Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 9

Results: 10

Surface Potential Modeling of DG SOI MoS2 FET (MFET) and Gate Misalignment Effect Analysis Therein.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 717, doi. 10.1134/S1063782621090037

By:

Dwivedi, A. K.;
Baliyan, T.;
Tripathi, S.

Publication type:

Article

Quantum Transport in a Semiconductor Nanolayer Taking into Account the Surface Scattering of Carriers.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 755, doi. 10.1134/S1063782621090116

By:

Kuznetsova, I. A.;
Savenko, O. V.;
Romanov, D. N.

Publication type:

Article

Method for Forming Films of the β-FeSi2 Phase by Pulsed Laser Deposition in Vacuum.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 749, doi. 10.1134/S1063782621090104

By:

Kuznetsov, Yu. M.;
Dorokhin, M. V.;
Nezhdanov, A. V.;
Zdoroveyshchev, D. A.;
Lesnikov, V. P.;
Mashin, A. I.

Publication type:

Article

Dependence of the Lasing Spectrum and Self-Mode Locking on the Photonic Band Gap in Class-C Heterolasers with Distributed Feedback of Waves in a Fabry—Perot Cavity.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 741, doi. 10.1134/S1063782621090098

By:

Kocharovskaya, E. R.;
Kukushkin, V. A.;
Mishin, A. V.;
Kocharovsky, Vl. V.;
Kocharovsky, V. V.

Publication type:

Article

Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 731, doi. 10.1134/S1063782621090050

By:

Filatov, D. O.;
Shenina, M. E.;
Rozhentsov, I. A.;
Koryazhkina, M. N.;
Novikov, A. S.;
Antonov, I. N.;
Ershov, A. V.;
Gorshkov, A. P.;
Gorshkov, O. N.

Publication type:

Article

Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 726, doi. 10.1134/S1063782621090049

By:

Evdokimov, A. E.;
Kuznetsova, M. S.;
Mikhailov, A. V.;
Kavokin, K. V.;
Dzhioev, R. I.

Publication type:

Article

Electronic States and Persistent Currents in Rings with Inhomogeneous Rashba Spin–Orbit Coupling.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 764, doi. 10.1134/S106378262109013X

By:

Maksimova, G. M.;
Zainagutdinov, A. R.;
Telezhnikov, A. V.

Publication type:

Article

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 735, doi. 10.1134/S1063782621090062

By:

Gaponenko, N. V.;
Karnilava, Yu. D.;
Lashkovskaya, E. I.;
Zhivulko, V. D.;
Mudryi, A. V.;
Radyush, Yu. V.;
Andreev, B. A.;
Stepikhova, M. V.;
Yablonskiy, A. N.;
Gusev, S. A.;
Subasri, R.;
Reddy, D. S.

Publication type:

Article

Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 705, doi. 10.1134/S1063782621080200

By:

Verkholetov, M. G.;
Prudaev, I. A.

Publication type:

Article

Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 710, doi. 10.1134/S1063782621080212

By:

Vinnichenko, M. Ya.;
Makhov, I. S.;
Kharin, N. Yu.;
Graf, S. V.;
Panevin, V. Yu.;
Sedova, I. V.;
Sorokin, S. V.;
Firsov, D. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 9

Surface Potential Modeling of DG SOI MoS<sub>2</sub> FET (MFET) and Gate Misalignment Effect Analysis Therein.

Quantum Transport in a Semiconductor Nanolayer Taking into Account the Surface Scattering of Carriers.

Method for Forming Films of the β-FeSi<sub>2</sub> Phase by Pulsed Laser Deposition in Vacuum.

Dependence of the Lasing Spectrum and Self-Mode Locking on the Photonic Band Gap in Class-C Heterolasers with Distributed Feedback of Waves in a Fabry—Perot Cavity.

Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO<sub>2</sub>(Y) Films with Au Nanoparticles.

Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures.

Electronic States and Persistent Currents in Rings with Inhomogeneous Rashba Spin–Orbit Coupling.

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.

Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers.

Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.