Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 3
Results: 16
Investigation of the Relationship between Mechanical Stresses, Optical Inhomogeneity, and the Oxygen Concentration in Germanium Crystals.
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- Semiconductors, 2022, v. 56, n. 3, p. 201, doi. 10.1134/S1063782622020129
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Irradiation with Argon Ions of Cr/4H-SiC Photodetectors.
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- Semiconductors, 2022, v. 56, n. 3, p. 184, doi. 10.1134/S1063782622020087
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The Effect of Neodymium(III) Ions on the Photoluminescence of Cadmium and Zinc Sulfides in a Polyacrylate Matrix.
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- Semiconductors, 2022, v. 56, n. 3, p. 207, doi. 10.1134/S1063782622020130
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Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride.
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- Semiconductors, 2022, v. 56, n. 3, p. 230, doi. 10.1134/S1063782622020178
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Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing.
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- Semiconductors, 2022, v. 56, n. 3, p. 223, doi. 10.1134/S1063782622020166
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Comparison of Thin Films of Titanium Dioxide Deposited by Sputtering and Sol–Gel Methods for Waveguiding Applications.
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- Semiconductors, 2022, v. 56, n. 3, p. 234, doi. 10.1134/S106378262106004X
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Scanning Tunneling Microscopy in (Bi, Sb)<sub>2</sub>(Te, Se, S)<sub>3</sub> Chalcogenide Thermoelectrics.
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- Semiconductors, 2022, v. 56, n. 3, p. 195, doi. 10.1134/S1063782622020105
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Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.
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- Semiconductors, 2022, v. 56, n. 3, p. 189, doi. 10.1134/S1063782622020099
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Diffusion of Germanium from a Buried SiO<sub>2</sub> Layer and Formation of a SiGe Phase.
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- Semiconductors, 2022, v. 56, n. 3, p. 215, doi. 10.1134/S1063782622020154
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Synthesis and Thermoelectric Properties of an Sn<sub>1 – x</sub>Pb<sub>x</sub>Sb<sub>4</sub>Te<sub>8</sub> Solid Solution Doped with Bismuth.
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- Semiconductors, 2022, v. 56, n. 3, p. 180, doi. 10.1134/S1063782622020075
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The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Chalcogenide Semiconductor.
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- Semiconductors, 2022, v. 56, n. 3, p. 175, doi. 10.1134/S1063782622020063
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Atomistic Simulation of the Lattice Properties of SnSe.
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- Semiconductors, 2022, v. 56, n. 3, p. 169, doi. 10.1134/S1063782622020051
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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al<sub>2</sub>O<sub>3</sub> Substrate during Hydride Vapor Phase Epitaxy.
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- Semiconductors, 2022, v. 56, n. 3, p. 164, doi. 10.1134/S106378262202004X
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Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation.
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- Semiconductors, 2022, v. 56, n. 3, p. 153, doi. 10.1134/S1063782622020026
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Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time.
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- Semiconductors, 2022, v. 56, n. 3, p. 145, doi. 10.1134/S1063782622020014
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The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs.
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- Semiconductors, 2022, v. 56, n. 3, p. 160, doi. 10.1134/S1063782622020038
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