Works matching AU Okhrimenko, O. B.
Results: 35
Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.
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- Semiconductors, 2020, v. 54, n. 3, p. 330, doi. 10.1134/S1063782620030033
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- Article
Formation of titanium oxide films on the surface of porous silicon carbide.
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- Technical Physics, 2008, v. 53, n. 9, p. 1232, doi. 10.1134/S1063784208090168
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- Article
Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures.
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- Technical Physics, 2003, v. 48, n. 5, p. 598, doi. 10.1134/1.1576474
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Redistribution of radiative recombination centers in the SiC/por-SiC/Dy<sub>2</sub>O<sub>3</sub> structure under the influence of athermal microwave irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 3, p. 274, doi. 10.15407/spqeo27.03.274
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Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub>, Er<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub> thin films on SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 260, doi. 10.15407/spqeo26.03.260
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Formation of ZnO films on SiC/porous Si/Si substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 140, doi. 10.15407/spqeo26.02.140
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Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er<sub>2</sub>O<sub>3</sub> structures under nonthermal action of microwave radiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355
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Principles of creating the devices that are able to control the current flow in the second class conductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 137, doi. 10.15407/spqeo25.02.137
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The model of potential barrier appearing in a hydrolayer localized in a two-layer porous nanostructure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 288, doi. 10.15407/spqeo24.03.288
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Preparation of quaternary compounds Cu<sub>2</sub>ZnSnS<sub>4</sub> by using the self-propagating high-temperature synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 272, doi. 10.15407/spqeo24.03.272
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Comparative characteristics of TiO<sub>2</sub>(Er<sub>2</sub>O<sub>3</sub>, Dy<sub>2</sub>O<sub>3</sub>)/por-SiC/SiC heterostructures (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 253, doi. 10.15407/spqeo23.03.253
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Influence of microwave radiation on relaxation processes in silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175
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Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 391, doi. 10.15407/spqeo22.04.391
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Effect of the doping method on luminescent properties of ZnS:Ag.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 361, doi. 10.15407/spqeo22.03.361
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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 360, doi. 10.15407/spqeo21.04.360
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Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200
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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465
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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
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Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
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- Publication type:
- Article
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 303, doi. 10.15407/spqeo19.03.303
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Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor-oxide film.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 452, doi. 10.15407/spqeo18.04.452
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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 309, doi. 10.15407/spqeo18.03.309
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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 226, doi. 10.15407/spqeo18.02.226
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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 227
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Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 200
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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 239
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Interface features of SiO<sub>2</sub>/SiC heterostructures according to methods for producing the SiO<sub>2</sub> thin films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 13
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Modification of properties of the glass--Si<sub>3</sub>N<sub>4</sub>-Si-SiO<sub>2</sub> structure at laser treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 284
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Spectroscopy of (Si<sub>2</sub>)<sub>1-x</sub>(ZnS)<sub>x</sub> solid solutions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 3, p. 16
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Reduction in absorption in quartz/Si, quartz/Si/SiO<sub>2</sub>, and SiC/Si/SiO<sub>2</sub> structures on laser treatment.
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- Semiconductors, 2010, v. 44, n. 3, p. 309, doi. 10.1134/S1063782610030061
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- Article
Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment.
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- Semiconductors, 2008, v. 42, n. 7, p. 868, doi. 10.1134/S1063782608070191
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- Article
The Transition Layer in TiB[sub 2]–GaAs and Au–TiB[sub 2]–GaAs Schottky Contacts.
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- Semiconductors, 2001, v. 35, n. 4, p. 427, doi. 10.1134/1.1365188
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Morphology and optical properties of titanium-doped porous silicon carbide layers.
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- Technical Physics Letters, 2006, v. 32, n. 2, p. 140, doi. 10.1134/S1063785006020167
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- Article