Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 2

Results: 15

Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 139, doi. 10.1134/S1063782622010195
By:
- Zhukov, A. E.;
- Kryzhanovskaya, N. V.;
- Moiseev, E. I.;
- Dragunova, A. S.;
- Nadtochiy, A. M.;
- Maximov, M. V.;
- Gordeev, N. Yu.
Publication type:
Article
Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 134, doi. 10.1134/S1063782622010183
By:
- Usov, O. A.;
- Lukyanova, L. N.;
- Volkov, M. P.
Publication type:
Article
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 122, doi. 10.1134/S1063782622010171
By:
- Sushkov, A. A.;
- Pavlov, D. A.;
- Andrianov, A. I.;
- Shengurov, V. G.;
- Denisov, S. A.;
- Chalkov, V. Yu.;
- Kriukov, R. N.;
- Baidus, N. V.;
- Yurasov, D. V.;
- Rykov, A. V.
Publication type:
Article
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 115, doi. 10.1134/S106378262201016X
By:
- Sokolova, Z. N.;
- Pikhtin, N. A;
- Slipchenko, S. O.;
- Asryan, L. V.
Publication type:
Article
Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 107, doi. 10.1134/S1063782622010158
By:
- Sobolev, M. M.;
- Soldatenkov, F. Yu.
Publication type:
Article
Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 101, doi. 10.1134/S1063782622010146
By:
- Smagina, Zh. V.;
- Zinovyev, V. A.;
- Stepikhova, M. V.;
- Peretokin, A. V.;
- Dyakov, S. A.;
- Rodyakina, E. E.;
- Novikov, A. V.;
- Dvurechenskii, A. V.
Publication type:
Article
Cobalt-Doped Chemically Deposited Lead-Sulfide Films.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 91, doi. 10.1134/S1063782622010122
By:
- Maskaeva, L. N.;
- Mostovshchikova, E. V.;
- Markov, V. F.;
- Voronin, V. I.;
- Pozdin, A. V.;
- Selyanin, I. O.;
- Mikhailova, A. I.
Publication type:
Article
ZnO-Based Antireflection Layers Obtained by Electron-Beam Evaporation.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 85, doi. 10.1134/S1063782622010110
By:
- Markov, L. K.;
- Pavluchenko, A. S.;
- Smirnova, I. P.
Publication type:
Article
Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 78, doi. 10.1134/S1063782622010092
By:
- Kul'bachinskii, V. A.;
- Kytin, V. G.;
- Apreleva, A. S.;
- Konstantinova, E. A.
Publication type:
Article
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 71, doi. 10.1134/S1063782622010080
By:
- Khabibullin, R. A.;
- Maremyanin, K. V.;
- Ponomarev, D. S.;
- Galiev, R. R.;
- Zaycev, A. A.;
- Danilov, A. I.;
- Vasil'evskii, I. S.;
- Vinichenko, A. N.;
- Klochkov, A. N.;
- Afonenko, A. A.;
- Ushakov, D. V.;
- Morozov, S. V.;
- Gavrilenko, V. I.
Publication type:
Article
Torque Transfer to a Conducting Particle Using the Lorentz Force.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 67, doi. 10.1134/S1063782622010079
By:
- Grachev, A. I.
Publication type:
Article
Mott and Efros–Shklovskii Variable-Range Hopping Conduction in Films Formed by Silicon Nanoparticles Doped with Phosphorus and Boron.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 58, doi. 10.1134/S1063782622010067
By:
- Dorofeev, S. G.;
- Kononov, N. N.;
- Bubenov, S. S.;
- Popelensky, V. M.;
- Vinokurov, A. A.
Publication type:
Article
Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 50, doi. 10.1134/S1063782622010055
By:
- Burmistrov, E. R.;
- Avakyants, L. P.
Publication type:
Article
Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 43, doi. 10.1134/S1063782622010043
By:
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Semakova, A. A.;
- Zegrya, G. G.
Publication type:
Article
On the Photoconductivity of p-GaSe〈REE〉 Layered Semiconductors and a Multiband Photoreceiver of Light on Their Basis.
Published in:
Semiconductors, 2022, v. 56, n. 2, p. 39, doi. 10.1134/S1063782622010018
By:
- Abdinov, A. Sh.;
- Babayeva, R. F.
Publication type:
Article