Works matching DE "INDIUM selenide"

Results: 117

Modification of the optoelectronic properties of reactively evaporated In6Se7 thin films by Sn doping for photovoltaic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19499, doi. 10.1007/s10854-018-0080-3

By:

Anuroop, R.;
Pradeep, B.

Publication type:

Article

Effect of composition on steady state and transient photoconductivity in isocoordinated InSbSe (0 ≤ x ≤ 25) chalcogenide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14202, doi. 10.1007/s10854-017-7277-8

By:

Sharma, Shaveta;
Sharma, Rita;
Kumar, Praveen;
Thangaraj, R.;
Asokan, K.;
Mian, M.

Publication type:

Article

Erratum to: Crystallization of amorphous InSe matrix in PbTe-InSe multilayer nanocomposite structure.

Published in:

2017

By:

Parvathi, M.;
Arivazhagan, V.;
Mohan, A.;
Rajesh, S.

Publication type:

Erratum

Indium selenide microrod films: chemical bath deposition from acidic bath.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12351, doi. 10.1007/s10854-016-5145-6

By:

Bansode, Sanjay;
Kapadnis, Ramesh;
Ansari, Abu;
Wagh, Vasant;
Kulkarni, Anil;
Kale, Sampat;
Pathan, Habib

Publication type:

Article

Properties of spray deposited nanocrystalline indium selenide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 5416, doi. 10.1007/s10854-015-3095-z

By:

Yadav, Abhijit;
Salunke, S.

Publication type:

Article

InS nanostructures: semi-batch synthesis and characterization and its photovoltaic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4265, doi. 10.1007/s10854-015-2977-4

By:

Zeynali, Hossein;
Alvarzandi, Sepideh;
Hosseinpour-Mashkani, S.

Publication type:

Article

Preparation of indium selenide thin film by electrochemical technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 9, p. 3977, doi. 10.1007/s10854-014-2116-7

By:

Madugu, M.;
Bowen, L.;
Echendu, O.;
Dharmadasa, I.

Publication type:

Article

Charge transport and mechanisms of electron scattering in (HgSe)(InSe) crystals doped with 3 d transition metals.

Published in:

Inorganic Materials, 2014, v. 50, n. 5, p. 447, doi. 10.1134/S0020168514050070

By:

Koziarskyi, I.;
Maistruk, E.;
Koziarskyi, D.;
Maryanchuk, P.

Publication type:

Article

Electric-field effect on the electrical conductivity of InSe and InSe〈Dy〉 crystals.

Published in:

Inorganic Materials, 2013, v. 49, n. 12, p. 1180, doi. 10.1134/S0020168513120017

By:

Abdinov, A.;
Babaeva, R.;
Gasanov, Ya.;
Ragimova, N.;
Rzaev, R.

Publication type:

Article

Preparation and properties of the (TlInSe)Se solid solution.

Published in:

Inorganic Materials, 2013, v. 49, n. 1, p. 28, doi. 10.1134/S0020168513010081

By:

Nadjafov, A.;
Alekperov, O.;
Guseinov, G.;
Abdullaev, A.

Publication type:

Article

Electrical and optical properties of Al-intercalated InSe and GaSe.

Published in:

Inorganic Materials, 2013, v. 49, n. 1, p. 22, doi. 10.1134/S0020168513010019

By:

Boledzyuk, V.;
Kovalyuk, Z.;
Pyrlya, M.;
Barbutsa, S.

Publication type:

Article

Electric field effect on photoconductivity decay in n-InSe single crystals.

Published in:

Inorganic Materials, 2012, v. 48, n. 8, p. 781, doi. 10.1134/S0020168512080018

By:

Abdinov, A.;
Babaeva, R.;
Rzaev, R.

Publication type:

Article

Preparation and properties of electrets based on iodine-intercalated InSe and GaSe.

Published in:

Inorganic Materials, 2012, v. 48, n. 8, p. 776, doi. 10.1134/S0020168512080092

By:

Kovalyuk, Z.;
Duplavyy, V.

Publication type:

Article

Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00549-1

By:

Altvater, Michael A.;
Stevens, Christopher E.;
Pike, Nicholas A.;
Hendrickson, Joshua R.;
Rao, Rahul;
Krylyuk, Sergiy;
Davydov, Albert V.;
Jariwala, Deep;
Pachter, Ruth;
Snure, Michael;
Glavin, Nicholas R.

Publication type:

Article

Reconfigurable InSe Electronics with van der Waals Integration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176

By:

Hu, Siqi;
Luo, Xiaoguang;
Xu, Jinpeng;
Zhao, Qinghua;
Cheng, Yingchun;
Wang, Tao;
Jie, Wanqi;
Castellanos‐Gomez, Andres;
Gan, Xuetao;
Zhao, Jianlin

Publication type:

Article

High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100954

By:

Liang, Guangda;
Wang, Yiming;
Zhang, Jiawei;
Kudrynskyi, Zakhar R.;
Kovalyuk, Zakhar;
Patanè, Amalia;
Xin, Qian;
Song, Aimin

Publication type:

Article

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100999

By:

Mazumder, Aishani;
Ahmed, Taimur;
Mayes, Edwin;
Tawfik, Sherif Abdulkader;
Russo, Salvy P.;
Low, Mei Xian;
Ranjan, Abhishek;
Balendhran, Sivacarendran;
Walia, Sumeet

Publication type:

Article

Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306

By:

Yang, Jeong Yong;
Yeom, Min Jae;
Park, Youngseo;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Controllable Band Alignment Transition in InSe–MoS2 Van der Waals Heterostructure (Phys. Status Solidi RRL 7/2018).

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 7, p. 1, doi. 10.1002/pssr.201870323

By:

Chen, Xi;
Lin, Zheng‐Zhe;
Ju, Ming

Publication type:

Article

Controllable Band Alignment Transition in InSe–MoS2 Van der Waals Heterostructure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 7, p. 1, doi. 10.1002/pssr.201800102

By:

Chen, Xi;
Lin, Zheng‐Zhe;
Ju, Ming

Publication type:

Article

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 6/7, p. -1, doi. 10.1142/S0217984915400242

By:

Wagh, B. G.;
Bhalerao, Anuradha B.;
Bulakhe, R. N.;
Lokhande, C. D.

Publication type:

Article

Phase‐Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High‐Efficiency Second Harmonic Generation.

Published in:

Chemistry - A European Journal, 2018, v. 24, n. 58, p. 15678, doi. 10.1002/chem.201803634

By:

Huang, Wenjuan;
Gan, Lin;
Li, Huiqiao;
Ma, Ying;
Zhai, Tianyou

Publication type:

Article

Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 12, p. 1, doi. 10.1007/s11082-023-05314-6

By:

Qasrawi, A. F.;
Aboalrub, Fatima M.

Publication type:

Article

Role of layer thickness and field-effect mobility on photoresponsivity of indium selenide (InSe)-based phototransistors.

Published in:

Oxford Open Materials Science, 2021, v. 1, n. 1, p. 1, doi. 10.1093/oxfmat/itab010

By:

Wasala, Milinda;
Patil, Prasanna;
Ghosh, Sujoy;
Weber, Lincoln;
Sidong Lei;
Talapatra, Saikat

Publication type:

Article

Optical nonlinearities in GaSe and InSe crystals upon laser excitation.

Published in:

Optics & Spectroscopy, 2014, v. 116, n. 4, p. 595, doi. 10.1134/S0030400X1404016X

By:

Kyazym-zade, A.;
Salmanov, V.;
Guseinov, A.;
Gasanova, L.;
Mamedov, R.

Publication type:

Article

Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review.

Published in:

Indian Journal of Pure & Applied Physics, 2024, v. 62, n. 6, p. 517, doi. 10.56042/ijpap.v62i6.8788

By:

Mishra, Monu;
Dhakla, Shweta;
Deendyal, Parvesh K;
Kumar, Manish;
Kashyap, Manish K

Publication type:

Article

On a neutron detector based on TlInSe crystals intercalated with a lithium isotope.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 740, doi. 10.1134/S1063782617060021

By:

Alekseev, I.;
Goremychkin, E.;
Gundorin, N.;
Petrenko, A.;
Sashin, I.

Publication type:

Article

Optical properties of InSe thin films.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 715, doi. 10.1134/S1063782616060026

By:

Bodnar, I.

Publication type:

Article

On the specific electrophysical properties of n-InSe single crystals.

Published in:

Semiconductors, 2016, v. 50, n. 1, p. 34, doi. 10.1134/S1063782616010024

By:

Abdinov, A.;
Babaeva, R.;
Rzaev, R.;
Ragimova, N.;
Amirova, S.

Publication type:

Article

On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1307, doi. 10.1134/S1063782615100061

By:

Brudnyi, V.;
Sarkisov, S.;
Kosobutsky, A.

Publication type:

Article

Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/ p-InSe heterojunctions.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 545, doi. 10.1134/S1063782614040149

By:

Khandozhko, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 239, doi. 10.1134/S1063782614020249

By:

Sydor, O.;
Kovalyuk, Z.;
Dubinko, V.

Publication type:

Article

ХАРАКТЕРИСТИКА НАНОСТРУКТУРОВАНИХ ПЛІВОК ПРИРОДНОГО ОКСИДУ СЕЛЕНІДУ ІНДІЮ ЗА ДАНИМИ РЕНТУЕНІВСЬКОЇ ДИФРАКТОМЕТРІЇ МОДИФІКОВАНИМ МЕТОДОМ ШЕРРЕРА І МЕТОДОМ ВІЛЬЯМСОНА-ГОЛЛА.

Published in:

Journal of Physical Studies, 2022, v. 26, n. 2, p. 2801-1, doi. 10.30970/jps.26.2801

By:

Драпак, С. І.;
Гаврилюк, С. В.;
Халавка, Ю. Б.;
Фотій, В. Д.;
Фочук, П. М.;
Федів, О. І.

Publication type:

Article

Negative Capacitance Effect in Ag/α-In2Se3/CdS/CdSe/C Dual Band Stop Filters.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 244, doi. 10.1007/s11664-018-6700-0

By:

Khanfar, Hazem K.;
Qasrawi, A. F.;
Shehada, Sufyan R.

Publication type:

Article

Effects of Substrate Temperature on Structural and Optical Properties of Spray-Pyrolyzed Cu(GaIn)Se Thin Films on Polyimide Plastic Substrate.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 12, p. 6745, doi. 10.1007/s11664-017-5746-8

By:

Faraj, M.;
Pakhuruddin, M.;
Taboada, P.

Publication type:

Article

Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped InPbSe Polycrystalline.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 5, p. 3131, doi. 10.1007/s11664-016-5218-6

By:

Alsharafi, Rashed;
Zhan, Heng;
Shaheen, Nusrat;
Lu, Xu;
Wang, Guoyu;
Sun, Xiaonan;
Zhou, Xiaoyuan

Publication type:

Article

Spectral Dynamics of the n-InSe/ p-BN Heterojunction.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2686, doi. 10.1007/s11664-015-3738-0

By:

Alharbi, S.;
Qasrawi, A.

Publication type:

Article

Study of Optical and Electrical Properties of InS:Sn Films Deposited by Spray Pyrolysis.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 7, p. 2536, doi. 10.1007/s11664-015-3806-5

By:

Kraini, M.;
Bouguila, N.;
Halidou, I.;
Moadhen, A.;
Vázquez-Vázquez, C.;
López-Quintela, M.A.;
Alaya, S.

Publication type:

Article

Study of linear and non-linear optical properties of In–Se doped chalcogenide semiconducting glasses.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12062, doi. 10.1007/s10854-022-08166-0

By:

Yadav, Kavita;
Mohan, Devendra;
Sanghi, Sujata

Publication type:

Article

One-pot synthesis of phosphine-free indium selenide (InSe) QDs and their structural characterization for LPG and humidity sensing.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11802, doi. 10.1007/s10854-022-08144-6

By:

Chaudhary, Priyanka;
Singh, Ajeet;
Sikarwar, Samiksha;
Yadav, B. C.

Publication type:

Article

Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20252, doi. 10.1007/s10854-021-06528-8

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

The advancement of compelling Indium Selenide: synthesis, structural studies, optical properties and photoelectrical applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1033, doi. 10.1007/s10854-020-04878-3

By:

Patel, P. B.;
Dhimmar, J. M.;
Modi, B. P.;
Desai, H. N.

Publication type:

Article

Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals.

Published in:

Technical Physics, 2014, v. 59, n. 3, p. 407, doi. 10.1134/S1063784214030141

By:

Katerinchuk, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Sensitive elements of pressure transducers made of layered intercalated InSe, GaSe, and Bi2Te3 crystals.

Published in:

Technical Physics, 2013, v. 58, n. 12, p. 1840, doi. 10.1134/S106378421312013X

By:

Kudrynskyi, Z. R.;
Kovalyuk, Z. D.

Publication type:

Article

Van der Waals surface of InSe as a nanorelief standard in metrology of nano-objects.

Published in:

Technical Physics, 2012, v. 57, n. 8, p. 1152, doi. 10.1134/S1063784212080087

By:

Dmitriev, A.

Publication type:

Article

The study of flexible emission and photoconductivity in 2D layered InSe toward an applicable 1000-nm light emitter and absorber.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 3, p. 1, doi. 10.1007/s00339-017-0843-3

By:

Chuang, Ching-An;
Lin, Min-Han;
Yeh, Bo-Xian;
Chu, Yun-Ju;
Ho, Ching-Hwa

Publication type:

Article

Optical and electrical properties of InMnSe thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 1, p. 349, doi. 10.1007/s00339-015-9194-0

By:

Gad, S.

Publication type:

Article

Controlled crystallization of β-InS in 65GeS⋅25InS⋅10CsCl chalcohalide glass.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 112, n. 4, p. 939, doi. 10.1007/s00339-012-7452-y

By:

Li, Zhuobin;
Lin, Changgui;
Nie, Qiuhua;
Dai, Shixun

Publication type:

Article

Extrinsic Photoelectric Effects in Holmium- and Erbium-Doped n-InSe Crystals under Combined Excitation.

Published in:

Inorganic Materials, 2022, v. 58, n. 7, p. 696, doi. 10.1134/S0020168522070019

By:

Abdinov, A. Sh.;
Babaeva, R. F.

Publication type:

Article

Hydrogen implantation effects on the electrical and optical properties of InSe thin films.

Published in:

Turkish Journal of Physics, 2012, v. 36, n. 3, p. 385, doi. 10.3906/fiz-1109-10

By:

QASRAWI, Atef Fayez;
ILAIWI, Khaled Faysal;
POLIMENI, Antonio

Publication type:

Article