Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 1
Results: 10
Investigation of the Dependence of the Silicon Needle Shape on the KOH Solution Concentration during Anisotropic Wet Etching.
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- Semiconductors, 2023, v. 57, n. 1, p. 52, doi. 10.1134/S1063782623010074
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Investigation of the Flat Viewing Angle of Silicon Photomultipliers.
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- Semiconductors, 2023, v. 57, n. 1, p. 87, doi. 10.1134/S1063782623010049
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Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions.
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- Semiconductors, 2023, v. 57, n. 1, p. 81, doi. 10.1134/S1063782623010050
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Vacuum Nanoelectronics Based on Semiconductor Field-Emission Structures: Current State and Development Prospects. Review.
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- Semiconductors, 2023, v. 57, n. 1, p. 65, doi. 10.1134/S1063782623010037
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Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate.
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- Semiconductors, 2023, v. 57, n. 1, p. 58, doi. 10.1134/S1063782623010086
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- Article
Electrical Transport in Porous Structures of Si-Ge/c-Si Formed by the Electrochemical Deposition of Germanium in Porous Silicon.
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- Semiconductors, 2023, v. 57, n. 1, p. 46, doi. 10.1134/S1063782623010104
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Methods for Calculating the Effective Electrophysical Properties of Inhomogeneous Media Taking into Account Various Structural Features. Review.
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- Semiconductors, 2023, v. 57, n. 1, p. 31, doi. 10.1134/S1063782623010062
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Thermal Stability of Thick Films Based on Low-Temperature Thermoelectric Materials of Bi-Te-Se and Bi-Te-Sb Systems Modified with Copper-Oxide Additives.
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- Semiconductors, 2023, v. 57, n. 1, p. 28, doi. 10.1134/S1063782623010013
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Characteristics and Areas of Possible Application of Amorphous Silicon–Carbon and Metal–Silicon–Carbon Films. Review.
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- Semiconductors, 2023, v. 57, n. 1, p. 11, doi. 10.1134/S1063782623010025
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Identification of the Structure of Nanoscale Layers of Multilayer Heterocomposites using Transmission Electron Microscopy.
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- Semiconductors, 2023, v. 57, n. 1, p. 1, doi. 10.1134/S1063782623010098
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- Article