Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 6
Results: 5
On the Effect of Etching with a Focused Ga<sup>+</sup> Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al<sub>0.18</sub>Ga<sub>0.82</sub>As/GaAs/Al<sub>0.18</sub>Ga<sub>0.82</sub>As Heterostructure.
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- Semiconductors, 2023, v. 57, n. 6, p. 316, doi. 10.1134/S1063782623080171
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- Article
Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra.
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- Semiconductors, 2023, v. 57, n. 6, p. 310, doi. 10.1134/S1063782623080146
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- Article
Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype.
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- Semiconductors, 2023, v. 57, n. 6, p. 305, doi. 10.1134/S1063782623080109
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- Article
Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume.
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- Semiconductors, 2023, v. 57, n. 6, p. 300, doi. 10.1134/S1063782623080067
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- Article
Gallium Vacancy—Shallows Donor Complexes in n-GaAs Doped with Elements of Group VI Te or S (Review).
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- Semiconductors, 2023, v. 57, n. 6, p. 275, doi. 10.1134/S1063782623080055
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- Article