Works matching DE "METAL oxide semiconductor field-effect transistors"
Results: 2511
Load switches get smart [battery life improvement].
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- Power Engineer, 2006, v. 20, n. 6, p. 42, doi. 10.1049/pe:20060607
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MARS LANDER RECTIFIED.
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- Power Engineer, 2003, v. 17, n. 5, p. 45
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REDUCING DC-DC POWER.
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- Power Engineer, 2003, v. 17, n. 4, p. 41, doi. 10.1049/pe:20030412
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Polar Perturbations in Functional Oxide Heterostructures.
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- Advanced Functional Materials, 2023, v. 33, n. 36, p. 1, doi. 10.1002/adfm.202302261
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Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating.
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- Advanced Functional Materials, 2022, v. 32, n. 49, p. 1, doi. 10.1002/adfm.202208434
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Mixed‐Dimensional van der Waals Engineering for Charge Transfer Enables Wafer‐Level Flexible Electronics.
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- Advanced Functional Materials, 2022, v. 32, n. 36, p. 1, doi. 10.1002/adfm.202205111
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Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe<sub>2</sub> Heterostructures with Enhanced Electronic Performance.
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- Advanced Functional Materials, 2022, v. 32, n. 35, p. 1, doi. 10.1002/adfm.202201673
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Quasi‐Single Crystalline Cuprous Oxide Wafers via Stress‐Assisted Thermal Oxidation for Optoelectronic Devices.
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- Advanced Functional Materials, 2022, v. 32, n. 15, p. 1, doi. 10.1002/adfm.202110505
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Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films.
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- Advanced Functional Materials, 2022, v. 32, n. 11, p. 1, doi. 10.1002/adfm.202104539
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Mixed‐Dimensional MoS<sub>2</sub>/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202110181
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Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors.
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- Advanced Functional Materials, 2022, v. 32, n. 6, p. 1, doi. 10.1002/adfm.202109254
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Design of p‐WSe<sub>2</sub>/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.
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- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202107992
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En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review.
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- Advanced Functional Materials, 2021, v. 31, n. 48, p. 1, doi. 10.1002/adfm.202105506
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Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors.
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- Advanced Functional Materials, 2021, v. 31, n. 47, p. 1, doi. 10.1002/adfm.202105887
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Single‐Component CMOS‐Like Logic using Diketopyrrolopyrrole‐Based Ambipolar Organic Electrochemical Transistors.
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- Advanced Functional Materials, 2021, v. 31, n. 45, p. 1, doi. 10.1002/adfm.202102903
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Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity.
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- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202104174
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Reconfigurable Multifunctional Ambipolar Polymer‐Blend Transistors with Improved Switching‐Off Capability.
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- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202103369
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Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks.
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- Advanced Functional Materials, 2021, v. 31, n. 28, p. 1, doi. 10.1002/adfm.202101951
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High Performance β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Transistors with Large Work Function TMD Gate of NbS<sub>2</sub> and TaS<sub>2</sub>.
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- Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202010303
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Gate‐Controlled Polarity‐Reversible Photodiodes with Ambipolar 2D Semiconductors.
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- Advanced Functional Materials, 2021, v. 31, n. 8, p. 1, doi. 10.1002/adfm.202007559
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Dual‐Gated MoS<sub>2</sub> Memtransistor Crossbar Array.
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- Advanced Functional Materials, 2020, v. 30, n. 45, p. 1, doi. 10.1002/adfm.202003683
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Self‐Formed, Conducting LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Micro‐Membranes.
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- Advanced Functional Materials, 2020, v. 30, n. 45, p. 1, doi. 10.1002/adfm.201909964
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Direct Patterning of Metal Chalcogenide Semiconductor Materials.
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- Advanced Functional Materials, 2020, v. 30, n. 27, p. 1, doi. 10.1002/adfm.202002685
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p‐Doping Methods: Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors (Adv. Funct. Mater. 24/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 24, p. 1, doi. 10.1002/adfm.202070151
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A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation.
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- Advanced Functional Materials, 2019, v. 29, n. 29, p. N.PAG, doi. 10.1002/adfm.201901700
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A Path Beyond Metal and Silicon:Polymer/Nanomaterial Composites for Stretchable Strain Sensors.
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201806306
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Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
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- Advanced Functional Materials, 2019, v. 29, n. 14, p. N.PAG, doi. 10.1002/adfm.201807613
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Essential Effects on the Mobility Extraction Reliability for Organic Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 42, p. N.PAG, doi. 10.1002/adfm.201803907
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Electrical Double‐Slope Nonideality in Organic Field‐Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 17, p. 1, doi. 10.1002/adfm.201707221
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Contact Resistance and Trap Density of Oligoaniline Field-Effect Transistor.
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- Journal of Polymer Research, 2003, v. 10, n. 3, p. 211, doi. 10.1023/A:1026056329995
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A 2.4 GHz Low Power Low Phase-Noise Enhanced FOM VCO for RF Applications Using 180 nm CMOS Technology.
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- Wireless Personal Communications, 2018, v. 101, n. 1, p. 391, doi. 10.1007/s11277-018-5695-4
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Design and Analysis of Tunable Voltage Differencing Inverting Buffered Amplifier (VDIBA) with Enhanced Performance and Its Application in Filters.
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- Wireless Personal Communications, 2018, v. 100, n. 3, p. 877, doi. 10.1007/s11277-018-5355-8
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Holding State Performance Amelioration by Exploitation of NMOS Body Effect in 1T DRAM Cells.
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- Wireless Personal Communications, 2018, v. 99, n. 1, p. 47, doi. 10.1007/s11277-017-5036-z
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An Optimized Regulator with 290 nA Quiescent Current and $$115\,\upmu \hbox {W}$$ Power Consumption for UHF RFID Tags Using TLBO Algorithm.
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- Wireless Personal Communications, 2015, v. 83, n. 3, p. 2177, doi. 10.1007/s11277-015-2507-y
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High Performance Process Variations Aware Technique for Sub-threshold 8T-SRAM Cell.
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- Wireless Personal Communications, 2014, v. 78, n. 1, p. 57, doi. 10.1007/s11277-014-1735-x
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Optical-field-induced current in dielectrics.
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- Nature, 2013, v. 493, n. 7430, p. 70, doi. 10.1038/nature11567
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Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.
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- Nature, 2011, v. 479, n. 7373, p. 310, doi. 10.1038/nature10676
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Design of CMOS Inverter using SNWFET on Nanohub.
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- Journal of Ultra Scientist of Physical Sciences - Section B (Physics, Geology, Nano Technology Engineering, Bio Sciences, Material Science Management), 2018, v. 30, n. 3, p. 195, doi. 10.22147/jusps-A/300304
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Biosignal Amplifiers Based on Low‐Noise Organic Transistors with Printed Electrodes.
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- Advanced Electronic Materials, 2023, v. 9, n. 9, p. 1, doi. 10.1002/aelm.202201279
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Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259
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Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201109
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Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200554
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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201015
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Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200643
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Demonstration of PdSe<sub>2</sub> CMOS Using Same Metal Contact in PdSe<sub>2</sub> n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200485
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Electrode Engineering in MoS<sub>2</sub> MOSFET: Different Semiconductor/Metal Interfaces.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513
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Fluorinated Graphene Contacts and Passivation Layer for MoS<sub>2</sub> Field Effect Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202101370
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Highly Efficient Polarization‐Controlled Electrical Conductance Modulation in a van der Waals Ferroelectric/Semiconductor Heterostructure.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200413
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Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161
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Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101189
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