Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 9
Results: 10
Effect of Thermal History on the Properties of Efficient Thermoelectric Alloys Ge<sub>0</sub>.<sub>86</sub>Pb<sub>0</sub>.<sub>1</sub>Bi<sub>0</sub>.<sub>04</sub>Te.
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- Semiconductors, 2023, v. 57, n. 9, p. 410, doi. 10.1134/S106378262302015X
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- Article
Peculiarities of Magnetic Oscillations in HgSe Monocrystal with Co Impurities of Low Concentration (<1 at %).
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- Semiconductors, 2023, v. 57, n. 9, p. 423, doi. 10.1134/S1063782623050172
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Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition.
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- Semiconductors, 2023, v. 57, n. 9, p. 415, doi. 10.1134/S1063782623040176
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Growth of GaAs<sub>1–x</sub>Bi<sub>x</sub> Layers by Molecular-Beam Epitaxy.
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- Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155
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High-Temperature Diffusion of the Acceptor Impurity Be in AlN.
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- Semiconductors, 2023, v. 57, n. 9, p. 401, doi. 10.1134/S106378262306009X
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Strip Thermoelectric Generator Made of Carbon Fiber.
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- Semiconductors, 2023, v. 57, n. 9, p. 398, doi. 10.1134/S1063782623020082
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Influence of the Oxygen during the Deposition of an Indium Tin Oxide Thin Film by Magnetron Sputtering for Heterojunction Solar Cells.
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- Semiconductors, 2023, v. 57, n. 9, p. 393, doi. 10.1134/S1063782623050081
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- Article
Effect of Dendritic Inhomogeneity on the Thermoelectric Properties of Bi<sub>0.88</sub>Sb<sub>0.12</sub> Crystals.
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- Semiconductors, 2023, v. 57, n. 9, p. 389, doi. 10.1134/S1063782623060076
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Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 377, doi. 10.1134/S1063782623070023
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Temperature Degradation of 2.3, 3.2 and 4.1 THz Quantum Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 383, doi. 10.1134/S1063782623070059
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- Article