Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 8

Results: 10

Structural Characterization of Pb<sub>0.7</sub>Sn<sub>0.3</sub>Te Crystalline Topological Insulator Thin Films Grown on Si(111).

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 682, doi. 10.1134/S106378262108011X

By:

Kaveev, A. K.;
Bondarenko, D. N.;
Tereshchenko, O. E.

Publication type:

Article

Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and "Back" Reflector.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 686, doi. 10.1134/S1063782621080121

By:

Malevskaya, A. V.;
Kalyuzhnyy, N. A.;
Malevskii, D. A.;
Mintairov, S. A.;
Nadtochiy, A. M.;
Nakhimovich, M. V.;
Soldatenkov, F. Y.;
Shvarts, M. Z.;
Andreev, V. M.

Publication type:

Article

Doping of Carbon Layers Grown by the Pulsed Laser Technique.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 660, doi. 10.1134/S1063782621080054

By:

Danilov, Yu. A.;
Alaferdov, A. V.;
Vikhrova, O.V.;
Zdoroveyshchev, D. A.;
Kovalskiy, V. A.;
Kriukov, R. N.;
Kuznetsov, Yu. M.;
Lesnikov, V. P.;
Nezhdanov, A. V.;
Drozdov, M. N.

Publication type:

Article

Effect of Complexing Agents on Structural, Morphological, and Optical Properties of Chemically Deposited ZnO Thin Films.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 691, doi. 10.1134/S1063782621080157

By:

Raidou, A.

Publication type:

Article

Optical and Electronic Properties of Passivated InP(001) Surfaces.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 667, doi. 10.1134/S1063782621080066

By:

Dementev, P. A.;
Dementeva, E. V.;
Lvova, T. V.;
Berkovits, V. L.;
Lebedev, M. V.

Publication type:

Article

Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 696, doi. 10.1134/S1063782621080182

By:

Talla, J. A.;
Almahmoud, E. A.;
Abu-Farsakh, H.

Publication type:

Article

Increasing the Power and Radiation Coherence of Wide-Aperture Heterolasers by Optimizing the Width of the Bragg Grating.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 672, doi. 10.1134/S106378262108008X

By:

Ginzburg, N. S.;
Sergeev, A. S.;
Kocharovskaya, E. R.;
Malkin, A. M.;
Zaslavsky, V. Yu.

Publication type:

Article

Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 678, doi. 10.1134/S1063782621080108

By:

Ilkiv, I. V.;
Kotlyar, K. P.;
Kirilenko, D. A.;
Osipov, A. V.;
Soshnikov, I. P.;
Terpitsky, A. N.;
Cirlin, G. E.

Publication type:

Article

Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 654, doi. 10.1134/S1063782621070204

By:

Yakimov, A. I.;
Kirienko, V. V.;
Bloshkin, A. A.;
Dvurechenskii, A. V.;
Utkin, D. E.

Publication type:

Article

Structural and Electronic Properties of Rippled Graphene with Different Orientations of Stone-Wales Defects: First-Principles Study.

Published in:

Semiconductors, 2021, v. 55, n. 8, p. 643, doi. 10.1134/S1063782621070198

By:

Talla, J. A.;
Almahmoud, E. A.;
Al-Khaza'leh, K.;
Abu-Farsakh, H.

Publication type:

Article