi. 10.1142/S0219477507003970
- By:
- Publication type:
- Article
IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S.
- Published in:
- Fluctuation & Noise Letters, 2006, v. 6, n. 4, p. L427, doi. 10.1142/S0219477506003586
- By:
- Publication type:
- Article
GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2005, v. 5, n. 4, p. L539, doi. 10.1142/S0219477505002999
- By:
- Publication type:
- Article
ON THE INFLUENCE OF SPACE-QUANTIZATION EFFECTS ON THE RF NOISE BEHAVIOUR OF DG MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2004, v. 4, n. 4, p. L561, doi. 10.1142/S0219477504002191
- By:
- Publication type:
- Article
A NEW TECHNIQUE FOR EXTRACTING THE MOSFET THRESHOLD VOLTAGE USING NOISE MEASUREMENTS.
- Published in:
- Fluctuation & Noise Letters, 2004, v. 4, n. 4, p. L643, doi. 10.1142/S0219477504002282
- By:
- Publication type:
- Article
1/f<sup>γ</sup> DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L297, doi. 10.1142/S0219477504001902
- By:
- Publication type:
- Article
LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING.
- Published in:
- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L309, doi. 10.1142/S0219477504001914
- By:
- Publication type:
- Article
NOISE ANALYSIS IN A 0.8 V FORWARD BODY-BIAS CMOS OP-AMP DESIGN.
- Published in:
- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L403, doi. 10.1142/S0219477504001975
- By:
- Publication type:
- Article
Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors.
- Published in:
- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. L221, doi. 10.1142/S0219477501000469
- By:
- Publication type:
- Article
Low Frequency Noise in CMOS Transistors: An Experimental and Comparative Study on Different Technologies.
- Published in:
- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. L233, doi. 10.1142/S0219477501000482
- By:
- Publication type:
- Article
Green's Functions Approach to MOS Physics-Based Compact Noise Modelling.
- Published in:
- Fluctuation & Noise Letters, 2001, v. 1, n. 1, p. R51, doi. 10.1142/S0219477501000123
- By:
- Publication type:
- Article
A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03875-9
- By:
- Publication type:
- Article
β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03867-9
- By:
- Publication type:
- Article
Demonstration of MOCVD-grown Ga<sub>2</sub>O<sub>3</sub> power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03858-w
- By:
- Publication type:
- Article
Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03801-z
- By:
- Publication type:
- Article
Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 14, p. 1867, doi. 10.1049/pel2.12744
- By:
- Publication type:
- Article