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Title

Evaluating intrinsic deformations in oxygen-containing precipitates.

Authors

Goldstein, R. V.; Ustinov, K. B.; Shushpannikov, P. S.; Mezhennyi, M. V.; Mil'vidskiĭ, M. G.; Reznik, V. Ya.

Abstract

A new method is proposed for evaluation of the intrinsic deformations of precipitates in silicon based on an analysis of the precipitate-dislocation arrays that appear at the late stages of multistep thermal treatment of silicon wafers. The estimate can be used for determining the fraction of a matrix substance present in the precipitate.

Subjects

DEFORMATIONS (Mechanics); OXYGEN; SILICON; NONMETALS; PHYSICS

Publication

Technical Physics Letters, 2008, Vol 34, Issue 2, p106

ISSN

1063-7850

Publication type

Academic Journal

DOI

10.1134/S1063785008020065

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