Works matching DE "SEMICONDUCTOR devices"
Results: 1256
An existence result for a class of electrothermal drift-diffusion models with Gauss–Fermi statistics for organic semiconductors.
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- Analysis & Applications, 2021, v. 19, n. 2, p. 275, doi. 10.1142/S0219530519500246
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On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions.
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- Chemistry - A European Journal, 2024, v. 30, n. 42, p. 1, doi. 10.1002/chem.202401403
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Atomic Insights of Self‐Healing in Silicon Nanowires.
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- Advanced Functional Materials, 2023, v. 33, n. 6, p. 1, doi. 10.1002/adfm.202210053
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Ambipolar Nonvolatile Memory Behavior and Reversible Type‐Conversion in MoSe<sub>2</sub>/MoSe<sub>2</sub> Transistors with Modified Stack Interface.
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- Advanced Functional Materials, 2022, v. 32, n. 49, p. 1, doi. 10.1002/adfm.202205567
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Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices.
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- Advanced Functional Materials, 2022, v. 32, n. 47, p. 1, doi. 10.1002/adfm.202208997
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Mechanical Modulation of 2D Electronic Devices at Atto‐Joule Energy via Flexotronic Effect.
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- Advanced Functional Materials, 2022, v. 32, n. 34, p. 1, doi. 10.1002/adfm.202202779
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Quantifying the Excitonic Static Disorder in Organic Semiconductors.
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- Advanced Functional Materials, 2022, v. 32, n. 32, p. 1, doi. 10.1002/adfm.202113181
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Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi<sub>2</sub>O<sub>2</sub>Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels.
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- Advanced Functional Materials, 2022, v. 32, n. 30, p. 1, doi. 10.1002/adfm.202203003
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Effective Mass from Seebeck Coefficient.
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- Advanced Functional Materials, 2022, v. 32, n. 20, p. 1, doi. 10.1002/adfm.202112772
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Spatiotemporally Controlled Access to Photoluminescence Dark State of 2D Monolayer Semiconductor by FRAP Microscopy.
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- Advanced Functional Materials, 2022, v. 32, n. 9, p. 1, doi. 10.1002/adfm.202107551
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Understanding Effects of Ion Diffusion on Charge Carrier Mobility of Electrolyte‐Gated Organic Transistor Using Ionic Liquid‐Embedded Poly(3‐hexylthiophene).
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- Advanced Functional Materials, 2022, v. 32, n. 2, p. 1, doi. 10.1002/adfm.202108215
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HfO<sub>2</sub>‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO<sub>2</sub>/BiFeO<sub>3</sub>/HfO<sub>2</sub> Design.
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- Advanced Functional Materials, 2021, v. 31, n. 48, p. 1, doi. 10.1002/adfm.202107131
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Hybrid Devices by Selective and Conformal Deposition of PtSe<sub>2</sub> at Low Temperatures.
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- Advanced Functional Materials, 2021, v. 31, n. 46, p. 1, doi. 10.1002/adfm.202103936
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Permanent Electrochemical Doping of Quantum Dots and Semiconductor Polymers.
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- Advanced Functional Materials, 2020, v. 30, n. 49, p. 1, doi. 10.1002/adfm.202004789
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Multiphoton Absorption Stimulated Metal Chalcogenide Quantum Dot Solar Cells under Ambient and Concentrated Irradiance.
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- Advanced Functional Materials, 2020, v. 30, n. 39, p. 1, doi. 10.1002/adfm.202004563
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Direct Patterning of Metal Chalcogenide Semiconductor Materials.
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- Advanced Functional Materials, 2020, v. 30, n. 27, p. 1, doi. 10.1002/adfm.202002685
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Core Fluorination Enhances Solubility and Ambient Stability of an IDT‐Based n‐Type Semiconductor in Transistor Devices.
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- Advanced Functional Materials, 2020, v. 30, n. 17, p. 1, doi. 10.1002/adfm.202000325
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Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects.
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- Advanced Functional Materials, 2020, v. 30, n. 10, p. 1, doi. 10.1002/adfm.201907357
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An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity.
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- Advanced Functional Materials, 2019, v. 29, n. 46, p. N.PAG, doi. 10.1002/adfm.201905340
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Defect Modulation Doping.
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- Advanced Functional Materials, 2019, v. 29, n. 14, p. N.PAG, doi. 10.1002/adfm.201807906
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Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
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- Advanced Functional Materials, 2019, v. 29, n. 14, p. N.PAG, doi. 10.1002/adfm.201807613
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Accurate Extraction of Charge Carrier Mobility in 4‐Probe Field‐Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 26, p. 1, doi. 10.1002/adfm.201707105
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Accurate Extraction of Charge Carrier Mobility in 4‐Probe Field‐Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 26, p. N.PAG, doi. 10.1002/adfm.201707105
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- Article
Long-range crystal alignment with polymer additive for organic thin film transistors.
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- Journal of Polymer Research, 2019, v. 26, n. 7, p. N.PAG, doi. 10.1007/s10965-019-1842-1
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Applied physics: A low-power light amplifier.
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- Nature, 2015, v. 525, n. 7567, p. 8, doi. 10.1038/525008b
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- Article
A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs.
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- Instruments (2410-390X), 2024, v. 8, n. 1, p. 19, doi. 10.3390/instruments8010019
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- Article
Mechanism Analysis of Bubble Discharge Within Silicone Gels Under Pulsed Electric Field.
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- Gels (2310-2861), 2024, v. 10, n. 12, p. 799, doi. 10.3390/gels10120799
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新能源车电机驱动系统的 EMI 协同分析.
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- Electronic Science & Technology, 2023, v. 36, n. 10, p. 24, doi. 10.16180/j.cnki.issn1007-7820.2023.10.004
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- Article
ESTUDIO COMPARATIVO DE LA ASIGNATURA "DISPOSITIVOS SEMICONDUCTORES" APLICADA A PROGRAMAS DE POSGRADO EN MÉXICO.
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- Revista Foco (Interdisciplinary Studies Journal), 2024, v. 17, n. 6, p. 1, doi. 10.54751/revistafoco.v17n6-082
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耐等离子体刻蚀涂层材料与制备工艺研究进展.
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- Nonferrous Metals Engineering, 2024, v. 14, n. 12, p. 39, doi. 10.3969/j.issn.20951744.2024.12.005
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Model predictive control of grid-connected PV power generation system considering optimal MPPT control of PV modules.
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- Protection & Control of Modern Power Systems, 2021, v. 6, n. 1, p. 1, doi. 10.1186/s41601-021-00210-1
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- Article
A comprehensive review of DC fault protection methods in HVDC transmission systems.
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- Protection & Control of Modern Power Systems, 2021, v. 6, n. 1, p. 1, doi. 10.1186/s41601-020-00173-9
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Comparative study of semiconductor power losses between CSI-based STATCOM and VSI-based STATCOM, both used for unbalance compensation.
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- Protection & Control of Modern Power Systems, 2020, v. 5, n. 1, p. 1, doi. 10.1186/s41601-019-0150-4
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Design and Validation of a Bidirectional DC-DC Converter Control for Electric Vehicles Using FPGA-in-the-Loop Methodology.
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- Journal Européen des Systèmes Automatisés, 2024, v. 57, n. 1, p. 77, doi. 10.18280/jesa.570108
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铁路信号电源系统中直流电源模块优化设计.
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- Railway Signalling & Communication Engineering, 2022, v. 19, n. 11, p. 115, doi. 10.3969/j.issn.1673-4440.2022.11.023
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Front Cover: Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications (ChemPhotoChem 1/2020).
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- ChemPhotoChem, 2020, v. 4, n. 1, p. 1, doi. 10.1002/cptc.201900288
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- Article
An identity between the m-spotty weight enumerators of a linear code and its dual.
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- Turkish Journal of Mathematics, 2012, v. 36, n. 4, p. 641, doi. 10.3906/mat-1103-55
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- Article
Exploring Inorganic Flexible Electronics: III‐Nitride Light‐Emitting Diode Epilayers on Wafer‐Scale Exfoliable Mica Substrate.
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- Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400256
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- Article
Growth and Photoresponse of WS<sub>2</sub>/MoSe<sub>2</sub> Lateral Heterostructure.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300842
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- Article
Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In<sub>2</sub>Se<sub>3</sub> via 2D Solid‐Phase Crystallization.
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- Advanced Electronic Materials, 2024, v. 10, n. 7, p. 1, doi. 10.1002/aelm.202300880
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- Article
Universal Synaptic Plasticity of Interface‐Based Second‐Order Memristors.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300803
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Unveiling the Impact of the Electrolyte's Counter Ions on Organic Electrochemical Transistor Performance.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300766
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- Article
Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300722
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High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density.
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- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300624
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Abnormal Photocurrent in Semiconductor p‐n Heterojunctions: Toward Multifunctional Photoelectrochemical‐Type Photonic Devices and Beyond.
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- Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300274
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Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300045
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Uncovering the Different Components of Contact Resistance to Atomically Thin Semiconductors.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201342
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Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193
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- Article
Efficient Ohmic Contact in Monolayer CrX<sub>2</sub>N<sub>4</sub> (X = C, Si) Based Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056
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- Article
Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238
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- Article