Found: 13
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Packaged Flexible Planar Copper Foil Fractional-Order '0.61–0.87' Capacitors: Series/Parallel Combinations.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1829, doi. 10.1007/s11664-022-10171-2
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- Article
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03775-y
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- Article
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM).
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- Micromachines, 2021, v. 12, n. 11, p. 1288, doi. 10.3390/mi12111288
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- Article
Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 79, doi. 10.3390/electronics10010079
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- Article
Efficient representation of bit-planes for quantum image processing.
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- Multimedia Tools & Applications, 2024, v. 83, n. 31, p. 75585, doi. 10.1007/s11042-024-18552-x
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- Article
Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator.
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- International Journal of Numerical Modelling, 2021, v. 34, n. 2, p. 1, doi. 10.1002/jnm.2827
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- Article
A Survey on the Application of WirelessHART for Industrial Process Monitoring and Control.
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- Sensors (14248220), 2021, v. 21, n. 15, p. 4951, doi. 10.3390/s21154951
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- Article
Ultra-low-voltage integrable electronic implementation of delayed inertial neural networks for complex dynamical behavior using multiple activation functions.
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- Neural Computing & Applications, 2020, v. 32, n. 12, p. 8297, doi. 10.1007/s00521-019-04322-6
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- Article
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03299-9
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- Article
Modelling for triple gate spin‐FET and design of triple gate spin‐FET‐based binary adder.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 4, p. 464, doi. 10.1049/iet-cds.2019.0329
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- Article
0.65 V integrable electronic realisation of integer‐ and fractional‐order Hindmarsh–Rose neuron model using companding technique.
- Published in:
- IET Circuits, Devices & Systems (Wiley-Blackwell), 2018, v. 12, n. 6, p. 696, doi. 10.1049/iet-cds.2018.5033
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- Article
Realization of Integrable Incommensurate-Fractional-Order-Rössler-System Design Using Operational Transconductance Amplifiers (OTAs) and Its Experimental Verification.
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- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2017, v. 27, n. 5, p. -1, doi. 10.1142/S0218127417500778
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- Article
Realization of Fractional-Order Double-Scroll Chaotic System Using Operational Transconductance Amplifier (OTA).
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- Journal of Circuits, Systems & Computers, 2018, v. 27, n. 1, p. -1, doi. 10.1142/S0218126618500068
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- Article