GIANT MAGNETOIMPEDANCE BEHAVIOR IN MAGNETIC FIELD-DEPOSITED AMORPHOUS FeCuCrVSiB SINGLE AND MULTILAYERED FILMS.

CHEN, WEI-PING; XIAO, SHU-QIN; FENG, SHANG-SHEN; LIU, YI-HUA

The magnetic and magnetoimpedance behavior of FeCuCrVSiB and (F/SiO2)3/Ag/(SiO2/F)3(F = FeCuCrVSiB) soft magnetic amorphous films deposited in a magnetic field have been investigated systematically. The samples were deposited by the RF sputtering with or without a static magnetic field of 900 Oe applied in the film plane. It is found that the magnetic field applied during the deposition process improves the soft magnetic properties of the sample significantly. The coercive force of the sample is about 0.8 Oe, which is much smaller than that deposited without a field. Moreover, remarkable GMI effects were obtained at relatively low frequencies, which contrasts with the samples deposited without field. In the magnetic field-deposited state, the maximum GMI ratios of 21.5% and 19.5% were achieved for the single-layer films in longitudinal and transverse fields at a frequency of 13 MHz, while for the multilayered films, the maximum values of longitudinal and transverse GMI ratios are 45% and 44% at a frequency of 6.81 MHz, respectively. These superior GMI behaviors of the as-deposited films are related to the magnetic field used in the preparation process and the inserted SiO2 layers.

ELECTRIC impedance; MAGNETIC fields; AMORPHOUS substances; MULTILAYERED thin films; SPUTTERING (Physics); RADIO frequency; MAGNETIC properties

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2010, Vol 24, Issue 29, p5711

0217-9792

Academic Journal

10.1142/S0217979210055020