Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 12

Results: 8

Spontaneous Emission in Leaky Modes of Nanowires.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 570, doi. 10.1134/S1063782623080122

By:

Nikolaev, V. V.;
Girshova, E. I.;
Kaliteevski, M. A.

Publication type:

Article

Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review).

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 554, doi. 10.1134/S1063782623090130

By:

Mikhailova, M. P.;
Dmitriev, A. P.;
Andreev, I. A.;
Ivanov, E. V.;
Kunitsyna, E. V.;
Yakovlev, Yu. P.

Publication type:

Article

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 550, doi. 10.1134/S1063782623090105

By:

Lazarenko, A. A.;
Shubina, K. Yu.;
Nikitina, E. V.;
Pirogov, E. V.;
Mizerov, A. M.;
Sobolev, M. S.

Publication type:

Article

Optical Properties of Cu2O Nanowhiskers.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 543, doi. 10.1134/S1063782623080080

By:

Labzovskaya, M. E.;
Novikov, B. V.;
Serov, A. Yu.;
Mikushev, S. V.;
Davydov, V. Yu.;
Smirnov, A. N.;
Talalaev, V. G.

Publication type:

Article

Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 539, doi. 10.1134/S1063782623080079

By:

Kornyshov, G. O.;
Gordeev, N. Yu.;
Shernyakov, Yu. M.;
Beckman, A. A.;
Payusov, A. S.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.

Publication type:

Article

Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 531, doi. 10.1134/S1063782623080043

By:

Eremin, V. K.;
Fadeeva, N. N.;
Mitina, D. D.;
Verbitskaya, E. M.

Publication type:

Article

Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 524, doi. 10.1134/S1063782623080031

By:

Eliseev, I. A.;
Gushchina, E. A.;
Klotchenko, S. A.;
Lebedev, A. A.;
Lebedeva, N. M.;
Lebedev, S. P.;
Nashchekin, A. V.;
Petrov, V. N.;
Puzyk, M. V.;
Roenkov, A. D.;
Smirnov, A. N.;
Tanklevskaya, E. M.;
Usikov, A. S.;
Shabunina, E. I.;
Schmidt, N. M.

Publication type:

Article

Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films.

Published in:

Semiconductors, 2023, v. 57, n. 12, p. 519, doi. 10.1134/S1063782623090026

By:

Andryushchenko, D. A.;
Ruzhevich, M. S.;
Smirnov, A. M.;
Bazhenov, N. L.;
Mynbaev, K. D.;
Remesnik, V. G.

Publication type:

Article

Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 12

Spontaneous Emission in Leaky Modes of Nanowires.

Monopolarity of Hot Charge Carrier Multiplication in A<sup>III</sup>B<sup>V</sup> Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review).

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs.

Optical Properties of Cu<sub>2</sub>O Nanowhiskers.

Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots.

Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions.

Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors.

Optical and Structural Properties of Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te Epitaxial Films.