Normally off GaN Transistor for a Complementary Pair.
- Published in:
- Semiconductors, 2024, v. 58, n. 13, p. 1132, doi. 10.1134/S1063782624700179
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- Article
Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 13
Results: 15
1
2
On the Temperature Characteristics of Noise Diodes.
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- Semiconductors, 2024, v. 58, n. 13, p. 1128, doi. 10.1134/S1063782624700167
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- Article
3
Calculation of the Efficiency of a Photodiode with Generation and Recombination in the Space-Charge Region.
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- Semiconductors, 2024, v. 58, n. 13, p. 1120, doi. 10.1134/S1063782624700155
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- Article
4
Effect of Electron Injection and Temperature on the Gas Sensitivity of Diamond-Graphite Film Structures to Water Vapor.
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- Semiconductors, 2024, v. 58, n. 13, p. 1084, doi. 10.1134/S106378262470009X
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- Article
5
On the Laser Formation of Suspended Graphene Channels of Photodetectors.
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- Semiconductors, 2024, v. 58, n. 13, p. 1109, doi. 10.1134/S1063782624700131
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- Article
6
On the Formation of TiO<sub>2</sub>–ZnO Composite Layers with Increased Photosensitivity by Electrophoretic Deposition.
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- Semiconductors, 2024, v. 58, n. 13, p. 1104, doi. 10.1134/S106378262470012X
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- Article
7
Comparison of Silicon and Silicon-Dioxide Sputtering by a Focused Ion Beam.
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- Semiconductors, 2024, v. 58, n. 13, p. 1097, doi. 10.1134/S1063782624700118
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- Article
8
Transmission Electron Microscopy Study of the Structure of GaAs Layers in GaAs/Ge/GaAs Heterostructures.
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- Semiconductors, 2024, v. 58, n. 13, p. 1089, doi. 10.1134/S1063782624700106
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- Article
9
Influence of Pulse Power on the Parameters of Film Absorbing Elements.
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- Semiconductors, 2024, v. 58, n. 13, p. 1114, doi. 10.1134/S1063782624700143
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- Article
10
Peculiarities of the Impact of a Helium Ion Beam on an Intercalated Graphite Film.
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- Semiconductors, 2024, v. 58, n. 13, p. 1077, doi. 10.1134/S1063782624700088
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- Article
11
On the Crystallization of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films Using a Thin-Film Resistive-Heating Element for Creating Optoelectronic and Integrated-Optical Elements and Devices on Their Basis.
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- Semiconductors, 2024, v. 58, n. 13, p. 1070, doi. 10.1134/S1063782624700076
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- Article
12
Study of the Concentration and Mobility of Carriers in Nanostructured PbTe- and GeTe-Based Thermoelectric Materials.
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- Semiconductors, 2024, v. 58, n. 13, p. 1064, doi. 10.1134/S1063782624700064
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- Article
13
On the Creation of Molybdenum-Oxide-Based Layers for Semiconductor Gas Sensors.
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- Semiconductors, 2024, v. 58, n. 13, p. 1060, doi. 10.1134/S1063782624700052
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- Article
14
Electronic Structure of Bismuth Ferromanganite BiFe<sub>0.5</sub>Mn<sub>0.5</sub>O<sub>3</sub>.
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- Semiconductors, 2024, v. 58, n. 13, p. 1054, doi. 10.1134/S1063782624700040
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- Publication type:
- Article
15
Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy.
- Published in:
- Semiconductors, 2024, v. 58, n. 13, p. 1049, doi. 10.1134/S1063782624700039
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- Publication type:
- Article