Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 7

Results: 10

Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 601, doi. 10.1134/S1063782621070083

By:

Kunitsyna, E. V.;
Pivovarova, A. A.;
Andreev, I. A.;
Konovalov, G. G.;
Ivanov, E. V.;
Il'inskaya, N. D.;
Yakovlev, Yu. P.

Publication type:

Article

Surface Emitting Quantum-Cascade Ring Laser.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 591, doi. 10.1134/S106378262107006X

By:

Babichev, A. V.;
Kolodeznyi, E. S.;
Gladyshev, A. G.;
Denisov, D. V.;
Voznyuk, G. V.;
Mitrofanov, M. I.;
Kharin, N. Yu.;
Panevin, V. Yu.;
Slipchenko, S. O.;
Lyutetskii, A. V.;
Evtikhiev, V. P.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Pikhtin, N. A.;
Egorov, A. Yu.

Publication type:

Article

Band Structure and Processes in the Electronic System of (Bi2 –xSbx)Te3 (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 637, doi. 10.1134/S1063782621070186

By:

Stepanov, N. P.;
Kalashnikov, A. A.;
Uryupin, O. N.

Publication type:

Article

Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 608, doi. 10.1134/S1063782621070095

By:

Lin, Y.-C.;
Niu, J.-S.;
Liu, W.-C.;
Tsai, J.-H.

Publication type:

Article

C60 Fullerene Molecules under Single-Layer Graphene on a Metal Substrate.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 621, doi. 10.1134/S1063782621070149

By:

Rekhviashvili, S. Sh.;
Bukhurova, M. M.

Publication type:

Article

Model of a "Two-Dimensional Metal–Graphene-Like Compound" Junction: Consideration for Interaction between the Components.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 595, doi. 10.1134/S1063782621070071

By:

Davydov, S. Yu.;
Posrednik, O. V.

Publication type:

Article

Structural and Optical Properties of MgO Thin Films Prepared by Dip-Coating Process: Effect of Thickness.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 583, doi. 10.1134/S1063782621070058

By:

Aouati, R.;
Djaaboube, H.;
Bouabelloul, A.;
Taabouche, A.;
Bouachiba, Y.;
Daranfad, W.;
Oudina, A.;
Kharfi, F.

Publication type:

Article

Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 617, doi. 10.1134/S1063782621070113

By:

Mynbaeva, M. G.;
Smirnov, A. N.;
Mynbaev, K. D.

Publication type:

Article

Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 633, doi. 10.1134/S1063782621070174

By:

Sobolev, N. A.;
Kalyadin, A. E.;
Feklisova, O. V.;
Yakimov, E. B.

Publication type:

Article

Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 625, doi. 10.1134/S1063782621070150

By:

Rodrigues, C. G.

Publication type:

Article

Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 7

Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm.

Surface Emitting Quantum-Cascade Ring Laser.

Band Structure and Processes in the Electronic System of (Bi<sub>2 –</sub><sub>x</sub>Sb<sub>x</sub>)Te<sub>3</sub> (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range.

Thermal Stability of HfO<sub>2</sub>|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals.

C<sub>60</sub> Fullerene Molecules under Single-Layer Graphene on a Metal Substrate.

Model of a "Two-Dimensional Metal–Graphene-Like Compound" Junction: Consideration for Interaction between the Components.

Structural and Optical Properties of MgO Thin Films Prepared by Dip-Coating Process: Effect of Thickness.

Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure.

Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon.

Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.