Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 13
Results: 11
Study of the Sensitivity of Porous SnO<sub>2</sub>-Based Thick-Film Elements to the Hydrogen Concentration in Air.
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- Semiconductors, 2021, v. 55, n. 13, p. 1063, doi. 10.1134/S1063782621130030
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- Article
Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics.
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- Semiconductors, 2021, v. 55, n. 13, p. 1055, doi. 10.1134/S1063782621130029
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- Article
Investigation of the Dynamic Range of Silicon Photomultiplier Tubes.
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- Semiconductors, 2021, v. 55, n. 13, p. 1049, doi. 10.1134/S1063782621130121
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- Article
Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO<sub>2</sub> in MOS Transistors.
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- Semiconductors, 2021, v. 55, n. 13, p. 1045, doi. 10.1134/S1063782621130054
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- Article
Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures.
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- Semiconductors, 2021, v. 55, n. 13, p. 1039, doi. 10.1134/S1063782621130042
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- Article
Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Layers Grown on Si(111) Substrates.
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- Semiconductors, 2021, v. 55, n. 13, p. 1033, doi. 10.1134/S106378262113011X
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- Article
Prediction of Conditions for Chloride–Hydride Epitaxy of Ga<sub>1 – y</sub>In<sub>y</sub>As<sub>1 – x</sub>P<sub>x</sub> Layers Isoperiodic with GaAs and GaAs<sub>1 – x</sub>P<sub>x</sub>.
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- Semiconductors, 2021, v. 55, n. 13, p. 1029, doi. 10.1134/S1063782621130091
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- Article
Effect of Fullerene Encapsulation on Optical and Thermoelectrical Properties of Carbon Nanotubes.
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- Semiconductors, 2021, v. 55, n. 13, p. 1024, doi. 10.1134/S106378262113008X
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- Article
Prediction of the Effective Permittivity of Foam Polymer Materials.
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- Semiconductors, 2021, v. 55, n. 13, p. 1021, doi. 10.1134/S1063782621130078
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- Article
Spin Valves in Microelectronics (A Review).
- Published in:
- 2021
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- Publication type:
- Literature Review
Method for Predicting the Effective Conductivity of Textured Polycrystals Taking Intergranular Gaps into Consideration.
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- Semiconductors, 2021, v. 55, n. 13, p. 1003, doi. 10.1134/S1063782621130066
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- Article