Investigation of the Interface Layer Phase Composition Obtained by Hot Pressing of Cr and Si.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 373, doi. 10.1134/S106378262309018X
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 8
Results: 6
1
2
Current Generation in Pd/InP Structures in Hydrogen Medium.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 369, doi. 10.1134/S1063782623090166
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- Publication type:
- Article
3
Theoretical Investigation of the Phonon Spectrum and the Lattice Thermal Conductivity in GeTe.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 364, doi. 10.1134/S1063782623090154
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- Publication type:
- Article
4
Investigation of Methods for Texturing Light-Emitting Diodes Based on AlGaAs/GaAs Heterostructures.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 359, doi. 10.1134/S1063782623090117
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- Publication type:
- Article
5
Influence of Low Temperature on the Electrophysical and Noise Characteristics of UV LEDs Based on InGaN/GaN Quantum Well Structures.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 354, doi. 10.1134/S1063782623070096
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- Publication type:
- Article
6
Terahertz Emission from Silicon Carbide Nanostructures.
- Published in:
- Semiconductors, 2023, v. 57, n. 8, p. 347, doi. 10.1134/S106378262309004X
- By:
- Publication type:
- Article