Works matching DE "SEMICONDUCTOR-metal boundaries"

Results: 127

Chemical Doping Effects on CVD‐Grown Multilayer MoSe2 Transistor.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700639

By:

Yoo, Hocheon;
Hong, Seongin;
Moon, Hyunseong;
On, Sungmin;
Ahn, Hyungju;
Lee, Han‐Koo;
Kim, Sunkook;
Hong, Young Ki;
Kim, Jae‐Joon

Publication type:

Article

Electrical properties of metal-semiconductor multilayers with amorphous structure.

Published in:

Technical Physics Letters, 2006, v. 32, n. 3, p. 262, doi. 10.1134/S1063785006030266

By:

Kalinin, Yu. E.;
Korolev, K. G.;
Sitnikov, A. V.

Publication type:

Article

Non-Alloy Cr/Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p–i–n Diodes.

Published in:

Technical Physics Letters, 2005, v. 31, n. 7, p. 581, doi. 10.1134/1.2001060

By:

Aleksandrov, S. E.;
Volkov, V. V.;
Ivanova, V. P.;
Kuz'michev, Yu. S.;
Solov'ev, Yu. V.

Publication type:

Article

Peculiarities in the Mechanism of Current Flow through an Ohmic Contact to Gallium Phosphide.

Published in:

Technical Physics Letters, 2004, v. 30, n. 10, p. 806, doi. 10.1134/1.1813716

By:

Blank, T. V.;
Goldberg, Yu. A.;
Konstantinov, O. V.;
Nikitin, V. G.;
Posse, E. A.

Publication type:

Article

Effect of the Metal–Semiconductor Phase Transition on the Capacitance of an Aluminum–Dielectric–Vanadium Dioxide Heterostructure.

Published in:

Technical Physics Letters, 2001, v. 27, n. 11, p. 924, doi. 10.1134/1.1424394

By:

Bugaev, A. A.;
Nikitin, S. E.;
Terukov, E. I.

Publication type:

Article

Periodic Breakdown of a Gas Layer in the Metal–Gaseous Dielectric–Insulating Semiconductor–Metal Structure under Stationary Illumination Conditions.

Published in:

Technical Physics Letters, 2000, v. 26, n. 2, p. 122, doi. 10.1134/1.1262762

By:

Bondarev, A. D.;
Kasherininov, P. G.;
Lodygin, A. N.;
Martynov, S. S.;
Khrunov, V. S.

Publication type:

Article

Optical amplification in a planar multichannel Mach–Zehnder interferometer based on metal–semiconductor–metal structures.

Published in:

Technical Physics Letters, 1998, v. 24, n. 1, p. 49, doi. 10.1134/1.1261989

By:

Ushakov, N. M.;
Kravtsov, K. Yu.

Publication type:

Article

Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.

Published in:

Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020

By:

GUO Yu;
ZHU Guo-fu

Publication type:

Article

A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.

Published in:

Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161

By:

Matamoros-Ambrocio, Mayra;
Ruiz-Peralta, María De Lourdes;
Chigo-Anota, Ernesto;
García-Serrano, Jesús;
Pérez-Centeno, Armando;
Sánchez-Cantú, Manuel;
Rubio-Rosas, Efraín;
Escobedo-Morales, Alejandro

Publication type:

Article

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 197, doi. 10.1007/s00340-010-4144-1

By:

Galmed, A.;
Kassem, A.;
Bergmann, H.;
Harith, M.

Publication type:

Article

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209

By:

Giannazzo, F.;
Fisichella, G.;
Piazza, A.;
Di Franco, S.;
Greco, G.;
Agnello, S.;
Roccaforte, F.

Publication type:

Article

Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range.

Published in:

Radiophysics & Quantum Electronics, 2004, v. 47, n. 9, p. 688, doi. 10.1007/s11141-005-0006-9

By:

Boshkov, V. G.;
Ziatzev, S. E.

Publication type:

Article

Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.

Published in:

Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y

By:

Wang, Minhuan;
Bian, Jiming;
Sun, Hongjun;
Liu, Hongzhu;
Li, Xiaoxuan;
Luo, Yingmin;
Huang, Huolin;
Zhang, Yuzhi

Publication type:

Article

Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures.

Published in:

Russian Physics Journal, 2012, v. 55, n. 2, p. 180, doi. 10.1007/s11182-012-9792-7

By:

Mirsagatov, Sh.;
Achilov, А.;
Zaveryukhin, B.;
Baiev, М.

Publication type:

Article

Nonlinear Effects in MSM Structures Based on AgSSe.

Published in:

Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8

By:

Gadzhieva, G.;
Akhmedov, I.;
Abdul-zade, N.

Publication type:

Article

Construction of Mo/Mo2C@C modified ZnIn2S4 Schottky junctions for efficient photo-thermal assisted hydrogen evolution.

Published in:

Materials Reports: Energy, 2023, v. 3, n. 4, p. 1, doi. 10.1016/j.matre.2023.100234

By:

Xiu-Qing Qiao;
Wenxuan Chen;
Chen Li;
Zizhao Wang;
Dongfang Hou;
Bojing Sun;
Dong-Sheng Li

Publication type:

Article

Metal-Semiconductor Schottky Barrier Junctions and their Applications (Book Review).

Published in:

1985

By:

Williams, R.H.

Publication type:

Book Review

Electrical Characterization of Pd-Doped CMAS-TiO2 Glass-Ceramics.

Published in:

International Journal of Applied Glass Science, 2014, v. 5, n. 3, p. 217, doi. 10.1111/ijag.12086

By:

Davis, Mark J.;
Vullo, Paula;
Reich, Maria‐Louisa

Publication type:

Article

Photoemission Microscopy Investigation of Buried p–n GaAs Homojunctions and Al/n-GaAs Schottky Barriers.

Published in:

Surface Review & Letters, 2002, v. 9, n. 1, p. 249, doi. 10.1142/S0218625X02002154

By:

Barbo, F.;
Bertolo, M.;
Bianco, A.;
Cautero, G.;
Fontana, S.;
Johal, T. K.;
La Rosa, S.;
Purandare, R. C.;
Svetchnikov, N.;
Franciosi, A.;
Orani, D.;
Piccin, M.;
Rubini, S.;
Cimino, R.

Publication type:

Article

Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices.

Published in:

Surface Review & Letters, 2000, v. 7, n. 5/6, p. 583, doi. 10.1142/S0218625X0000066X

By:

Hasegawa, Hideki

Publication type:

Article

A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.

Published in:

Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487

By:

Hicks, J.;
Tejeda, A.;
Taleb-Ibrahimi, A.;
Nevius, M. S.;
Wang, F.;
Shepperd, K.;
Palmer, J.;
Bertran, F.;
Le Fèvre, P.;
Kunc, J.;
de Heer, W. A.;
Berger, C.;
Conrad, E. H.

Publication type:

Article

Investigation of the Schottky barriers in aluminum — vitreous semiconductor contacts.

Published in:

Russian Physics Journal, 2005, v. 48, n. 10, p. 1080, doi. 10.1007/s11182-006-0028-6

By:

Kornev, K. P.;
Korneva, I. P.;
Sinyavskii, N. Ya.

Publication type:

Article

A model of the intimate metal-semiconductor Schottky-barrier contact.

Published in:

Russian Physics Journal, 2005, v. 48, n. 10, p. 1085, doi. 10.1007/s11182-006-0029-5

By:

Bozhkov, V. G.;
Zaitsev, S. E.

Publication type:

Article

On the Current-Voltage Characteristic of an Ideal Metal-Semiconductor Schottky-Barrier Contact.

Published in:

Russian Physics Journal, 2005, v. 48, n. 3, p. 312, doi. 10.1007/s11182-005-0125-y

By:

Bozhkov, V.;
Zaitsev, S.

Publication type:

Article

Measurement of the Metal-Semiconductor Contact Resistance and Control of the Specific Resistance of Semiconductor Films.

Published in:

Russian Physics Journal, 2003, v. 46, n. 7, p. 726, doi. 10.1023/B:RUPJ.0000008205.28283.7d

By:

Filippov, V. V.;
Frolov, P. V.;
Polyakov, N. N.

Publication type:

Article

Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765

By:

Li Lu;
Changzhi Li

Publication type:

Article

CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.

Published in:

Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007

By:

Hyodo, Takeo;
Morinaga, Naoki;
Shimizu, Yasuhiro

Publication type:

Article

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278

By:

Sun, Yunju;
Eastman, Lester F.

Publication type:

Article

OHMIC CONTACTS TO SIC.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 781, doi. 10.1142/S0129156405003429

By:

ROCCAFORTE, FABRIZIO;
LA VIA, FRANCESCO;
RAINERI, VITO

Publication type:

Article

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X

By:

Zhu, Lin;
Losee, Peter;
Chow, T. Paul

Publication type:

Article

Fabrication of Nickel Contacts for Mg2Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1754, doi. 10.1007/s11664-018-06889-7

By:

Mitra, Kunal;
Mahapatra, S.;
Dasgupta, T.

Publication type:

Article

Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5099, doi. 10.1007/s11664-018-6414-3

By:

Das, H.;
Sunkari, S.;
Naas, H.

Publication type:

Article

Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6563, doi. 10.1007/s11664-017-5696-1

By:

Bouzid, F.;
Dehimi, L.;
Pezzimenti, F.

Publication type:

Article

Ohmic Contact of Au/Mo on HgCdTe.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y

By:

Liu, Dan;
Lin, Chun;
Zhou, Songmin;
Hu, Xiaoning

Publication type:

Article

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D.;
Chai, F.;
Odekirk, B.

Publication type:

Article

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1

By:

Catalfamo, Frank;
Yen, Tingfang;
Yun, Juhyung;
Anderson, Wayne

Publication type:

Article

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3

By:

Voss, L. F.;
Stafford, L.;
Khanna, R.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Kravchenko, I. I.

Publication type:

Article

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2

By:

Chang, H. C.;
Lee, C. S.;
Chen, S. H.;
Chang, E. Y.;
He, J. Z.

Publication type:

Article

Conversion of environmental heat to electric energy in the metal-dielectric-semiconductor-metal system.

Published in:

Technical Physics, 2013, v. 58, n. 11, p. 1619, doi. 10.1134/S1063784213110170

By:

Lunin, L. S.;
Karapet’yan, G. Ya.;
Dneprovskii, V. G.;
Kataev, V. F.

Publication type:

Article

Mechanism of current flow in alloyed ohmic In/GaAs contacts.

Published in:

Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235

By:

Blank, T.;
Gol’dberg, Yu.;
Konstantinov, O.;
Nikitin, V.;
Posse, E.

Publication type:

Article

Hysteresis Loop Construction for the Metal–Semiconductor Phase Transition in Vanadium Dioxide Films.

Published in:

Technical Physics, 2002, v. 47, n. 9, p. 1134, doi. 10.1134/1.1508078

By:

Klimov, V. A.;
Timofeeva, I. O.;
Khanin, S. D.;
Shadrin, E. B.;
Ilinskiı, A. V.;
Silva-Andrade, F.

Publication type:

Article

Nonequilibrium Semiconductor–Metal Phase Transition Due to Self-Heating.

Published in:

Technical Physics, 2002, v. 47, n. 7, p. 932, doi. 10.1134/1.1495063

By:

Melkikh, A. V.;
Povzner, A. A.

Publication type:

Article

Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.

Published in:

Technical Physics, 2001, v. 46, n. 9, p. 1128, doi. 10.1134/1.1404165

By:

Gol’dberg, Yu. A.;
Posse, E. A.

Publication type:

Article

Semiconductor–metal phase transition under a strain induced by a spherical indenter.

Published in:

Technical Physics, 1998, v. 43, n. 3, p. 314, doi. 10.1134/1.1258916

By:

Kaminskiı, V. V.;
Lanyi, S.

Publication type:

Article

The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode.

Published in:

Acta Physica Polonica: A, 2015, v. 128, n. 2B, p. B-170, doi. 10.12693/APhysPolA.128.B-170

By:

KIRSOY, A.;
AHMETOGLU, M.;
ASIMOV, A.;
KUCUR, B.

Publication type:

Article

A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.

Published in:

Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706

By:

Jian Guo;
Jie Xu;
Cheng Qian

Publication type:

Article

THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES.

Published in:

Modern Physics Letters B, 2008, v. 22, n. 26, p. 2529, doi. 10.1142/S0217984908017060

By:

CHANTIS, ATHANASIOS N.;
BELASHCHENKO, KIRILL D.;
TSYMBAL, EVGENY Y.;
SUS, INNA V.

Publication type:

Article

HIGH SENSITIVE HYDROGEN SENSOR BY Pd/OXIDE/InGaP MOS STRUCTURE.

Published in:

Modern Physics Letters B, 2006, v. 20, n. 28, p. 1781, doi. 10.1142/S0217984906011888

By:

YARN, KAO-FENG

Publication type:

Article

STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY.

Published in:

Modern Physics Letters B, 2006, v. 20, n. 28, p. 1825, doi. 10.1142/S0217984906012110

By:

HUANG, SHIHUA;
WU, FENGMIN

Publication type:

Article

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2309, doi. 10.1142/S0217979208039496

By:

ERTURK, K.;
HACIISMAILOGLU, M. C.;
BEKTORE, Y.;
AHMETOGLU, M.

Publication type:

Article