Connecting you to content on EBSCOhost

Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 6

Results: 5

1

On the Effect of Etching with a Focused Ga<sup>+</sup> Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al<sub>0.18</sub>Ga<sub>0.82</sub>As/GaAs/Al<sub>0.18</sub>Ga<sub>0.82</sub>As Heterostructure.

Published in:

Semiconductors, 2023, v. 57, n. 6, p. 316, doi. 10.1134/S1063782623080171

By:

Voznyuk, G. V.;
Grigorenko, I. N.;
Lila, A. S.;
Mitrofanov, M. I.;
Nikolaev, D. N.;
Evtikhiev, V. P.

Publication type:

Article

2

Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra.

Published in:

Semiconductors, 2023, v. 57, n. 6, p. 310, doi. 10.1134/S1063782623080146

By:

Payusov, A. S.;
Beckman, A. A.;
Kornyshov, G. O.;
Shernyakov, Yu. M.;
Maximov, M. V.;
Gordeev, N. Yu.

Publication type:

Article

3

Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume.

Published in:

Semiconductors, 2023, v. 57, n. 6, p. 300, doi. 10.1134/S1063782623080067

By:

Karlina, L. B.;
Vlasov, A. S.;
Smirnova, I. P.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Tokarev, M. V.;
Soshnikov, I. P.

Publication type:

Article

4

Gallium Vacancy—Shallows Donor Complexes in n-GaAs Doped with Elements of Group VI Te or S (Review).

Published in:

Semiconductors, 2023, v. 57, n. 6, p. 275, doi. 10.1134/S1063782623080055

By:

Gutkin, A. A.;
Averkiev, N. S.

Publication type:

Article

5

Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype.

Published in:

Semiconductors, 2023, v. 57, n. 6, p. 305, doi. 10.1134/S1063782623080109

By:

Mynbaeva, M. G.;
Amelchuk, D. G.;
Smirnov, A. N.;
Nikitina, I. P.;
Lebedev, S. P.;
Davydov, V. Yu.;
Lebedev, A. A.

Publication type:

Article