Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 8
Results: 10
Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and "Back" Reflector.
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- Semiconductors, 2021, v. 55, n. 8, p. 686, doi. 10.1134/S1063782621080121
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Effect of Complexing Agents on Structural, Morphological, and Optical Properties of Chemically Deposited ZnO Thin Films.
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- Semiconductors, 2021, v. 55, n. 8, p. 691, doi. 10.1134/S1063782621080157
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Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory.
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- Semiconductors, 2021, v. 55, n. 8, p. 696, doi. 10.1134/S1063782621080182
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Increasing the Power and Radiation Coherence of Wide-Aperture Heterolasers by Optimizing the Width of the Bragg Grating.
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- Semiconductors, 2021, v. 55, n. 8, p. 672, doi. 10.1134/S106378262108008X
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Optical and Electronic Properties of Passivated InP(001) Surfaces.
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- Semiconductors, 2021, v. 55, n. 8, p. 667, doi. 10.1134/S1063782621080066
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Doping of Carbon Layers Grown by the Pulsed Laser Technique.
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- Semiconductors, 2021, v. 55, n. 8, p. 660, doi. 10.1134/S1063782621080054
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- Article
Structural Characterization of Pb<sub>0.7</sub>Sn<sub>0.3</sub>Te Crystalline Topological Insulator Thin Films Grown on Si(111).
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- Semiconductors, 2021, v. 55, n. 8, p. 682, doi. 10.1134/S106378262108011X
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- Article
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.
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- Semiconductors, 2021, v. 55, n. 8, p. 678, doi. 10.1134/S1063782621080108
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Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays.
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- Semiconductors, 2021, v. 55, n. 8, p. 654, doi. 10.1134/S1063782621070204
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Structural and Electronic Properties of Rippled Graphene with Different Orientations of Stone-Wales Defects: First-Principles Study.
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- Semiconductors, 2021, v. 55, n. 8, p. 643, doi. 10.1134/S1063782621070198
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