Works matching IS 02179792 AND DT 2002 AND VI 16 AND IP 28/29


Results: 66
    1

    PREFACE.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. N.Pag, doi. 10.1142/S0217979202015042
    By:
    • Ye, Zhizhen;
    • Kasper, E.;
    • Yu, Jinzhong
    Publication type:
    Article
    2

    Organizer and Sponsor.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. N.Pag, doi. 10.1142/S0217979202015728
    Publication type:
    Article
    3
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    Antimony Diffusion in Silicon Gemanium Alloys Under Point Defect Injection.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4195, doi. 10.1142/S0217979202015066
    By:
    • Dan, Aihua;
    • Willoughby, Arthur F. W.;
    • Bonar, Janet M.;
    • McGregor, Barry M.;
    • Dowsett, Mark G.;
    • Morris, Richard J. H.
    Publication type:
    Article
    5
    6

    Laser-Induced Selective Crystallization of A-SiGe Film.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4203, doi. 10.1142/S021797920201508X
    By:
    • Ma, Xiying;
    • Chen, Xuekang;
    • Wu, Gan;
    • Yang, Jianping;
    • Lei, Zhangxu
    Publication type:
    Article
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    Doping and Growth of Thin Si Epilayer and SiGe by UHV/CVD.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4219, doi. 10.1142/S0217979202015121
    By:
    • Huang, Jingyun;
    • Wang, Lei;
    • Zhao, Binghui;
    • Ye, Zhizhen
    Publication type:
    Article
    11
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    Hetero-Growth of (100) Orientated ZnO Films on Silicon by SS-CVD.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4250, doi. 10.1142/S0217979202015194
    By:
    • Lu, Jian-Guo;
    • Ye, Zhi-Zhen;
    • Chen, Han-Hong;
    • Huang, Jing-Yun;
    • Zhao, Bing-Hui
    Publication type:
    Article
    18
    19

    High Growth-Rate Deposition of μc-Si:H Thin Film at Low Temperature with VHF-PECVD.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4259, doi. 10.1142/S0217979202015212
    By:
    • Yang, Huidong;
    • Wu, Chunya;
    • Mai, Yaohua;
    • Li, Hongbo;
    • Li, Yan;
    • Zhao, Ying;
    • Xue, Junming;
    • Chen, Yousu;
    • Ren, Huizhi;
    • Geng, Xinhua;
    • Xiong, Shaozhen
    Publication type:
    Article
    20
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    A Computational Design of Si-Based Direct Band-Gap Materials.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4279, doi. 10.1142/S0217979202015261
    By:
    • Mei-Chun, Huang;
    • Jian-Li, Zhang;
    • Hui-Ping, Li;
    • Zizhong, Zhu
    Publication type:
    Article
    25

    Abrupt Boron Profiles by Silicon-MBE.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4285, doi. 10.1142/S0217979202015273
    By:
    • Oehme, M.;
    • Kasper, E.
    Publication type:
    Article
    26

    Study on Electrical Transport Mechanism of Doped nc-Si:H Film.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4289, doi. 10.1142/S0217979202015285
    By:
    • Wang, Tianmin;
    • Wei, Wensheng;
    • Xu, Gangyi;
    • Zhang, Chunxi
    Publication type:
    Article
    27
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    Electrophoretic Assembly of Porous Silicon.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4306, doi. 10.1142/S0217979202015315
    By:
    • Li, Huaixiang;
    • Xue, Chengshan;
    • Zhang, Hua;
    • Guo, Chenghua;
    • Li, Chuanbo;
    • Chen, Lusheng;
    • Diao, Zhaoyu
    Publication type:
    Article
    30

    An Ultraviolet Photodetector Based on GaN/Si.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4310, doi. 10.1142/S0217979202015327
    By:
    • Ye, Zhizhen;
    • Gu, Xing;
    • Huang, Jingyun;
    • Wang, Yu;
    • Shao, Qinghui;
    • Zhao, Binghui
    Publication type:
    Article
    31
    32

    ICP Etching and Structure Study of PECVD SiC Films.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4318, doi. 10.1142/S0217979202015340
    By:
    • Shi, J.;
    • Choi, W. K.;
    • Chor, E. F.
    Publication type:
    Article
    33

    Nickel Silicidation on Polycrystalline Silicon Germanium Films.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4323, doi. 10.1142/S0217979202015352
    By:
    • Choi, W. K.;
    • Pey, K. L.;
    • Zhao, H. B.;
    • Osipowicz, T.;
    • Shen, Z. X.
    Publication type:
    Article
    34

    Study on Optical Band Gap of Boron-Doped nc-Si:H Film.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4327, doi. 10.1142/S0217979202015364
    By:
    • Wei, Wensheng;
    • Wang, Tianmin;
    • Zhang, Chunxi;
    • Li, Guohua;
    • Han, Hexiang;
    • Ding, Kun
    Publication type:
    Article
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    Self-Assembled Ge-Dots for Si Solar Cells.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4347, doi. 10.1142/S0217979202015418
    By:
    • Presting, H.;
    • Konle, J.;
    • Kibbel, H.
    Publication type:
    Article
    40
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    Characterization of Semiconductor Quantum Dots.

    Published in:
    International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4363, doi. 10.1142/S0217979202015443
    By:
    • Wang, J. N.;
    • Yang, C. L.;
    • Wang, S. H.;
    • Guo, L.;
    • Yang, S. H.;
    • Sou, I. K.;
    • Ge, W. K.
    Publication type:
    Article
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