RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS.

WU, CHANG-CHERNG; TAI, KUOCHOU; HUANG, KAI-FENG; CHANG, CHUN-YEN

Reliable gain-guided vertical cavity surface emitting lasers were fabricated by the proton implantation technique at the 0.85 and 0.98 μm emission wavelengths. The device failure mode was found to be mainly the gradual degradation mode, manifested in the gradual reduction of output power and gradual increase of diode series resistance. Continuous wave operation of the 0.85 μm quantum well lasers for 12,000 hours was seen at 25 and 50°C at 15 mA (~ 4 Ith). Extrapolation from accelerated aging test performed at higher temperatures yields a 25°C mean-time-to-failure of 1−2.5×105 hours at 15 mA. For the 0.98 μm strained quantum well lasers, a much slower degradation rate at high temperatures was seen in the 0.85 μm lasers. Secondary ion mass spectrometry revealed that the implant proton depth is short enough that the active region of these lasers is free from proton bombardment. The near field emission pattern of the aged lasers by cathodo-luminescence and electro-luminescence microscopies did not contain dark spots and line features.

International Journal of High Speed Electronics & Systems, 1994, Vol 5, Issue 4, p731

0129-1564

Academic Journal

10.1142/S0129156494000279