Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 13

Results: 9

Model for Speed Performance of Quantum-Dot Waveguide Photodiode.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 632, doi. 10.1134/S1063782623050184

By:

Zhukov, A. E.;
Kryzhanovskaya, N. V.;
Makhov, I. S.;
Moiseev, E. I.;
Nadtochiy, A. M.;
Fominykh, N. A.;
Mintairov, S. A.;
Kalyuzhyy, N. A.;
Zubov, F. I.;
Maximov, M. V.

Publication type:

Article

On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb).

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 621, doi. 10.1134/S1063782623030193

By:

Zakgeim, A. L.;
Karandashev, S. A.;
Klimov, A. A.;
Kunkov, R. E.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyi, M. A.;
Usikova, A. A.;
Chernyakov, A. E.

Publication type:

Article

Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 615, doi. 10.1134/S1063782623050160

By:

Snigirev, L. A.;
Ushanov, V. I.;
Ivanov, A. A.;
Bert, N. A.;
Kirilenko, D. A.;
Yagovkina, M. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. P.;
Kasatkin, I. A.;
Chaldyshev, V. V.

Publication type:

Article

InGaAsP/InP Photovoltaic Converters for Narrowband Radiation.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 611, doi. 10.1134/S1063782623090142

By:

Potapovich, N. S.;
Nakhimovich, M. V.;
Khvostikov, V. P.

Publication type:

Article

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120

By:

Maximov, M. V.;
Shernyakov, Yu. M.;
Kornyshov, G. O.;
Simchuk, O. I.;
Gordeev, N. Yu.;
Beckman, A. A.;
Payusov, A. S.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Kulagina, M. M.;
Zhukov, A. E.

Publication type:

Article

Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 599, doi. 10.1134/S1063782623020112

By:

Litvyak, V. M.;
Cherbunin, R. V.;
Soldatenkov, F. Yu.;
Kalevich, V. K.;
Kavokin, K. V.

Publication type:

Article

Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093

By:

Kryzhanovskaya, N. V.;
Blokhin, S. A.;
Makhov, I. S.;
Moiseev, E. I.;
Nadtochiy, A. M.;
Fominykh, N. A.;
Mintairov, S. A.;
Kaluyzhnyy, N. A.;
Guseva, Yu. A.;
Kulagina, M. M.;
Zubov, F. I.;
Kolodeznyi, E. S.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 587, doi. 10.1134/S1063782623040061

By:

Ermina, A. A.;
Solodovchenko, N. S.;
Prigoda, K. V.;
Levitskii, V. S.;
Pavlov, S. I.;
Zharova, Yu. A.

Publication type:

Article

High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 579, doi. 10.1134/S1063782623030028

By:

Almaev, D. A.;
Almaev, A. V.;
Nikolaev, V. I.;
Butenko, P. N.;
Scheglov, M. P.;
Chikiryaka, A. V.;
Pechnikov, A. I.

Publication type:

Article